Comment on ''Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers'' [Appl. Phys. Lett. 83, 951 (2003)]

R. Jansen, O.M.J. van 't Erve, F.M. Postma, J.C. Lodder

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    Abstract

    In a recent letter,1 it was reported that a magnetic tunnel transistor ~MTT! with a spin-valve base can exhibit high magnetocurrent ~MC! as well as output collector current in the microampere regime. While the presented experimental results are sound and unambiguous, the comparison with the spin-valve transistor ~SVT! is not. In this comment, we wish to address this by separately comparing the output current, transfer ratio, and MC of both devices.
    Original languageEnglish
    Pages (from-to)4337-4338
    Number of pages2
    JournalApplied physics letters
    Volume84
    Issue number21
    DOIs
    Publication statusPublished - 2004

    Keywords

    • SMI-NE: From 2006 in EWI-NE

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