Chemical titration of clean silicon surfaces with N2O and O2: Atomic nature of "5x1" reconstructed Si(110)

Enrico G. Keim; Herbert Wormeester; Arend van Silfhout

doi:10.1116/1.576661

Chemical titration of clean silicon surfaces with N2O and O2: Atomic nature of "5x1" reconstructed Si(110)

Enrico G. Keim, Herbert Wormeester, Arend van Silfhout

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Abstract

Using spectroscopic differential reflectometry (SDR), Auger electron spectroscopy (AES), and low-energy electron diffraction (LEED) we have studied the room temperature adsorption behavior of N2O and O2 at the clean low-Miller index Si surfaces

Original language	Undefined
Pages (from-to)	2747-2754
Journal	Journal of vacuum science and technology A: vacuum, surfaces, and films
Volume	8
Issue number	3
DOIs	https://doi.org/10.1116/1.576661
Publication status	Published - 1990

Keywords

METIS-128483
IR-23684

Access to Document

10.1116/1.576661

chemical_titration
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Cite this

Keim, E. G., Wormeester, H., & van Silfhout, A. (1990). Chemical titration of clean silicon surfaces with N2O and O2: Atomic nature of "5x1" reconstructed Si(110). Journal of vacuum science and technology A: vacuum, surfaces, and films, 8(3), 2747-2754. https://doi.org/10.1116/1.576661

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DO - 10.1116/1.576661

M3 - Article

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JO - Journal of vacuum science and technology A: vacuum, surfaces, and films

JF - Journal of vacuum science and technology A: vacuum, surfaces, and films

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