Comparing current flows in ultrashallow pn-/Schottky-like diodes with 2-diode test method

Xingyu Liu, Lis Karen Nanver

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    1 Citation (Scopus)
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    Abstract

    -A 2-diode test structure is proposed and investigated for use with simple I-V measurements, giving an easy-to-process, fast turn-around-time method of comparing process-dependent current flows when developing ultrashallowl Schottky junction technologies. Differential diode current characteristics and collector currents obtained from lateral transistor operation of the same 2-diode test structure are used to reliably identify the diode type and variations in metal-Si interfacial properties, independent of parasitic leakage currents. The versatility of this method with respect to diode geometry and substrate doping is verified for the measurement of junction- and Schottky-like diodes formed by different chemical-vapor-deposition processes.
    Original languageUndefined
    Title of host publicationMicroelectronic Test Structures (ICMTS), 2016 International Conference on
    Place of PublicationNew York
    PublisherIEEE
    Pages190-195
    Number of pages6
    ISBN (Print)978-1-4673-8791-0
    DOIs
    Publication statusPublished - 28 Mar 2016
    Event29th International Conference on Microelectronic Test Structures, ICMTS 2016 - Mielparque Yokohama, Yokohama, Japan
    Duration: 28 Mar 201631 Mar 2016
    Conference number: 29

    Publication series

    Name
    PublisherIEEE

    Conference

    Conference29th International Conference on Microelectronic Test Structures, ICMTS 2016
    Abbreviated titleICMTS
    CountryJapan
    CityYokohama
    Period28/03/1631/03/16

    Keywords

    • phosphorus
    • current-voltage characteristics
    • junction diodes
    • lateral bipolar transistor operation
    • boron
    • Schottky diodes
    • arsenic
    • Chemical vapor deposition
    • METIS-321698
    • IR-103284
    • EWI-27686

    Cite this

    Liu, X., & Nanver, L. K. (2016). Comparing current flows in ultrashallow pn-/Schottky-like diodes with 2-diode test method. In Microelectronic Test Structures (ICMTS), 2016 International Conference on (pp. 190-195). New York: IEEE. https://doi.org/10.1109/ICMTS.2016.7476205