Comparing current flows in ultrashallow pn-/Schottky-like diodes with 2-diode test method

Xingyu Liu; Lis Karen Nanver

doi:10.1109/ICMTS.2016.7476205

Comparing current flows in ultrashallow pn-/Schottky-like diodes with 2-diode test method

Xingyu Liu, Lis Karen Nanver

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

1 Downloads (Pure)

Abstract

-A 2-diode test structure is proposed and investigated for use with simple I-V measurements, giving an easy-to-process, fast turn-around-time method of comparing process-dependent current flows when developing ultrashallowl Schottky junction technologies. Differential diode current characteristics and collector currents obtained from lateral transistor operation of the same 2-diode test structure are used to reliably identify the diode type and variations in metal-Si interfacial properties, independent of parasitic leakage currents. The versatility of this method with respect to diode geometry and substrate doping is verified for the measurement of junction- and Schottky-like diodes formed by different chemical-vapor-deposition processes.

Original language	Undefined
Title of host publication	Microelectronic Test Structures (ICMTS), 2016 International Conference on
Place of Publication	New York
Publisher	IEEE
Pages	190-195
Number of pages	6
ISBN (Print)	978-1-4673-8791-0
DOIs	https://doi.org/10.1109/ICMTS.2016.7476205
Publication status	Published - 28 Mar 2016
Event	29th International Conference on Microelectronic Test Structures, ICMTS 2016 - Mielparque Yokohama, Yokohama, Japan Duration: 28 Mar 2016 → 31 Mar 2016 Conference number: 29

Publication series

Name
Publisher	IEEE

Conference

Conference	29th International Conference on Microelectronic Test Structures, ICMTS 2016
Abbreviated title	ICMTS
Country	Japan
City	Yokohama
Period	28/03/16 → 31/03/16

Keywords

phosphorus
current-voltage characteristics
junction diodes
lateral bipolar transistor operation
boron
Schottky diodes
arsenic
Chemical vapor deposition
METIS-321698
IR-103284
EWI-27686

Access to Document

10.1109/ICMTS.2016.7476205

Cite this

@inproceedings{4d5c3b80bd314db79d47eb7719358c2f,

title = "Comparing current flows in ultrashallow pn-/Schottky-like diodes with 2-diode test method",

abstract = "-A 2-diode test structure is proposed and investigated for use with simple I-V measurements, giving an easy-to-process, fast turn-around-time method of comparing process-dependent current flows when developing ultrashallowl Schottky junction technologies. Differential diode current characteristics and collector currents obtained from lateral transistor operation of the same 2-diode test structure are used to reliably identify the diode type and variations in metal-Si interfacial properties, independent of parasitic leakage currents. The versatility of this method with respect to diode geometry and substrate doping is verified for the measurement of junction- and Schottky-like diodes formed by different chemical-vapor-deposition processes.",

keywords = "phosphorus, current-voltage characteristics, junction diodes, lateral bipolar transistor operation, boron, Schottky diodes, arsenic, Chemical vapor deposition, METIS-321698, IR-103284, EWI-27686",

author = "Xingyu Liu and Nanver, {Lis Karen}",

note = "10.1109/ICMTS.2016.7476205 ; null ; Conference date: 28-03-2016 Through 31-03-2016",

year = "2016",

month = mar,

day = "28",

doi = "10.1109/ICMTS.2016.7476205",

language = "Undefined",

isbn = "978-1-4673-8791-0",

publisher = "IEEE",

pages = "190--195",

booktitle = "Microelectronic Test Structures (ICMTS), 2016 International Conference on",

address = "United States",

}

Liu, X & Nanver, LK 2016, Comparing current flows in ultrashallow pn-/Schottky-like diodes with 2-diode test method. in Microelectronic Test Structures (ICMTS), 2016 International Conference on. IEEE, New York, pp. 190-195, 29th International Conference on Microelectronic Test Structures, ICMTS 2016, Yokohama, Japan, 28/03/16. https://doi.org/10.1109/ICMTS.2016.7476205

TY - GEN

T1 - Comparing current flows in ultrashallow pn-/Schottky-like diodes with 2-diode test method

AU - Liu, Xingyu

AU - Nanver, Lis Karen

N1 - Conference code: 29

PY - 2016/3/28

Y1 - 2016/3/28

N2 - -A 2-diode test structure is proposed and investigated for use with simple I-V measurements, giving an easy-to-process, fast turn-around-time method of comparing process-dependent current flows when developing ultrashallowl Schottky junction technologies. Differential diode current characteristics and collector currents obtained from lateral transistor operation of the same 2-diode test structure are used to reliably identify the diode type and variations in metal-Si interfacial properties, independent of parasitic leakage currents. The versatility of this method with respect to diode geometry and substrate doping is verified for the measurement of junction- and Schottky-like diodes formed by different chemical-vapor-deposition processes.

AB - -A 2-diode test structure is proposed and investigated for use with simple I-V measurements, giving an easy-to-process, fast turn-around-time method of comparing process-dependent current flows when developing ultrashallowl Schottky junction technologies. Differential diode current characteristics and collector currents obtained from lateral transistor operation of the same 2-diode test structure are used to reliably identify the diode type and variations in metal-Si interfacial properties, independent of parasitic leakage currents. The versatility of this method with respect to diode geometry and substrate doping is verified for the measurement of junction- and Schottky-like diodes formed by different chemical-vapor-deposition processes.

KW - phosphorus

KW - current-voltage characteristics

KW - junction diodes

KW - lateral bipolar transistor operation

KW - boron

KW - Schottky diodes

KW - arsenic

KW - Chemical vapor deposition

KW - METIS-321698

KW - IR-103284

KW - EWI-27686

U2 - 10.1109/ICMTS.2016.7476205

DO - 10.1109/ICMTS.2016.7476205

M3 - Conference contribution

SN - 978-1-4673-8791-0

SP - 190

EP - 195

BT - Microelectronic Test Structures (ICMTS), 2016 International Conference on

PB - IEEE

CY - New York

Y2 - 28 March 2016 through 31 March 2016

ER -