Comb capacitor structures for measurement of post-processed layers

D. Roy; J.H. Klootwijk; N.A.M. Verhaegh; H.H.A.J. Roosen; R.A.M. Wolters

doi:10.1109/ICMTS.2008.4509339

Comb capacitor structures for measurement of post-processed layers

D. Roy, J.H. Klootwijk, N.A.M. Verhaegh, H.H.A.J. Roosen, R.A.M. Wolters

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

461 Downloads (Pure)

Abstract

We present a simple comb capacitive measurement structure to monitor the properties of post-processed layers. These measurement structures are easily fabricated in a single step in the last metallization layer of a standard IC process, while the post-processing layer in this article is formed over these comb structures by spray coating. The capacitive coupling of the structure on the substrate is modeled based on the electric field distribution around the structure. The change in composition of this post-processed layer is analyzed in terms of measured capacitance values.

Original language	English
Title of host publication	Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	205-209
Number of pages	6
ISBN (Print)	978-1-4244-1800-8, 978-1-4244-1801-5 (CD)
DOIs	https://doi.org/10.1109/ICMTS.2008.4509339
Publication status	Published - 24 Mar 2008
Externally published	Yes
Event	21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008 - University of Edinburgh, Edinburgh, United Kingdom Duration: 24 Mar 2008 → 27 Mar 2008 Conference number: 21 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog08.pdf

Conference

Conference	21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008
Abbreviated title	ICMTS
Country/Territory	United Kingdom
City	Edinburgh
Period	24/03/08 → 27/03/08
Internet address	http://www.homepages.ed.ac.uk/ajw/ICMTS/prog08.pdf

Keywords

SC-ICF: Integrated Circuit Fabrication
n/a OA procedure

Access to Document

10.1109/ICMTS.2008.4509339

Cite this

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title = "Comb capacitor structures for measurement of post-processed layers",

abstract = "We present a simple comb capacitive measurement structure to monitor the properties of post-processed layers. These measurement structures are easily fabricated in a single step in the last metallization layer of a standard IC process, while the post-processing layer in this article is formed over these comb structures by spray coating. The capacitive coupling of the structure on the substrate is modeled based on the electric field distribution around the structure. The change in composition of this post-processed layer is analyzed in terms of measured capacitance values.",

keywords = "SC-ICF: Integrated Circuit Fabrication, n/a OA procedure",

author = "D. Roy and J.H. Klootwijk and N.A.M. Verhaegh and H.H.A.J. Roosen and R.A.M. Wolters",

note = "10.1109/ICMTS.2008.4509339 ; 21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008, ICMTS ; Conference date: 24-03-2008 Through 27-03-2008",

year = "2008",

month = mar,

day = "24",

doi = "10.1109/ICMTS.2008.4509339",

language = "English",

isbn = "978-1-4244-1800-8",

pages = "205--209",

booktitle = "Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures",

publisher = "IEEE",

address = "United States",

url = "http://www.homepages.ed.ac.uk/ajw/ICMTS/prog08.pdf",

}

Roy, D, Klootwijk, JH, Verhaegh, NAM, Roosen, HHAJ & Wolters, RAM 2008, Comb capacitor structures for measurement of post-processed layers. in Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures. IEEE, Piscataway, NJ, pp. 205-209, 21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008, Edinburgh, United Kingdom, 24/03/08. https://doi.org/10.1109/ICMTS.2008.4509339

TY - GEN

T1 - Comb capacitor structures for measurement of post-processed layers

AU - Roy, D.

AU - Klootwijk, J.H.

AU - Verhaegh, N.A.M.

AU - Roosen, H.H.A.J.

AU - Wolters, R.A.M.

N1 - Conference code: 21

PY - 2008/3/24

Y1 - 2008/3/24

N2 - We present a simple comb capacitive measurement structure to monitor the properties of post-processed layers. These measurement structures are easily fabricated in a single step in the last metallization layer of a standard IC process, while the post-processing layer in this article is formed over these comb structures by spray coating. The capacitive coupling of the structure on the substrate is modeled based on the electric field distribution around the structure. The change in composition of this post-processed layer is analyzed in terms of measured capacitance values.

AB - We present a simple comb capacitive measurement structure to monitor the properties of post-processed layers. These measurement structures are easily fabricated in a single step in the last metallization layer of a standard IC process, while the post-processing layer in this article is formed over these comb structures by spray coating. The capacitive coupling of the structure on the substrate is modeled based on the electric field distribution around the structure. The change in composition of this post-processed layer is analyzed in terms of measured capacitance values.

KW - SC-ICF: Integrated Circuit Fabrication

KW - n/a OA procedure

U2 - 10.1109/ICMTS.2008.4509339

DO - 10.1109/ICMTS.2008.4509339

M3 - Conference contribution

SN - 978-1-4244-1800-8

SN - 978-1-4244-1801-5 (CD)

SP - 205

EP - 209

BT - Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures

PB - IEEE

CY - Piscataway, NJ

T2 - 21st IEEE International Conference on Microelectronic Test Structures, ICMTS 2008

Y2 - 24 March 2008 through 27 March 2008

ER -

Comb capacitor structures for measurement of post-processed layers

Abstract

Conference

Keywords

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