CMOS tunable linear current divider

Clemens Mensink; C.H.J. Mensink; Bram Nauta

doi:10.1049/el:19960620

CMOS tunable linear current divider

Clemens Mensink, C.H.J. Mensink, Bram Nauta

Research output: Contribution to journal › Article › Academic › peer-review

6 Citations (Scopus)

288 Downloads (Pure)

Abstract

A CMOS current divider is proposed which can handle an input current as large as the bias current, i.e. the modulation depth can be 100%;. The performance of the circuit is nearly independent of transistor characteristics. Therefore the circuit is well applicable for designs in modern submicron processes. The measured divider can be tuned over more than a factor of 2

Original language	Undefined
Pages (from-to)	889-890
Journal	Electronics letters
Volume	32
Issue number	10
DOIs	https://doi.org/10.1049/el:19960620
Publication status	Published - 1996

Keywords

METIS-111606
IR-14440

Access to Document

10.1049/el:19960620

cmos_tuneable

Cite this

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title = "CMOS tunable linear current divider",

abstract = "A CMOS current divider is proposed which can handle an input current as large as the bias current, i.e. the modulation depth can be 100%;. The performance of the circuit is nearly independent of transistor characteristics. Therefore the circuit is well applicable for designs in modern submicron processes. The measured divider can be tuned over more than a factor of 2",

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year = "1996",

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language = "Undefined",

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T1 - CMOS tunable linear current divider

AU - Mensink, Clemens

AU - Mensink, C.H.J.

AU - Nauta, Bram

PY - 1996

Y1 - 1996

N2 - A CMOS current divider is proposed which can handle an input current as large as the bias current, i.e. the modulation depth can be 100%;. The performance of the circuit is nearly independent of transistor characteristics. Therefore the circuit is well applicable for designs in modern submicron processes. The measured divider can be tuned over more than a factor of 2

AB - A CMOS current divider is proposed which can handle an input current as large as the bias current, i.e. the modulation depth can be 100%;. The performance of the circuit is nearly independent of transistor characteristics. Therefore the circuit is well applicable for designs in modern submicron processes. The measured divider can be tuned over more than a factor of 2

KW - METIS-111606

KW - IR-14440

U2 - 10.1049/el:19960620

DO - 10.1049/el:19960620

M3 - Article

SN - 0013-5194

VL - 32

SP - 889

EP - 890

JO - Electronics letters

JF - Electronics letters

IS - 10

ER -