Chemical vapor deposition of Ga dopants for fabricating ultrashallow p-n junctions at 400°C

Amir Sammak*, Lin Qi, Wiebe B. De Boer, Lis K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

8 Citations (Scopus)

Abstract

Chemical Vapor Deposition (CVD) of Ga on Si is performed in a commercial Si/SiGe epitaxial reactor at temperatures from 400-650 °C and conditions for which the Ga deposits selectivity on Si and the reactivity of the Ga with Si is so low that a thin-film deposition is achieved. Contact windows to c-Si are covered with a thin layer of Ga and contacted by sputtering Al/Si(1%). On the basis of an extensive electrical I-V characterization, it is concluded that the Ga gives a substantial doping of the Si at a temperature of 400°C and the resulting p-n junctions are near-ideal.

Original languageEnglish
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages969-971
Number of pages3
DOIs
Publication statusPublished - 1 Dec 2010
Externally publishedYes
Event10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010 - Shanghai, China
Duration: 1 Nov 20104 Nov 2010
Conference number: 10

Conference

Conference10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010
CountryChina
CityShanghai
Period1/11/104/11/10

Fingerprint Dive into the research topics of 'Chemical vapor deposition of Ga dopants for fabricating ultrashallow p-n junctions at 400°C'. Together they form a unique fingerprint.

  • Cite this

    Sammak, A., Qi, L., De Boer, W. B., & Nanver, L. K. (2010). Chemical vapor deposition of Ga dopants for fabricating ultrashallow p-n junctions at 400°C. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 969-971). [5667503] https://doi.org/10.1109/ICSICT.2010.5667503