Chemical modeling of a high-density inductively-coupled plasma reactor containing silane

Alexeij Y. Kovalgin, A. Boogaard, I. Brunets, J. Holleman, Jurriaan Schmitz

    Research output: Contribution to journalArticleAcademicpeer-review

    12 Citations (Scopus)

    Abstract

    We carried out the modeling of chemical reactions in a silane-containing remote Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPECVD) system, intended for deposition of silicon, silicon oxide, and silicon nitride layers. The required electron densities and Electron Energy Distribution Functions (EEDF) were taken from our earlier Langmuir-probe measurements. The EEDF exhibited a fraction (0.5%) of fast electrons in the energy range between 20 and 40 eV, strongly deviating from Maxwell–Boltzmann (MB) distribution. We considered 16 electron impact dissociation/ionization reactions and 26 secondary reactions for homogeneous propagation of plasma species. We noticed a significant difference (orders of magnitude) between the concentrations of the species obtained using experimental EEDFs and MB energy distributions, pointing to the importance of the fast electron tail. For silicon oxide films, a qualitative agreement between the radical densities in plasma at different total pressures and the deposition rate was observed.
    Original languageUndefined
    Article number10.1016/j.surfcoat.2007.04.086
    Pages (from-to)8849-8853
    Number of pages5
    JournalSurface and coatings technology
    Volume201
    Issue numberWP07-01
    DOIs
    Publication statusPublished - Sep 2007

    Keywords

    • EWI-9724
    • IR-64007
    • METIS-241605
    • SC-ICF: Integrated Circuit Fabrication

    Cite this

    @article{b90700056f814ef3961bc3c1cf51664d,
    title = "Chemical modeling of a high-density inductively-coupled plasma reactor containing silane",
    abstract = "We carried out the modeling of chemical reactions in a silane-containing remote Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPECVD) system, intended for deposition of silicon, silicon oxide, and silicon nitride layers. The required electron densities and Electron Energy Distribution Functions (EEDF) were taken from our earlier Langmuir-probe measurements. The EEDF exhibited a fraction (0.5{\%}) of fast electrons in the energy range between 20 and 40 eV, strongly deviating from Maxwell–Boltzmann (MB) distribution. We considered 16 electron impact dissociation/ionization reactions and 26 secondary reactions for homogeneous propagation of plasma species. We noticed a significant difference (orders of magnitude) between the concentrations of the species obtained using experimental EEDFs and MB energy distributions, pointing to the importance of the fast electron tail. For silicon oxide films, a qualitative agreement between the radical densities in plasma at different total pressures and the deposition rate was observed.",
    keywords = "EWI-9724, IR-64007, METIS-241605, SC-ICF: Integrated Circuit Fabrication",
    author = "Kovalgin, {Alexeij Y.} and A. Boogaard and I. Brunets and J. Holleman and Jurriaan Schmitz",
    note = "Euro CVD 16, 16th European Conference on Chemical Vapor Deposition",
    year = "2007",
    month = "9",
    doi = "10.1016/j.surfcoat.2007.04.086",
    language = "Undefined",
    volume = "201",
    pages = "8849--8853",
    journal = "Surface and coatings technology",
    issn = "0257-8972",
    publisher = "Elsevier",
    number = "WP07-01",

    }

    Chemical modeling of a high-density inductively-coupled plasma reactor containing silane. / Kovalgin, Alexeij Y.; Boogaard, A.; Brunets, I.; Holleman, J.; Schmitz, Jurriaan.

    In: Surface and coatings technology, Vol. 201, No. WP07-01, 10.1016/j.surfcoat.2007.04.086, 09.2007, p. 8849-8853.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Chemical modeling of a high-density inductively-coupled plasma reactor containing silane

    AU - Kovalgin, Alexeij Y.

    AU - Boogaard, A.

    AU - Brunets, I.

    AU - Holleman, J.

    AU - Schmitz, Jurriaan

    N1 - Euro CVD 16, 16th European Conference on Chemical Vapor Deposition

    PY - 2007/9

    Y1 - 2007/9

    N2 - We carried out the modeling of chemical reactions in a silane-containing remote Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPECVD) system, intended for deposition of silicon, silicon oxide, and silicon nitride layers. The required electron densities and Electron Energy Distribution Functions (EEDF) were taken from our earlier Langmuir-probe measurements. The EEDF exhibited a fraction (0.5%) of fast electrons in the energy range between 20 and 40 eV, strongly deviating from Maxwell–Boltzmann (MB) distribution. We considered 16 electron impact dissociation/ionization reactions and 26 secondary reactions for homogeneous propagation of plasma species. We noticed a significant difference (orders of magnitude) between the concentrations of the species obtained using experimental EEDFs and MB energy distributions, pointing to the importance of the fast electron tail. For silicon oxide films, a qualitative agreement between the radical densities in plasma at different total pressures and the deposition rate was observed.

    AB - We carried out the modeling of chemical reactions in a silane-containing remote Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPECVD) system, intended for deposition of silicon, silicon oxide, and silicon nitride layers. The required electron densities and Electron Energy Distribution Functions (EEDF) were taken from our earlier Langmuir-probe measurements. The EEDF exhibited a fraction (0.5%) of fast electrons in the energy range between 20 and 40 eV, strongly deviating from Maxwell–Boltzmann (MB) distribution. We considered 16 electron impact dissociation/ionization reactions and 26 secondary reactions for homogeneous propagation of plasma species. We noticed a significant difference (orders of magnitude) between the concentrations of the species obtained using experimental EEDFs and MB energy distributions, pointing to the importance of the fast electron tail. For silicon oxide films, a qualitative agreement between the radical densities in plasma at different total pressures and the deposition rate was observed.

    KW - EWI-9724

    KW - IR-64007

    KW - METIS-241605

    KW - SC-ICF: Integrated Circuit Fabrication

    U2 - 10.1016/j.surfcoat.2007.04.086

    DO - 10.1016/j.surfcoat.2007.04.086

    M3 - Article

    VL - 201

    SP - 8849

    EP - 8853

    JO - Surface and coatings technology

    JF - Surface and coatings technology

    SN - 0257-8972

    IS - WP07-01

    M1 - 10.1016/j.surfcoat.2007.04.086

    ER -