Comment on ''Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers'' [Appl. Phys. Lett. 83, 951 (2003)]

R. Jansen; O.M.J. van 't Erve; F.M. Postma; J.C. Lodder

doi:10.1063/1.1739521

Comment on ''Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers'' [Appl. Phys. Lett. 83, 951 (2003)]

R. Jansen, O.M.J. van 't Erve, F.M. Postma, J.C. Lodder

Research output: Contribution to journal › Article › Academic › peer-review

11 Downloads (Pure)

Abstract

In a recent letter,1 it was reported that a magnetic tunnel transistor ~MTT! with a spin-valve base can exhibit high magnetocurrent ~MC! as well as output collector current in the microampere regime. While the presented experimental results are sound and unambiguous, the comparison with the spin-valve transistor ~SVT! is not. In this comment, we wish to address this by separately comparing the output current, transfer ratio, and MC of both devices.

Original language	English
Pages (from-to)	4337-4338
Number of pages	2
Journal	Applied physics letters
Volume	84
Issue number	21
DOIs	https://doi.org/10.1063/1.1739521
Publication status	Published - 2004

Keywords

SMI-NE: From 2006 in EWI-NE

Access to Document

10.1063/1.1739521

Jansen2004commentFinal published version, 31.8 KB

Cite this

@article{7db40d688edd4d809be880073df312d4,

title = "Comment on ''Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers'' [Appl. Phys. Lett. 83, 951 (2003)]",

abstract = "In a recent letter,1 it was reported that a magnetic tunnel transistor ~MTT! with a spin-valve base can exhibit high magnetocurrent ~MC! as well as output collector current in the microampere regime. While the presented experimental results are sound and unambiguous, the comparison with the spin-valve transistor ~SVT! is not. In this comment, we wish to address this by separately comparing the output current, transfer ratio, and MC of both devices.",

keywords = "SMI-NE: From 2006 in EWI-NE",

author = "R. Jansen and {van 't Erve}, O.M.J. and F.M. Postma and J.C. Lodder",

year = "2004",

doi = "10.1063/1.1739521",

language = "English",

volume = "84",

pages = "4337--4338",

journal = "Applied physics letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Comment on ''Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers'' [Appl. Phys. Lett. 83, 951 (2003)]

AU - Jansen, R.

AU - van 't Erve, O.M.J.

AU - Postma, F.M.

AU - Lodder, J.C.

PY - 2004

Y1 - 2004

N2 - In a recent letter,1 it was reported that a magnetic tunnel transistor ~MTT! with a spin-valve base can exhibit high magnetocurrent ~MC! as well as output collector current in the microampere regime. While the presented experimental results are sound and unambiguous, the comparison with the spin-valve transistor ~SVT! is not. In this comment, we wish to address this by separately comparing the output current, transfer ratio, and MC of both devices.

AB - In a recent letter,1 it was reported that a magnetic tunnel transistor ~MTT! with a spin-valve base can exhibit high magnetocurrent ~MC! as well as output collector current in the microampere regime. While the presented experimental results are sound and unambiguous, the comparison with the spin-valve transistor ~SVT! is not. In this comment, we wish to address this by separately comparing the output current, transfer ratio, and MC of both devices.

KW - SMI-NE: From 2006 in EWI-NE

U2 - 10.1063/1.1739521

DO - 10.1063/1.1739521

M3 - Article

SN - 0003-6951

VL - 84

SP - 4337

EP - 4338

JO - Applied physics letters

JF - Applied physics letters

IS - 21

ER -

Comment on ''Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers'' [Appl. Phys. Lett. 83, 951 (2003)]

Abstract

Keywords

Access to Document

Fingerprint

Cite this