Chemical vapor deposition of PureB layers for solar cell application

K.R.C. Mok; A.H.G. Vlooswijk; J. Derakhshandeh; L.K. Nanver

doi:10.1109/PVSC.2013.6744921

Chemical vapor deposition of PureB layers for solar cell application

K.R.C. Mok, A.H.G. Vlooswijk, J. Derakhshandeh, L.K. Nanver

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

Abstract

A damage-free Si doping method using chemical vapor deposition of pure boron (PureB) layers is investigated for p⁺ doping of solar cell emitters. After PureB deposition the layer is thermally diffused into the Si and evaluated by determining the dopant profile, sheet resistance and effective carrier lifetime. It was found that dopant profiles and sheet resistance could be controlled by optimizing the thickness of the initial PureB layer and the subsequent annealing conditions. Compared to a boron ion implanted sample of the same sheet resistance, samples fabricated with the PureB method showed higher effective lifetime of about 300 μs as compared to 75 μs. In addition to providing defect-free junctions, PureB deposits selectively on silicon and not on silicon oxide, and may therefore be attractive for novel cell architectures.

Original language	English
Title of host publication	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Publisher	IEEE
Pages	2234-2238
Number of pages	5
ISBN (Print)	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6744921
Publication status	Published - 1 Jan 2013
Externally published	Yes
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa Convention Center, Tampa, United States Duration: 16 Jun 2013 → 21 Jun 2013 Conference number: 39 http://www.ieee-pvsc.org/PVSC39/

Conference

Conference	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Abbreviated title	PVSC
Country/Territory	United States
City	Tampa
Period	16/06/13 → 21/06/13
Internet address	http://www.ieee-pvsc.org/PVSC39/

Keywords

Boron doping
Charge carrier lifetimes
Chemical vapor deposition
Crystalline silicon
Silicon

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/PVSC.2013.6744921

Cite this

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title = "Chemical vapor deposition of PureB layers for solar cell application",

abstract = "A damage-free Si doping method using chemical vapor deposition of pure boron (PureB) layers is investigated for p+ doping of solar cell emitters. After PureB deposition the layer is thermally diffused into the Si and evaluated by determining the dopant profile, sheet resistance and effective carrier lifetime. It was found that dopant profiles and sheet resistance could be controlled by optimizing the thickness of the initial PureB layer and the subsequent annealing conditions. Compared to a boron ion implanted sample of the same sheet resistance, samples fabricated with the PureB method showed higher effective lifetime of about 300 μs as compared to 75 μs. In addition to providing defect-free junctions, PureB deposits selectively on silicon and not on silicon oxide, and may therefore be attractive for novel cell architectures.",

keywords = "Boron doping, Charge carrier lifetimes, Chemical vapor deposition, Crystalline silicon, Silicon",

author = "K.R.C. Mok and A.H.G. Vlooswijk and J. Derakhshandeh and L.K. Nanver",

year = "2013",

month = jan,

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doi = "10.1109/PVSC.2013.6744921",

language = "English",

isbn = "9781479932993",

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booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",

publisher = "IEEE",

address = "United States",

note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013, PVSC ; Conference date: 16-06-2013 Through 21-06-2013",

url = "http://www.ieee-pvsc.org/PVSC39/",

}

TY - GEN

T1 - Chemical vapor deposition of PureB layers for solar cell application

AU - Mok, K.R.C.

AU - Vlooswijk, A.H.G.

AU - Derakhshandeh, J.

AU - Nanver, L.K.

N1 - Conference code: 39

PY - 2013/1/1

Y1 - 2013/1/1

N2 - A damage-free Si doping method using chemical vapor deposition of pure boron (PureB) layers is investigated for p+ doping of solar cell emitters. After PureB deposition the layer is thermally diffused into the Si and evaluated by determining the dopant profile, sheet resistance and effective carrier lifetime. It was found that dopant profiles and sheet resistance could be controlled by optimizing the thickness of the initial PureB layer and the subsequent annealing conditions. Compared to a boron ion implanted sample of the same sheet resistance, samples fabricated with the PureB method showed higher effective lifetime of about 300 μs as compared to 75 μs. In addition to providing defect-free junctions, PureB deposits selectively on silicon and not on silicon oxide, and may therefore be attractive for novel cell architectures.

AB - A damage-free Si doping method using chemical vapor deposition of pure boron (PureB) layers is investigated for p+ doping of solar cell emitters. After PureB deposition the layer is thermally diffused into the Si and evaluated by determining the dopant profile, sheet resistance and effective carrier lifetime. It was found that dopant profiles and sheet resistance could be controlled by optimizing the thickness of the initial PureB layer and the subsequent annealing conditions. Compared to a boron ion implanted sample of the same sheet resistance, samples fabricated with the PureB method showed higher effective lifetime of about 300 μs as compared to 75 μs. In addition to providing defect-free junctions, PureB deposits selectively on silicon and not on silicon oxide, and may therefore be attractive for novel cell architectures.

KW - Boron doping

KW - Charge carrier lifetimes

KW - Chemical vapor deposition

KW - Crystalline silicon

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=84896470256&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2013.6744921

DO - 10.1109/PVSC.2013.6744921

M3 - Conference contribution

AN - SCOPUS:84896470256

SN - 9781479932993

SP - 2234

EP - 2238

BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

PB - IEEE

T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

Y2 - 16 June 2013 through 21 June 2013

ER -

Chemical vapor deposition of PureB layers for solar cell application

Abstract

Conference

Keywords

UN SDGs

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