Abstract
| Original language | Undefined |
|---|---|
| Pages (from-to) | 2747-2754 |
| Journal | Journal of vacuum science and technology A: vacuum, surfaces, and films |
| Volume | 8 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1990 |
Keywords
- METIS-128483
- IR-23684
Cite this
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Chemical titration of clean silicon surfaces with N2O and O2: Atomic nature of "5x1" reconstructed Si(110). / Keim, Enrico G.; Wormeester, Herbert; van Silfhout, Arend.
In: Journal of vacuum science and technology A: vacuum, surfaces, and films, Vol. 8, No. 3, 1990, p. 2747-2754.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Chemical titration of clean silicon surfaces with N2O and O2: Atomic nature of "5x1" reconstructed Si(110)
AU - Keim, Enrico G.
AU - Wormeester, Herbert
AU - van Silfhout, Arend
PY - 1990
Y1 - 1990
N2 - Using spectroscopic differential reflectometry (SDR), Auger electron spectroscopy (AES), and low-energy electron diffraction (LEED) we have studied the room temperature adsorption behavior of N2O and O2 at the clean low-Miller index Si surfaces
AB - Using spectroscopic differential reflectometry (SDR), Auger electron spectroscopy (AES), and low-energy electron diffraction (LEED) we have studied the room temperature adsorption behavior of N2O and O2 at the clean low-Miller index Si surfaces
KW - METIS-128483
KW - IR-23684
U2 - 10.1116/1.576661
DO - 10.1116/1.576661
M3 - Article
VL - 8
SP - 2747
EP - 2754
JO - Journal of vacuum science and technology A: vacuum, surfaces, and films
JF - Journal of vacuum science and technology A: vacuum, surfaces, and films
SN - 0734-2101
IS - 3
ER -