Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon

B.C. Min, J.C. Lodder, R. Jansen, K. Motohashi

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    Abstract

    The resistance of Co–Al2O3–Si tunnel contacts for electrical spin injection from a ferromagnet into silicon is investigated. The contacts form a substantial Schottky barrier, 0.7 eV, which plays a dominant role in the electronic transport. On Si with a low doping concentration (∼1015 cm−3), the contact resistance is affected by the Al2O3 tunnel barrier only in the forward bias. In the reverse bias (the spin injection condition), the Schottky barrier results in a very high contact resistance, ∼ 102 Ω m2. While the contact resistance is improved to ∼ 10−2 Ω m2 using Si with a high doping concentration ( ∼ 5×1019 cm−3), it is still about five to six orders of magnitude higher than the value needed for resistance matching to silicon.
    Original languageEnglish
    Article number08S701
    Number of pages3
    JournalJournal of Applied Physics
    Volume99
    Issue number8
    DOIs
    Publication statusPublished - 2006

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