Chemical titration of clean silicon surfaces with N2O and O2: Atomic nature of "5x1" reconstructed Si(110)

Enrico G. Keim, Herbert Wormeester, Arend van Silfhout

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Abstract

Using spectroscopic differential reflectometry (SDR), Auger electron spectroscopy (AES), and low-energy electron diffraction (LEED) we have studied the room temperature adsorption behavior of N2O and O2 at the clean low-Miller index Si surfaces
Original languageUndefined
Pages (from-to)2747-2754
JournalJournal of vacuum science & technology A: vacuum, surfaces, and films
Volume8
Issue number3
DOIs
Publication statusPublished - 1990

Keywords

  • METIS-128483
  • IR-23684

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