TY - JOUR
T1 - Chemical vapor deposition growth of bilayer graphene in between molybdenum disulfide sheets
AU - Kwieciñski, Wojciech
AU - Sotthewes, Kai
AU - Poelsema, Bene
AU - Zandvliet, Harold J.W.
AU - Bampoulis, Pantelis
PY - 2017/11/1
Y1 - 2017/11/1
N2 - Direct growth of flat micrometer-sized bilayer graphene islands in between molybdenum disulfide sheets is achieved by chemical vapor deposition of ethylene at about 800 °C. The temperature assisted decomposition of ethylene takes place mainly at molybdenum disulfide step edges. The carbon atoms intercalate at this high temperature, and during the deposition process, through defects of the molybdenum disulfide surface such as steps and wrinkles. Post growth atomic force microscopy images reveal that circular flat graphene islands have grown at a high yield. They consist of two graphene layers stacked on top of each other with a total thickness of 0.74 nm. Our results demonstrate direct, simple and high yield growth of graphene/molybdenum disulfide heterostructures, which can be of high importance in future nanoelectronic and optoelectronic applications.
AB - Direct growth of flat micrometer-sized bilayer graphene islands in between molybdenum disulfide sheets is achieved by chemical vapor deposition of ethylene at about 800 °C. The temperature assisted decomposition of ethylene takes place mainly at molybdenum disulfide step edges. The carbon atoms intercalate at this high temperature, and during the deposition process, through defects of the molybdenum disulfide surface such as steps and wrinkles. Post growth atomic force microscopy images reveal that circular flat graphene islands have grown at a high yield. They consist of two graphene layers stacked on top of each other with a total thickness of 0.74 nm. Our results demonstrate direct, simple and high yield growth of graphene/molybdenum disulfide heterostructures, which can be of high importance in future nanoelectronic and optoelectronic applications.
KW - 2D materials
KW - Chemical vapor deposition
KW - Graphene
KW - Heterostructures
KW - MoS
KW - 2023 OA procedure
UR - http://www.scopus.com/inward/record.url?scp=85021286779&partnerID=8YFLogxK
U2 - 10.1016/j.jcis.2017.06.076
DO - 10.1016/j.jcis.2017.06.076
M3 - Article
AN - SCOPUS:85021286779
SN - 0021-9797
VL - 505
SP - 776
EP - 782
JO - Journal of colloid and interface science
JF - Journal of colloid and interface science
ER -