Comparative study of piezoelectric response and energy-storage performance in normal ferroelectric, antiferroelectric and relaxor-ferroelectric thin films

Minh D. Nguyen*, Guus Rijnders

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)
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Abstract

The energy-storage performance and piezoelectric properties were determined for epitaxial antiferroelectric (AFE) PbZrO3 (PZ), ferroelectric (FE) PbZr0.52Ti0.48O3 (PZT), and relaxor ferroelectric (RFE) Pb0.9La0.1Zr0.52Ti0.48O3 (PLZT) thin films that were deposited on to SrTiO3 buffered Si substrates. The films were investigated by directly measuring the polarization hysteresis loops and piezoelectric strain curves. The square polarization loop with a high remanent polarization and a large piezoelectric coefficient obtained in PZT thin films allow them to be useful for various applications in ferroelectric field effect transistors and/or in MEMS actuators. Meanwhile, there is a jump of about 0.9% in the strain curve of PZ thin films around the field-induced AFE-FE phase transition, which is useful in digital displacement transducers due to a good ON/OFF strain state. The large recoverable energy-storage density, excellent energy-storage efficiency, and low strain hysteresis due to a slim hysteresis loop combine to make PLZT thin films as a potential candidate for a broad range of applications from energy storage to nano-positioning precision systems.

Original languageEnglish
Article number137843
Number of pages7
JournalThin solid films
Volume697
DOIs
Publication statusPublished - 1 Mar 2020

Keywords

  • Breakdown electric-field
  • Energy-storage performance
  • Piezoelectric strain
  • Thin film

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