Comb capacitor structures for measurement of post-processed layers

D. Roy, J.H. Klootwijk, N.A.M. Verhaegh, H.H.A.J. Roosen, Robertus A.M. Wolters

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    2 Citations (Scopus)
    266 Downloads (Pure)


    We present a simple comb capacitive measurement structure to monitor the properties of post-processed layers. These measurement structures are easily fabricated in a single step in the last metallization layer of a standard IC process, while the post-processing layer in this article is formed over these comb structures by spray coating. The capacitive coupling of the structure on the substrate is modeled based on the electric field distribution around the structure. The change in composition of this post-processed layer is analyzed in terms of measured capacitance values.
    Original languageUndefined
    Title of host publicationProceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures
    Place of PublicationPiscataway
    PublisherIEEE Computer Society Press
    Number of pages6
    ISBN (Print)978-1-4244-1801-5
    Publication statusPublished - 24 Mar 2008
    Event21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008 - University of Edinburgh, Edinburgh, United Kingdom
    Duration: 24 Mar 200827 Mar 2008
    Conference number: 21

    Publication series

    PublisherIEEE Computer Society Press


    Conference21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008
    Abbreviated titleICMTS
    Country/TerritoryUnited Kingdom
    Internet address


    • SC-ICF: Integrated Circuit Fabrication
    • METIS-251078
    • EWI-13058
    • IR-64876

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