Chemically anisotropic single-crystalline silicon nanotetrahedra

J.W. Berenschot; N.R. Tas; H.V. Jansen; M.C. Elwenspoek

doi:10.1088/0957-4484/20/47/475302

Chemically anisotropic single-crystalline silicon nanotetrahedra

J.W. Berenschot
, N.R. Tas
, H.V. Jansen
, M.C. Elwenspoek

Research output: Contribution to journal › Article › Academic › peer-review

19 Citations (Scopus)

8 Downloads (Pure)

Abstract

We describe a method based on silicon micromachining to machine single-crystalline silicon nanoparticles bounded by (111) faces in the form of tetrahedra. The technology allows the fabrication of tetrahedra in a size range from 20 to 1000 nm side length, and gives the possibility to chemically modify sites (faces, edges and/or tips) within certain limits. The chemical modification is anticipated to facilitate the self-assembly into new supermaterials such as photonic crystals in the diamond lattice.

Original language	English
Article number	10.1088/0957-4484/20/47/475302
Pages (from-to)	1-7
Number of pages	7
Journal	Nanotechnology
Volume	20
Issue number	47
DOIs	https://doi.org/10.1088/0957-4484/20/47/475302
Publication status	Published - 26 Oct 2009

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

n/a OA procedure
TST-Self Assembly

Access to Document

10.1088/0957-4484/20/47/475302

Cite this

@article{37f317f3dd33442b81f0592900b559c4,

title = "Chemically anisotropic single-crystalline silicon nanotetrahedra",

abstract = "We describe a method based on silicon micromachining to machine single-crystalline silicon nanoparticles bounded by (111) faces in the form of tetrahedra. The technology allows the fabrication of tetrahedra in a size range from 20 to 1000 nm side length, and gives the possibility to chemically modify sites (faces, edges and/or tips) within certain limits. The chemical modification is anticipated to facilitate the self-assembly into new supermaterials such as photonic crystals in the diamond lattice.",

keywords = "n/a OA procedure, TST-Self Assembly",

author = "J.W. Berenschot and N.R. Tas and H.V. Jansen and M.C. Elwenspoek",

note = "10.1088/0957-4484/20/47/475302 ",

year = "2009",

month = oct,

day = "26",

doi = "10.1088/0957-4484/20/47/475302",

language = "English",

volume = "20",

pages = "1--7",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "Institute of Physics (IOP)",

number = "47",

}

TY - JOUR

T1 - Chemically anisotropic single-crystalline silicon nanotetrahedra

AU - Berenschot, J.W.

AU - Tas, N.R.

AU - Jansen, H.V.

AU - Elwenspoek, M.C.

N1 - 10.1088/0957-4484/20/47/475302

PY - 2009/10/26

Y1 - 2009/10/26

N2 - We describe a method based on silicon micromachining to machine single-crystalline silicon nanoparticles bounded by (111) faces in the form of tetrahedra. The technology allows the fabrication of tetrahedra in a size range from 20 to 1000 nm side length, and gives the possibility to chemically modify sites (faces, edges and/or tips) within certain limits. The chemical modification is anticipated to facilitate the self-assembly into new supermaterials such as photonic crystals in the diamond lattice.

AB - We describe a method based on silicon micromachining to machine single-crystalline silicon nanoparticles bounded by (111) faces in the form of tetrahedra. The technology allows the fabrication of tetrahedra in a size range from 20 to 1000 nm side length, and gives the possibility to chemically modify sites (faces, edges and/or tips) within certain limits. The chemical modification is anticipated to facilitate the self-assembly into new supermaterials such as photonic crystals in the diamond lattice.

KW - n/a OA procedure

KW - TST-Self Assembly

U2 - 10.1088/0957-4484/20/47/475302

DO - 10.1088/0957-4484/20/47/475302

M3 - Article

SN - 0957-4484

VL - 20

SP - 1

EP - 7

JO - Nanotechnology

JF - Nanotechnology

IS - 47

M1 - 10.1088/0957-4484/20/47/475302

ER -

Chemically anisotropic single-crystalline silicon nanotetrahedra

Abstract

UN SDGs

Keywords

Access to Document

Fingerprint

Cite this