Comment on "Electronic structure of the high-temperature Ge(001) surface studied by valence ban photo-emission" [Surface Science 537 (2003) L423-L428]

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)
Original languageEnglish
Pages (from-to)452-456
Number of pages5
JournalSurface science
Volume547
Issue number3
DOIs
Publication statusPublished - 2003

Keywords

  • IR-73074
  • METIS-214150

Cite this

@article{dc33193d8ab34da18017162d355ec335,
title = "Comment on {"}Electronic structure of the high-temperature Ge(001) surface studied by valence ban photo-emission{"} [Surface Science 537 (2003) L423-L428]",
keywords = "IR-73074, METIS-214150",
author = "Bene Poelsema and {van Vroonhoven}, E. and Zandvliet, {Henricus J.W.}",
year = "2003",
doi = "10.1016/j.susc.2003.10.034",
language = "English",
volume = "547",
pages = "452--456",
journal = "Surface science",
issn = "0039-6028",
publisher = "Elsevier",
number = "3",

}

Comment on "Electronic structure of the high-temperature Ge(001) surface studied by valence ban photo-emission" [Surface Science 537 (2003) L423-L428]. / Poelsema, Bene; van Vroonhoven, E.; Zandvliet, Henricus J.W.

In: Surface science, Vol. 547, No. 3, 2003, p. 452-456.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Comment on "Electronic structure of the high-temperature Ge(001) surface studied by valence ban photo-emission" [Surface Science 537 (2003) L423-L428]

AU - Poelsema, Bene

AU - van Vroonhoven, E.

AU - Zandvliet, Henricus J.W.

PY - 2003

Y1 - 2003

KW - IR-73074

KW - METIS-214150

U2 - 10.1016/j.susc.2003.10.034

DO - 10.1016/j.susc.2003.10.034

M3 - Article

VL - 547

SP - 452

EP - 456

JO - Surface science

JF - Surface science

SN - 0039-6028

IS - 3

ER -