Abstract
-A 2-diode test structure is proposed and investigated for use with simple I-V measurements, giving an easy-to-process, fast turn-around-time method of comparing process-dependent current flows when developing ultrashallowl Schottky junction technologies. Differential diode current characteristics and collector currents obtained from lateral transistor operation of the same 2-diode test structure are used to reliably identify the diode type and variations in metal-Si interfacial properties, independent of parasitic leakage currents. The versatility of this method with respect to diode geometry and substrate doping is verified for the measurement of junction- and Schottky-like diodes formed by different chemical-vapor-deposition processes.
Original language | Undefined |
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Title of host publication | Microelectronic Test Structures (ICMTS), 2016 International Conference on |
Place of Publication | New York |
Publisher | IEEE |
Pages | 190-195 |
Number of pages | 6 |
ISBN (Print) | 978-1-4673-8791-0 |
DOIs | |
Publication status | Published - 28 Mar 2016 |
Event | 29th International Conference on Microelectronic Test Structures, ICMTS 2016 - Mielparque Yokohama, Yokohama, Japan Duration: 28 Mar 2016 → 31 Mar 2016 Conference number: 29 |
Publication series
Name | |
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Publisher | IEEE |
Conference
Conference | 29th International Conference on Microelectronic Test Structures, ICMTS 2016 |
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Abbreviated title | ICMTS |
Country | Japan |
City | Yokohama |
Period | 28/03/16 → 31/03/16 |
Keywords
- phosphorus
- current-voltage characteristics
- junction diodes
- lateral bipolar transistor operation
- boron
- Schottky diodes
- arsenic
- Chemical vapor deposition
- METIS-321698
- IR-103284
- EWI-27686