Coexistence of (2x1) and c(4x2) phases on Ge(001)

Henricus J.W. Zandvliet; Raoul van Gastel; O. Gurlu; Bene Poelsema

doi:10.1016/j.physleta.2004.04.056

Coexistence of (2x1) and c(4x2) phases on Ge(001)

Henricus J.W. Zandvliet
, Raoul van Gastel
, O. Gurlu
, Bene Poelsema

Research output: Contribution to journal › Article › Academic › peer-review

10 Citations (Scopus)

5 Downloads (Pure)

Abstract

We found that the c(4×2) to (2×1) phase transition on Ge(001) occurs via an intermediate temperature range where both phases coexist in a well-ordered, one-dimensional domain pattern. A simple model that takes into account collective dynamic buckling of the surface dimers, strain relaxation energy and domain wall formation energy is presented.

Original language	Undefined
Pages (from-to)	457-461
Number of pages	5
Journal	Physics letters A
Volume	326
Issue number	5-6
DOIs	https://doi.org/10.1016/j.physleta.2004.04.056
Publication status	Published - 2004

Keywords

IR-73072
METIS-220682

Access to Document

10.1016/j.physleta.2004.04.056

Cite this

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title = "Coexistence of (2x1) and c(4x2) phases on Ge(001)",

abstract = "We found that the c(4×2) to (2×1) phase transition on Ge(001) occurs via an intermediate temperature range where both phases coexist in a well-ordered, one-dimensional domain pattern. A simple model that takes into account collective dynamic buckling of the surface dimers, strain relaxation energy and domain wall formation energy is presented.",

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T1 - Coexistence of (2x1) and c(4x2) phases on Ge(001)

AU - Zandvliet, Henricus J.W.

AU - van Gastel, Raoul

AU - Gurlu, O.

AU - Poelsema, Bene

PY - 2004

Y1 - 2004

N2 - We found that the c(4×2) to (2×1) phase transition on Ge(001) occurs via an intermediate temperature range where both phases coexist in a well-ordered, one-dimensional domain pattern. A simple model that takes into account collective dynamic buckling of the surface dimers, strain relaxation energy and domain wall formation energy is presented.

AB - We found that the c(4×2) to (2×1) phase transition on Ge(001) occurs via an intermediate temperature range where both phases coexist in a well-ordered, one-dimensional domain pattern. A simple model that takes into account collective dynamic buckling of the surface dimers, strain relaxation energy and domain wall formation energy is presented.

KW - IR-73072

KW - METIS-220682

U2 - 10.1016/j.physleta.2004.04.056

DO - 10.1016/j.physleta.2004.04.056

M3 - Article

SN - 0375-9601

VL - 326

SP - 457

EP - 461

JO - Physics letters A

JF - Physics letters A

IS - 5-6

ER -