Abstract
Three electrical techniques (pulsed-gate, ACconductance and sense-diode) for temperature evaluation in power MOS transistors have been experimentally compared on the same device. The device under test is a silicon-oninsulator (SOI) laterally-diffused MOSFET (LDMOS) design with embedded sense-diodes in the center and at the edge of the device for providing local temperature information. Onwafer
measurements have been performed on a thermal chuck in the temperature range 25 − 200◦C to extract self-heating information and predict the junction temperature for different biasing conditions. Good agreement (within 10%) between the different techniques is achieved, evidencing that reliable temperature estimations can be made using each of the proposed electrical techniques. As a result, factors other than experimental accuracy will play a role in the choice of the most adequate technique for the application of interest. Guidelines for this choice are provided in a benchmarking analysis accounting for ease of application, temperature calibration and accuracy of the results.
Original language | English |
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Title of host publication | IEEE International Conference on Microelectronic Test Structures (ICMTS 2013) |
Place of Publication | USA |
Publisher | IEEE |
Pages | 115-120 |
Number of pages | 6 |
ISBN (Print) | 978-1-4673-4848-5 |
DOIs | |
Publication status | Published - 26 Mar 2013 |
Event | 26th IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Osaka, Japan Duration: 25 Mar 2013 → 28 Mar 2013 Conference number: 26 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog13.html |
Publication series
Name | |
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Publisher | IEEE |
ISSN (Print) | 1071-9032 |
Conference
Conference | 26th IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 |
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Abbreviated title | ICMTS |
Country | Japan |
City | Osaka |
Period | 25/03/13 → 28/03/13 |
Internet address |
Keywords
- EWI-24307
- AC-conductance
- thermal resistance
- sense-diode
- METIS-302642
- METIS-297985
- pulsed-gate
- Temperature
- self-heating
- IR-87590
- power MOS