CMOS-Compatible Electronic–Plasmonic Transducers Based on Plasmonic Tunnel Junctions and Schottky Diodes

Fangwei Wang, Yan Liu, Thanh Xuan Hoang, Hong Son Chu, Soo Jin Chua, Christian A. Nijhuis*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

8 Citations (Scopus)
71 Downloads (Pure)

Abstract

To develop methods to generate, manipulate, and detect plasmonic signals by electrical means with complementary metal–oxide–semiconductor (CMOS)-compatible materials is essential to realize on-chip electronic–plasmonic transduction. Here, electrically driven, CMOS-compatible electronic–plasmonic transducers with Al–AlOX–Cu tunnel junctions as the excitation source of surface plasmon polaritons (SPPs) and Si–Cu Schottky diodes as the detector of SPPs, connected via plasmonic strip waveguides of Cu, are demonstrated. Remarkably, the electronic–plasmonic transducers exhibit overall transduction efficiency of 1.85 ± 0.03%, five times higher than previously reported transducers with two tunnel junctions (metal–insulator–metal (MIM)–MIM transducers) where SPPs are detected based on optical rectification. The result establishes a new platform to convert electronic signals to plasmonic signals via electrical means, paving the way toward CMOS-compatible plasmonic components.

Original languageEnglish
Article number2105684
JournalSmall
Volume18
Issue number1
Early online date5 Nov 2021
DOIs
Publication statusPublished - 6 Jan 2022

Keywords

  • UT-Hybrid-D

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