Comparison of C-V measurement methods for RF-MEMS capacitive switches

J. Wang; Cora Salm; Jurriaan Schmitz

doi:10.1109/ICMTS.2013.6528145

Comparison of C-V measurement methods for RF-MEMS capacitive switches

J. Wang, Cora Salm, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

Abstract

The applicability of several capacitance-voltage measurement methods is investigated for the on-wafer characterization of RF-MEMS capacitive switches. These devices combine few-picofarad capacitance with a high quality factor. The standard quasistatic and high-frequency measurements are employed, as well as the recently introduced very-low-frequency method. S11 is measured by a network analyzer to calculate the capacitance of the device from radio-frequency measurements. Significant differences are found around the pull-in and pull-out voltages.

Original language	Undefined
Title of host publication	IEEE International Conference on Microelectronic Test Structures, ICMTS 2013
Place of Publication	USA
Publisher	IEEE Electron Devices Society
Pages	53-58
Number of pages	6
ISBN (Print)	978-1-4673-4848-5
DOIs	https://doi.org/10.1109/ICMTS.2013.6528145
Publication status	Published - 26 Mar 2013
Event	26th IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Osaka, Japan Duration: 25 Mar 2013 → 28 Mar 2013 Conference number: 26 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog13.html

Publication series

Name
Publisher	IEEE Electron Devices Society
ISSN (Print)	1071-9032

Conference

Conference	26th IEEE International Conference on Microelectronic Test Structures, ICMTS 2013
Abbreviated title	ICMTS
Country/Territory	Japan
City	Osaka
Period	25/03/13 → 28/03/13
Internet address	http://www.homepages.ed.ac.uk/ajw/ICMTS/prog13.html

Keywords

RF-MEMS switch
parasitics
EWI-24329
METIS-302655
Capacitance
Measurement
IR-88885

Access to Document

10.1109/ICMTS.2013.6528145

http://eprints.eemcs.utwente.nl/secure2/24329/01/wang_icmts.pdf

Cite this

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title = "Comparison of C-V measurement methods for RF-MEMS capacitive switches",

abstract = "The applicability of several capacitance-voltage measurement methods is investigated for the on-wafer characterization of RF-MEMS capacitive switches. These devices combine few-picofarad capacitance with a high quality factor. The standard quasistatic and high-frequency measurements are employed, as well as the recently introduced very-low-frequency method. S11 is measured by a network analyzer to calculate the capacitance of the device from radio-frequency measurements. Significant differences are found around the pull-in and pull-out voltages.",

keywords = "RF-MEMS switch, parasitics, EWI-24329, METIS-302655, Capacitance, Measurement, IR-88885",

author = "J. Wang and Cora Salm and Jurriaan Schmitz",

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Wang, J, Salm, C & Schmitz, J 2013, Comparison of C-V measurement methods for RF-MEMS capacitive switches. in IEEE International Conference on Microelectronic Test Structures, ICMTS 2013. IEEE Electron Devices Society, USA, pp. 53-58, 26th IEEE International Conference on Microelectronic Test Structures, ICMTS 2013, Osaka, Japan, 25/03/13. https://doi.org/10.1109/ICMTS.2013.6528145

TY - GEN

T1 - Comparison of C-V measurement methods for RF-MEMS capacitive switches

AU - Wang, J.

AU - Salm, Cora

AU - Schmitz, Jurriaan

N1 - Conference code: 26

PY - 2013/3/26

Y1 - 2013/3/26

N2 - The applicability of several capacitance-voltage measurement methods is investigated for the on-wafer characterization of RF-MEMS capacitive switches. These devices combine few-picofarad capacitance with a high quality factor. The standard quasistatic and high-frequency measurements are employed, as well as the recently introduced very-low-frequency method. S11 is measured by a network analyzer to calculate the capacitance of the device from radio-frequency measurements. Significant differences are found around the pull-in and pull-out voltages.

AB - The applicability of several capacitance-voltage measurement methods is investigated for the on-wafer characterization of RF-MEMS capacitive switches. These devices combine few-picofarad capacitance with a high quality factor. The standard quasistatic and high-frequency measurements are employed, as well as the recently introduced very-low-frequency method. S11 is measured by a network analyzer to calculate the capacitance of the device from radio-frequency measurements. Significant differences are found around the pull-in and pull-out voltages.

KW - RF-MEMS switch

KW - parasitics

KW - EWI-24329

KW - METIS-302655

KW - Capacitance

KW - Measurement

KW - IR-88885

U2 - 10.1109/ICMTS.2013.6528145

DO - 10.1109/ICMTS.2013.6528145

M3 - Conference contribution

SN - 978-1-4673-4848-5

SP - 53

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BT - IEEE International Conference on Microelectronic Test Structures, ICMTS 2013

PB - IEEE Electron Devices Society

CY - USA

Y2 - 25 March 2013 through 28 March 2013

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