CMOS-MEMS Post Processing Compatible Capacitively Transduced GeSi Resonators

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    Abstract

    This paper reports on the fabrication, simulation and characterization of post processing compatible poly GeSi MEM resonators. The resonators are fabricated, following a two masks process flow, using 1.5 μm thick low stress, highly conductive insitu boron doped LPCVD poly Ge0.7Si0.3 structural layers. All the process steps are kept below 450 °C to potentially avoid CMOS degradation, a prime concern for post processing compatible MEMS. A narrow gap of ~40 nm is achieved using a sacrificial gap oxide layer between the vibrating structure and the electrodes. The GeSi resonators, square plate and circular disk, are excited in their respective Lamé and Wine glass modes exhibiting the resonance peaks at 47.9 MHz and 72.77 MHz, respectively, with the quality factor around 200,000 in air, the highest reported till date for post processing compatible capacitively transduced resonators
    Original languageUndefined
    Title of host publicationProceedings of 2012 IEEE International Frequency Control Symposium (IFCS)
    Place of PublicationUSA
    PublisherIEEE Electron Devices Society
    Pages1-4
    Number of pages4
    ISBN (Print)978-1-4577-1820-5
    DOIs
    Publication statusPublished - 25 Jul 2012

    Publication series

    Name
    PublisherIEEE Electron Devices Society

    Keywords

    • IR-80966
    • METIS-287945
    • quality factor
    • motional resistance
    • EWI-22084
    • lamé mode
    • Post processing
    • Poly GeSi
    • microelectromechanical resonator

    Cite this

    Kazmi, S. N. R., Aarnink, A. A. I., Salm, C., & Schmitz, J. (2012). CMOS-MEMS Post Processing Compatible Capacitively Transduced GeSi Resonators. In Proceedings of 2012 IEEE International Frequency Control Symposium (IFCS) (pp. 1-4). USA: IEEE Electron Devices Society. https://doi.org/10.1109/FCS.2012.6243633