TY - JOUR
T1 - Comparing the weak and strong gate-coupling regimes for nanotube and graphene transistors
AU - Heller, I.
AU - Chatoor, S.
AU - Männik, J.
AU - Zevenbergen, M. A.G.
AU - Dekker, C.
AU - Lemay, S. G.
PY - 2009/12/9
Y1 - 2009/12/9
N2 - We present an experimental and theoretical comparison of the weak and strong gate-coupling regimes that arise for carbon nanotube (CNT) and graphene field-effect transistors (FETs) in back-gated and liquid-gated configuration, respectively. We find that whereas the back-gate efficiency is suppressed for a liquid-gated CNT FET, the back gate is still effective in case of a liquid-gated graphene FET. We calculate the gateinduced Fermi-level shifts and induced charge densities. In both strong and weak coupling regimes, nonlinearities occur in the gate dependence of these parameters, which can significantly influence the electronic transport.
AB - We present an experimental and theoretical comparison of the weak and strong gate-coupling regimes that arise for carbon nanotube (CNT) and graphene field-effect transistors (FETs) in back-gated and liquid-gated configuration, respectively. We find that whereas the back-gate efficiency is suppressed for a liquid-gated CNT FET, the back gate is still effective in case of a liquid-gated graphene FET. We calculate the gateinduced Fermi-level shifts and induced charge densities. In both strong and weak coupling regimes, nonlinearities occur in the gate dependence of these parameters, which can significantly influence the electronic transport.
UR - http://www.scopus.com/inward/record.url?scp=71149111873&partnerID=8YFLogxK
U2 - 10.1002/pssr.200903157
DO - 10.1002/pssr.200903157
M3 - Article
AN - SCOPUS:71149111873
SN - 1862-6254
VL - 3
SP - 190
EP - 192
JO - Physica status solidi. Rapid research letters
JF - Physica status solidi. Rapid research letters
IS - 6
ER -