Chemical vapor deposition of PureB layers for solar cell application

K.R.C. Mok, A.H.G. Vlooswijk, J. Derakhshandeh, L.K. Nanver

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)


A damage-free Si doping method using chemical vapor deposition of pure boron (PureB) layers is investigated for p+ doping of solar cell emitters. After PureB deposition the layer is thermally diffused into the Si and evaluated by determining the dopant profile, sheet resistance and effective carrier lifetime. It was found that dopant profiles and sheet resistance could be controlled by optimizing the thickness of the initial PureB layer and the subsequent annealing conditions. Compared to a boron ion implanted sample of the same sheet resistance, samples fabricated with the PureB method showed higher effective lifetime of about 300 μs as compared to 75 μs. In addition to providing defect-free junctions, PureB deposits selectively on silicon and not on silicon oxide, and may therefore be attractive for novel cell architectures.

Original languageEnglish
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Number of pages5
ISBN (Print)9781479932993
Publication statusPublished - 1 Jan 2013
Externally publishedYes
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa Convention Center, Tampa, United States
Duration: 16 Jun 201321 Jun 2013
Conference number: 39


Conference39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Abbreviated titlePVSC
Country/TerritoryUnited States
Internet address


  • Boron doping
  • Charge carrier lifetimes
  • Chemical vapor deposition
  • Crystalline silicon
  • Silicon


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