Comparison of carbon cleaning mechanisms in EUV-induced and SWD plasmas in H2 and He environments

A. Dolgov, D. Lopaev, Christopher James Lee, V.M. Krivtsun, K. Koshelev, O. Yakushev, Frederik Bijkerk

Research output: Contribution to conferencePosterOther research output

Abstract

Optics contamination with amorphous carbon (a-C) remains one of the challenges in extreme ultraviolet (EUV) lithography. Processes of a-C removing from Si surface under two kinds of plasma influence in two different gas environments were studied. Carbon-cleaning mechanisms in H2 and He environment were studied with the help of two different experimental setups. Cleaning efficiency in two types of experiments (EUV-induced plasma vs surface wave discharge (SWD) plasma) in two different gases (H2 vs He) were estimated. It was observed, that cleaning efficiency for He in both plasmas are close (sputtering) but cleaning efficiency for H2 in EUV plasma few times higher then in SWD plasma. The supposed explanation can be connected with activation of a surface by EUV photons due to that hydrogen can be absorbed and interacts with it more effectively. For those reason the C cleaning mechanism in EUV-induced plasma could be characterized as a new mechanism and named «EUV-reactive ion etching.
Original languageEnglish
Pages-
Publication statusPublished - 22 Jan 2013
EventPhysics@FOM Veldhoven 2013 - NH Koningshof, Veldhoven, Netherlands
Duration: 22 Jan 201323 Jan 2013
https://www.nwo-i.nl/agenda/physicsatveldhoven/archives/

Conference

ConferencePhysics@FOM Veldhoven 2013
CountryNetherlands
CityVeldhoven
Period22/01/1323/01/13
Internet address

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plasma jets
cleaning
surface waves
carbon
gases
contamination
lithography
sputtering
etching
activation
optics
photons
hydrogen
ions

Keywords

  • METIS-299660

Cite this

Dolgov, A., Lopaev, D., Lee, C. J., Krivtsun, V. M., Koshelev, K., Yakushev, O., & Bijkerk, F. (2013). Comparison of carbon cleaning mechanisms in EUV-induced and SWD plasmas in H2 and He environments. -. Poster session presented at Physics@FOM Veldhoven 2013, Veldhoven, Netherlands.
Dolgov, A. ; Lopaev, D. ; Lee, Christopher James ; Krivtsun, V.M. ; Koshelev, K. ; Yakushev, O. ; Bijkerk, Frederik. / Comparison of carbon cleaning mechanisms in EUV-induced and SWD plasmas in H2 and He environments. Poster session presented at Physics@FOM Veldhoven 2013, Veldhoven, Netherlands.
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abstract = "Optics contamination with amorphous carbon (a-C) remains one of the challenges in extreme ultraviolet (EUV) lithography. Processes of a-C removing from Si surface under two kinds of plasma influence in two different gas environments were studied. Carbon-cleaning mechanisms in H2 and He environment were studied with the help of two different experimental setups. Cleaning efficiency in two types of experiments (EUV-induced plasma vs surface wave discharge (SWD) plasma) in two different gases (H2 vs He) were estimated. It was observed, that cleaning efficiency for He in both plasmas are close (sputtering) but cleaning efficiency for H2 in EUV plasma few times higher then in SWD plasma. The supposed explanation can be connected with activation of a surface by EUV photons due to that hydrogen can be absorbed and interacts with it more effectively. For those reason the C cleaning mechanism in EUV-induced plasma could be characterized as a new mechanism and named «EUV-reactive ion etching.",
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Dolgov, A, Lopaev, D, Lee, CJ, Krivtsun, VM, Koshelev, K, Yakushev, O & Bijkerk, F 2013, 'Comparison of carbon cleaning mechanisms in EUV-induced and SWD plasmas in H2 and He environments' Physics@FOM Veldhoven 2013, Veldhoven, Netherlands, 22/01/13 - 23/01/13, pp. -.

Comparison of carbon cleaning mechanisms in EUV-induced and SWD plasmas in H2 and He environments. / Dolgov, A.; Lopaev, D.; Lee, Christopher James; Krivtsun, V.M.; Koshelev, K.; Yakushev, O.; Bijkerk, Frederik.

2013. - Poster session presented at Physics@FOM Veldhoven 2013, Veldhoven, Netherlands.

Research output: Contribution to conferencePosterOther research output

TY - CONF

T1 - Comparison of carbon cleaning mechanisms in EUV-induced and SWD plasmas in H2 and He environments

AU - Dolgov, A.

AU - Lopaev, D.

AU - Lee, Christopher James

AU - Krivtsun, V.M.

AU - Koshelev, K.

AU - Yakushev, O.

AU - Bijkerk, Frederik

PY - 2013/1/22

Y1 - 2013/1/22

N2 - Optics contamination with amorphous carbon (a-C) remains one of the challenges in extreme ultraviolet (EUV) lithography. Processes of a-C removing from Si surface under two kinds of plasma influence in two different gas environments were studied. Carbon-cleaning mechanisms in H2 and He environment were studied with the help of two different experimental setups. Cleaning efficiency in two types of experiments (EUV-induced plasma vs surface wave discharge (SWD) plasma) in two different gases (H2 vs He) were estimated. It was observed, that cleaning efficiency for He in both plasmas are close (sputtering) but cleaning efficiency for H2 in EUV plasma few times higher then in SWD plasma. The supposed explanation can be connected with activation of a surface by EUV photons due to that hydrogen can be absorbed and interacts with it more effectively. For those reason the C cleaning mechanism in EUV-induced plasma could be characterized as a new mechanism and named «EUV-reactive ion etching.

AB - Optics contamination with amorphous carbon (a-C) remains one of the challenges in extreme ultraviolet (EUV) lithography. Processes of a-C removing from Si surface under two kinds of plasma influence in two different gas environments were studied. Carbon-cleaning mechanisms in H2 and He environment were studied with the help of two different experimental setups. Cleaning efficiency in two types of experiments (EUV-induced plasma vs surface wave discharge (SWD) plasma) in two different gases (H2 vs He) were estimated. It was observed, that cleaning efficiency for He in both plasmas are close (sputtering) but cleaning efficiency for H2 in EUV plasma few times higher then in SWD plasma. The supposed explanation can be connected with activation of a surface by EUV photons due to that hydrogen can be absorbed and interacts with it more effectively. For those reason the C cleaning mechanism in EUV-induced plasma could be characterized as a new mechanism and named «EUV-reactive ion etching.

KW - METIS-299660

M3 - Poster

SP - -

ER -

Dolgov A, Lopaev D, Lee CJ, Krivtsun VM, Koshelev K, Yakushev O et al. Comparison of carbon cleaning mechanisms in EUV-induced and SWD plasmas in H2 and He environments. 2013. Poster session presented at Physics@FOM Veldhoven 2013, Veldhoven, Netherlands.