Chemical titration of clean silicon surfaces with N2O and O2: Atomic nature of "5x1" reconstructed Si(110)

Enrico G. Keim; Herbert Wormeester; Arend van Silfhout

doi:10.1116/1.576661

Chemical titration of clean silicon surfaces with N2O and O2: Atomic nature of "5x1" reconstructed Si(110)

Enrico G. Keim, Herbert Wormeester, Arend van Silfhout

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Using spectroscopic differential reflectometry (SDR), Auger electron spectroscopy (AES), and low-energy electron diffraction (LEED) we have studied the room temperature adsorption behavior of N2O and O2 at the clean low-Miller index Si surfaces

Original language	Undefined
Pages (from-to)	2747-2754
Journal	Journal of vacuum science and technology A: vacuum, surfaces, and films
Volume	8
Issue number	3
DOIs	https://doi.org/10.1116/1.576661
Publication status	Published - 1990

Keywords

METIS-128483
IR-23684

Access to Document

10.1116/1.576661

chemical_titration

Cite this

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abstract = "Using spectroscopic differential reflectometry (SDR), Auger electron spectroscopy (AES), and low-energy electron diffraction (LEED) we have studied the room temperature adsorption behavior of N2O and O2 at the clean low-Miller index Si surfaces",

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author = "Keim, {Enrico G.} and Herbert Wormeester and {van Silfhout}, Arend",

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T1 - Chemical titration of clean silicon surfaces with N2O and O2: Atomic nature of "5x1" reconstructed Si(110)

AU - Keim, Enrico G.

AU - Wormeester, Herbert

AU - van Silfhout, Arend

PY - 1990

Y1 - 1990

N2 - Using spectroscopic differential reflectometry (SDR), Auger electron spectroscopy (AES), and low-energy electron diffraction (LEED) we have studied the room temperature adsorption behavior of N2O and O2 at the clean low-Miller index Si surfaces

AB - Using spectroscopic differential reflectometry (SDR), Auger electron spectroscopy (AES), and low-energy electron diffraction (LEED) we have studied the room temperature adsorption behavior of N2O and O2 at the clean low-Miller index Si surfaces

KW - METIS-128483

KW - IR-23684

U2 - 10.1116/1.576661

DO - 10.1116/1.576661

M3 - Article

VL - 8

SP - 2747

EP - 2754

JO - Journal of vacuum science and technology A: vacuum, surfaces, and films

JF - Journal of vacuum science and technology A: vacuum, surfaces, and films

SN - 0734-2101

IS - 3

ER -