Abstract
The applicability of several capacitance-voltage measurement methods is investigated for the on-wafer characterization of RF-MEMS capacitive switches. These devices combine few-picofarad capacitance with a high quality factor. The standard quasistatic and high-frequency measurements are employed, as well as the recently introduced very-low-frequency method. S11 is measured by a network analyzer to calculate the capacitance of the device from radio-frequency measurements. Significant differences are found around the pull-in and pull-out voltages.
| Original language | English |
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| Title of host publication | IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 |
| Place of Publication | Piscataway, NJ |
| Publisher | IEEE |
| Pages | 53-58 |
| Number of pages | 6 |
| ISBN (Print) | 978-1-4673-4848-5 |
| DOIs | |
| Publication status | Published - 26 Mar 2013 |
| Event | 26th IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Osaka, Japan Duration: 25 Mar 2013 → 28 Mar 2013 Conference number: 26 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog13.html |
Publication series
| Name | IEEE International Conference on Microelectronic Test Structures (ICMTS) |
|---|---|
| Publisher | IEEE Electron Devices Society |
| Volume | 2013 |
| ISSN (Print) | 1071-9032 |
Conference
| Conference | 26th IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 |
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| Abbreviated title | ICMTS |
| Country/Territory | Japan |
| City | Osaka |
| Period | 25/03/13 → 28/03/13 |
| Internet address |
Keywords
- 2023 OA procedure
- Parasitics
- Capacitance
- Measurement
- RF-MEMS switch