Comparison of C-V measurement methods for RF-MEMS capacitive switches

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    4 Citations (Scopus)

    Abstract

    The applicability of several capacitance-voltage measurement methods is investigated for the on-wafer characterization of RF-MEMS capacitive switches. These devices combine few-picofarad capacitance with a high quality factor. The standard quasistatic and high-frequency measurements are employed, as well as the recently introduced very-low-frequency method. S11 is measured by a network analyzer to calculate the capacitance of the device from radio-frequency measurements. Significant differences are found around the pull-in and pull-out voltages.
    Original languageUndefined
    Title of host publicationIEEE International Conference on Microelectronic Test Structures, ICMTS 2013
    Place of PublicationUSA
    PublisherIEEE Electron Devices Society
    Pages53-58
    Number of pages6
    ISBN (Print)978-1-4673-4848-5
    DOIs
    Publication statusPublished - 26 Mar 2013
    Event26th IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Osaka, Japan
    Duration: 25 Mar 201328 Mar 2013
    Conference number: 26
    http://www.homepages.ed.ac.uk/ajw/ICMTS/prog13.html

    Publication series

    Name
    PublisherIEEE Electron Devices Society
    ISSN (Print)1071-9032

    Conference

    Conference26th IEEE International Conference on Microelectronic Test Structures, ICMTS 2013
    Abbreviated titleICMTS
    CountryJapan
    CityOsaka
    Period25/03/1328/03/13
    Internet address

    Keywords

    • RF-MEMS switch
    • parasitics
    • EWI-24329
    • METIS-302655
    • Capacitance
    • Measurement
    • IR-88885

    Cite this

    Wang, J., Salm, C., & Schmitz, J. (2013). Comparison of C-V measurement methods for RF-MEMS capacitive switches. In IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 (pp. 53-58). USA: IEEE Electron Devices Society. https://doi.org/10.1109/ICMTS.2013.6528145