Abstract
We present a simple comb capacitive measurement structure to monitor the properties of post-processed layers. These measurement structures are easily fabricated in a single step in the last metallization layer of a standard IC process, while the post-processing layer in this article is formed over these comb structures by spray coating. The capacitive coupling of the structure on the substrate is modeled based on the electric field distribution around the structure. The change in composition of this post-processed layer is analyzed in terms of measured capacitance values.
Original language | Undefined |
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Title of host publication | Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures |
Place of Publication | Piscataway |
Publisher | IEEE Computer Society Press |
Pages | 205-209 |
Number of pages | 6 |
ISBN (Print) | 978-1-4244-1801-5 |
DOIs | |
Publication status | Published - 24 Mar 2008 |
Event | 21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008 - University of Edinburgh, Edinburgh, United Kingdom Duration: 24 Mar 2008 → 27 Mar 2008 Conference number: 21 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog08.pdf |
Publication series
Name | |
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Publisher | IEEE Computer Society Press |
Number | DTR08-9 |
Conference
Conference | 21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008 |
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Abbreviated title | ICMTS |
Country/Territory | United Kingdom |
City | Edinburgh |
Period | 24/03/08 → 27/03/08 |
Internet address |
Keywords
- SC-ICF: Integrated Circuit Fabrication
- METIS-251078
- EWI-13058
- IR-64876