Chemical vapor deposition of Ga dopants for fabricating ultrashallow p-n junctions at 400°C

Amir Sammak; Lin Qi; Wiebe B. De Boer; Lis K. Nanver

doi:10.1109/ICSICT.2010.5667503

Chemical vapor deposition of Ga dopants for fabricating ultrashallow p-n junctions at 400°C

Amir Sammak^*, Lin Qi, Wiebe B. De Boer, Lis K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

8 Citations (Scopus)

Abstract

Chemical Vapor Deposition (CVD) of Ga on Si is performed in a commercial Si/SiGe epitaxial reactor at temperatures from 400-650 °C and conditions for which the Ga deposits selectivity on Si and the reactivity of the Ga with Si is so low that a thin-film deposition is achieved. Contact windows to c-Si are covered with a thin layer of Ga and contacted by sputtering Al/Si(1%). On the basis of an extensive electrical I-V characterization, it is concluded that the Ga gives a substantial doping of the Si at a temperature of 400°C and the resulting p-n junctions are near-ideal.

Original language	English
Title of host publication	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages	969-971
Number of pages	3
DOIs	https://doi.org/10.1109/ICSICT.2010.5667503
Publication status	Published - 1 Dec 2010
Externally published	Yes
Event	10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010 - Shanghai, China Duration: 1 Nov 2010 → 4 Nov 2010 Conference number: 10

Conference

Conference	10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010
Country/Territory	China
City	Shanghai
Period	1/11/10 → 4/11/10

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10.1109/ICSICT.2010.5667503

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title = "Chemical vapor deposition of Ga dopants for fabricating ultrashallow p-n junctions at 400°C",

abstract = "Chemical Vapor Deposition (CVD) of Ga on Si is performed in a commercial Si/SiGe epitaxial reactor at temperatures from 400-650 °C and conditions for which the Ga deposits selectivity on Si and the reactivity of the Ga with Si is so low that a thin-film deposition is achieved. Contact windows to c-Si are covered with a thin layer of Ga and contacted by sputtering Al/Si(1%). On the basis of an extensive electrical I-V characterization, it is concluded that the Ga gives a substantial doping of the Si at a temperature of 400°C and the resulting p-n junctions are near-ideal.",

author = "Amir Sammak and Lin Qi and {De Boer}, {Wiebe B.} and Nanver, {Lis K.}",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/ICSICT.2010.5667503",

language = "English",

isbn = "9781424457984",

pages = "969--971",

booktitle = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010 ; Conference date: 01-11-2010 Through 04-11-2010",

}

Sammak, A, Qi, L, De Boer, WB & Nanver, LK 2010, Chemical vapor deposition of Ga dopants for fabricating ultrashallow p-n junctions at 400°C. in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667503, pp. 969-971, 10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010, Shanghai, China, 1/11/10. https://doi.org/10.1109/ICSICT.2010.5667503

Chemical vapor deposition of Ga dopants for fabricating ultrashallow p-n junctions at 400°C. / Sammak, Amir; Qi, Lin; De Boer, Wiebe B. et al.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 969-971 5667503.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Chemical vapor deposition of Ga dopants for fabricating ultrashallow p-n junctions at 400°C

AU - Sammak, Amir

AU - Qi, Lin

AU - De Boer, Wiebe B.

AU - Nanver, Lis K.

N1 - Conference code: 10

PY - 2010/12/1

Y1 - 2010/12/1

N2 - Chemical Vapor Deposition (CVD) of Ga on Si is performed in a commercial Si/SiGe epitaxial reactor at temperatures from 400-650 °C and conditions for which the Ga deposits selectivity on Si and the reactivity of the Ga with Si is so low that a thin-film deposition is achieved. Contact windows to c-Si are covered with a thin layer of Ga and contacted by sputtering Al/Si(1%). On the basis of an extensive electrical I-V characterization, it is concluded that the Ga gives a substantial doping of the Si at a temperature of 400°C and the resulting p-n junctions are near-ideal.

AB - Chemical Vapor Deposition (CVD) of Ga on Si is performed in a commercial Si/SiGe epitaxial reactor at temperatures from 400-650 °C and conditions for which the Ga deposits selectivity on Si and the reactivity of the Ga with Si is so low that a thin-film deposition is achieved. Contact windows to c-Si are covered with a thin layer of Ga and contacted by sputtering Al/Si(1%). On the basis of an extensive electrical I-V characterization, it is concluded that the Ga gives a substantial doping of the Si at a temperature of 400°C and the resulting p-n junctions are near-ideal.

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U2 - 10.1109/ICSICT.2010.5667503

DO - 10.1109/ICSICT.2010.5667503

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AN - SCOPUS:78751550701

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SP - 969

EP - 971

BT - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

T2 - 10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010

Y2 - 1 November 2010 through 4 November 2010

ER -

Chemical vapor deposition of Ga dopants for fabricating ultrashallow p-n junctions at 400°C

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