Comparison of electrical techniques for temperature evaluation in power MOS transistors

A. Ferrara, P.G. Steeneken, K. Reimann, A. Heringa, L. Yan, B.K. Boksteen, M. Swanenberg, G.E.J. Koops, A.J. Scholten, R. Surdeanu, Jurriaan Schmitz, Raymond Josephus Engelbart Hueting

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    5 Citations (Scopus)

    Abstract

    Three electrical techniques (pulsed-gate, ACconductance and sense-diode) for temperature evaluation in power MOS transistors have been experimentally compared on the same device. The device under test is a silicon-oninsulator (SOI) laterally-diffused MOSFET (LDMOS) design with embedded sense-diodes in the center and at the edge of the device for providing local temperature information. Onwafer measurements have been performed on a thermal chuck in the temperature range 25 − 200◦C to extract self-heating information and predict the junction temperature for different biasing conditions. Good agreement (within 10%) between the different techniques is achieved, evidencing that reliable temperature estimations can be made using each of the proposed electrical techniques. As a result, factors other than experimental accuracy will play a role in the choice of the most adequate technique for the application of interest. Guidelines for this choice are provided in a benchmarking analysis accounting for ease of application, temperature calibration and accuracy of the results.
    Original languageEnglish
    Title of host publicationIEEE International Conference on Microelectronic Test Structures (ICMTS 2013)
    Place of PublicationUSA
    PublisherIEEE
    Pages115-120
    Number of pages6
    ISBN (Print)978-1-4673-4848-5
    DOIs
    Publication statusPublished - 26 Mar 2013
    Event26th IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Osaka, Japan
    Duration: 25 Mar 201328 Mar 2013
    Conference number: 26
    http://www.homepages.ed.ac.uk/ajw/ICMTS/prog13.html

    Publication series

    Name
    PublisherIEEE
    ISSN (Print)1071-9032

    Conference

    Conference26th IEEE International Conference on Microelectronic Test Structures, ICMTS 2013
    Abbreviated titleICMTS
    CountryJapan
    CityOsaka
    Period25/03/1328/03/13
    Internet address

    Keywords

    • EWI-24307
    • AC-conductance
    • thermal resistance
    • sense-diode
    • METIS-302642
    • METIS-297985
    • pulsed-gate
    • Temperature
    • self-heating
    • IR-87590
    • power MOS

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  • Cite this

    Ferrara, A., Steeneken, P. G., Reimann, K., Heringa, A., Yan, L., Boksteen, B. K., ... Hueting, R. J. E. (2013). Comparison of electrical techniques for temperature evaluation in power MOS transistors. In IEEE International Conference on Microelectronic Test Structures (ICMTS 2013) (pp. 115-120). USA: IEEE. https://doi.org/10.1109/ICMTS.2013.6528156