Comparing the weak and strong gate-coupling regimes for nanotube and graphene transistors

I. Heller, S. Chatoor, J. Männik, M. A.G. Zevenbergen, C. Dekker, S. G. Lemay

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)

Abstract

We present an experimental and theoretical comparison of the weak and strong gate-coupling regimes that arise for carbon nanotube (CNT) and graphene field-effect transistors (FETs) in back-gated and liquid-gated configuration, respectively. We find that whereas the back-gate efficiency is suppressed for a liquid-gated CNT FET, the back gate is still effective in case of a liquid-gated graphene FET. We calculate the gateinduced Fermi-level shifts and induced charge densities. In both strong and weak coupling regimes, nonlinearities occur in the gate dependence of these parameters, which can significantly influence the electronic transport.

Original languageEnglish
Pages (from-to)190-192
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Volume3
Issue number6
DOIs
Publication statusPublished - 9 Dec 2009
Externally publishedYes

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