TY - JOUR
T1 - Chip-integrated extended-cavity mode-locked laser in the visible
AU - Winkler, Lisa V.
AU - Neijts, Govert
AU - Bastiaens, Hubertus M.J.
AU - Goodwin, Melissa J.
AU - van Rees, Albert
AU - Schrinner, Philip P.J.
AU - Hoekman, Marcel
AU - Dekker, Ronald
AU - do Nascimento Jr., Adriano R.
AU - van der Slot, Peter J.M.
AU - Nölleke, Christian
AU - Boller, Klaus-J
N1 - Financial transaction number:
2500171132
PY - 2024/12/15
Y1 - 2024/12/15
N2 - Mode-locked lasers are of interest for applications such as biological imaging, nonlinear frequency conversion, and single-photon generation. In the infrared, chip-integrated mode-locked lasers have been demonstrated through integration of laser diodes with low-loss photonic circuits. However, additional challenges, such as a higher propagation loss and smaller alignment tolerances, have prevented the realization of such lasers in the visible range. Here, we demonstrate the first, to the best of our knowledge, chip-integrated mode-locked diode laser in the visible using an integrated photonic circuit for cavity extension. Based on a gallium arsenide gain chip and a low-loss silicon nitride feedback circuit, the laser is passively mode-locked using a saturable absorber (SA) implemented by focused ion beam (FIB) milling. At a center wavelength of 642 nm, the laser shows an average output power of 3.4 mW, with a spectral bandwidth of 1.5 nm at a repetition rate of 7.84 GHz.
AB - Mode-locked lasers are of interest for applications such as biological imaging, nonlinear frequency conversion, and single-photon generation. In the infrared, chip-integrated mode-locked lasers have been demonstrated through integration of laser diodes with low-loss photonic circuits. However, additional challenges, such as a higher propagation loss and smaller alignment tolerances, have prevented the realization of such lasers in the visible range. Here, we demonstrate the first, to the best of our knowledge, chip-integrated mode-locked diode laser in the visible using an integrated photonic circuit for cavity extension. Based on a gallium arsenide gain chip and a low-loss silicon nitride feedback circuit, the laser is passively mode-locked using a saturable absorber (SA) implemented by focused ion beam (FIB) milling. At a center wavelength of 642 nm, the laser shows an average output power of 3.4 mW, with a spectral bandwidth of 1.5 nm at a repetition rate of 7.84 GHz.
U2 - 10.1364/OL.540675
DO - 10.1364/OL.540675
M3 - Article
SN - 0146-9592
VL - 49
SP - 6916
EP - 6919
JO - Optics letters
JF - Optics letters
IS - 24
ER -