Comparison of C-V measurement methods for RF-MEMS capacitive switches

Jiahui Wang; Cora Salm; Jurriaan Schmitz

doi:10.1109/ICMTS.2013.6528145

Comparison of C-V measurement methods for RF-MEMS capacitive switches

Jiahui Wang
, Cora Salm
, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

126 Downloads (Pure)

Abstract

The applicability of several capacitance-voltage measurement methods is investigated for the on-wafer characterization of RF-MEMS capacitive switches. These devices combine few-picofarad capacitance with a high quality factor. The standard quasistatic and high-frequency measurements are employed, as well as the recently introduced very-low-frequency method. S11 is measured by a network analyzer to calculate the capacitance of the device from radio-frequency measurements. Significant differences are found around the pull-in and pull-out voltages.

Original language	English
Title of host publication	IEEE International Conference on Microelectronic Test Structures, ICMTS 2013
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	53-58
Number of pages	6
ISBN (Print)	978-1-4673-4848-5
DOIs	https://doi.org/10.1109/ICMTS.2013.6528145
Publication status	Published - 26 Mar 2013
Event	26th IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Osaka, Japan Duration: 25 Mar 2013 → 28 Mar 2013 Conference number: 26 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog13.html

Publication series

Name	IEEE International Conference on Microelectronic Test Structures (ICMTS)
Publisher	IEEE Electron Devices Society
Volume	2013
ISSN (Print)	1071-9032

Conference

Conference	26th IEEE International Conference on Microelectronic Test Structures, ICMTS 2013
Abbreviated title	ICMTS
Country/Territory	Japan
City	Osaka
Period	25/03/13 → 28/03/13
Internet address	http://www.homepages.ed.ac.uk/ajw/ICMTS/prog13.html

Keywords

2023 OA procedure
Parasitics
Capacitance
Measurement
RF-MEMS switch

Access to Document

10.1109/ICMTS.2013.6528145

ArticleFinal published version, 348 KBLicence: Taverne

Cite this

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title = "Comparison of C-V measurement methods for RF-MEMS capacitive switches",

abstract = "The applicability of several capacitance-voltage measurement methods is investigated for the on-wafer characterization of RF-MEMS capacitive switches. These devices combine few-picofarad capacitance with a high quality factor. The standard quasistatic and high-frequency measurements are employed, as well as the recently introduced very-low-frequency method. S11 is measured by a network analyzer to calculate the capacitance of the device from radio-frequency measurements. Significant differences are found around the pull-in and pull-out voltages.",

keywords = "2023 OA procedure, Parasitics, Capacitance, Measurement, RF-MEMS switch",

author = "Jiahui Wang and Cora Salm and Jurriaan Schmitz",

year = "2013",

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doi = "10.1109/ICMTS.2013.6528145",

language = "English",

isbn = "978-1-4673-4848-5",

series = "IEEE International Conference on Microelectronic Test Structures (ICMTS)",

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booktitle = "IEEE International Conference on Microelectronic Test Structures, ICMTS 2013",

address = "United States",

note = "26th IEEE International Conference on Microelectronic Test Structures, ICMTS 2013, ICMTS ; Conference date: 25-03-2013 Through 28-03-2013",

url = "http://www.homepages.ed.ac.uk/ajw/ICMTS/prog13.html",

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Wang, J, Salm, C & Schmitz, J 2013, Comparison of C-V measurement methods for RF-MEMS capacitive switches. in IEEE International Conference on Microelectronic Test Structures, ICMTS 2013. IEEE International Conference on Microelectronic Test Structures (ICMTS), vol. 2013, IEEE, Piscataway, NJ, pp. 53-58, 26th IEEE International Conference on Microelectronic Test Structures, ICMTS 2013, Osaka, Japan, 25/03/13. https://doi.org/10.1109/ICMTS.2013.6528145

Comparison of C-V measurement methods for RF-MEMS capacitive switches. / Wang, Jiahui; Salm, Cora ; Schmitz, Jurriaan.
IEEE International Conference on Microelectronic Test Structures, ICMTS 2013. Piscataway, NJ: IEEE, 2013. p. 53-58 (IEEE International Conference on Microelectronic Test Structures (ICMTS); Vol. 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Wang, Jiahui

AU - Salm, Cora

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Y1 - 2013/3/26

N2 - The applicability of several capacitance-voltage measurement methods is investigated for the on-wafer characterization of RF-MEMS capacitive switches. These devices combine few-picofarad capacitance with a high quality factor. The standard quasistatic and high-frequency measurements are employed, as well as the recently introduced very-low-frequency method. S11 is measured by a network analyzer to calculate the capacitance of the device from radio-frequency measurements. Significant differences are found around the pull-in and pull-out voltages.

AB - The applicability of several capacitance-voltage measurement methods is investigated for the on-wafer characterization of RF-MEMS capacitive switches. These devices combine few-picofarad capacitance with a high quality factor. The standard quasistatic and high-frequency measurements are employed, as well as the recently introduced very-low-frequency method. S11 is measured by a network analyzer to calculate the capacitance of the device from radio-frequency measurements. Significant differences are found around the pull-in and pull-out voltages.

KW - 2023 OA procedure

KW - Parasitics

KW - Capacitance

KW - Measurement

KW - RF-MEMS switch

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DO - 10.1109/ICMTS.2013.6528145

M3 - Conference contribution

SN - 978-1-4673-4848-5

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SP - 53

EP - 58

BT - IEEE International Conference on Microelectronic Test Structures, ICMTS 2013

PB - IEEE

CY - Piscataway, NJ

T2 - 26th IEEE International Conference on Microelectronic Test Structures, ICMTS 2013

Y2 - 25 March 2013 through 28 March 2013

ER -

Comparison of C-V measurement methods for RF-MEMS capacitive switches

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Keywords

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