Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing

Research output: Contribution to conferencePoster

Abstract

Interactions at interfaces in thin films and multilayers play an important role for present day nano-scaled devices. For example, reducing thermally induced interdiffusion between Mo and Si layers is a key challenge in developing Mo/Si multilayers as reflective coatings for projection lithography and free electron lasers. The introduction of thin B4C barrier layers, intended to reduce thermal damage, results in complex behavior under thermal loads. Using in-situ grazing incidence X-ray reflection measurements during sequential annealing, we resolve picometer changes in the multilayer structure, and link these changes to interactions of Mo and Si with the B4C layers, combined with molybdenum silicide formation with reduced formation rates.
Original languageEnglish
Pages-
Publication statusPublished - 17 Jan 2012
EventPhysics@FOM Veldhoven 2012: Tertiary Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing - NH Koningshof Veldhoven, Veldhoven, Netherlands
Duration: 17 Jan 201218 Jan 2012

Conference

ConferencePhysics@FOM Veldhoven 2012
CountryNetherlands
CityVeldhoven
Period17/01/1218/01/12

Keywords

  • METIS-298894

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    Nyabero, S. L., van de Kruijs, R. W. E., Yakshin, A., & Bijkerk, F. (2012). Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing. -. Poster session presented at Physics@FOM Veldhoven 2012, Veldhoven, Netherlands.