Combining retraction edge lithography and plasma etching for arbitrary contour nanoridge fabrication

Yiping Zhao, Henricus V. Jansen, Meint J. de Boer, Johan W. Berenschot, Dominique Bouwes, Miriam Girones nogue, Jurriaan Huskens, Niels Roelof Tas

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Edge lithography in combination with fluorine-based plasma etching is employed to avoid the dependence on crystal orientation in single crystal silicon to create monolithic nanoridges with arbitrary contours. This is demonstrated by using a mask with circular structures and Si etching at cryogenic temperature with SF6+O2 plasma mixtures. Initially, the explored etch recipe was used with Cr as the masking material. Although nanoridges with perfect vertical sidewalls have been achieved, Cr causes severe sidewall roughness due to line edge roughness. Therefore, an SU-8 polymer is used instead. Although the SU-8 pattern definition needs further improvement, we demonstrate the possibility of fabricating Si nanoridges of arbitrary contours providing a width below 50 nm and a height between 25 and 500 nm with smooth surface finish. Artifacts in the ridge profile are observed and are mainly caused by the bird's beak phenomenon which is characteristic for the used LOCOS process.
Original languageEnglish
Pages (from-to)1-13
Number of pages13
JournalJournal of micromechanics and microengineering
Issue number9
Publication statusPublished - 17 Aug 2010


  • EWI-18541
  • IR-73475
  • METIS-274020


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