Comparison of Gate Currents and Oxide Reliability of 5.6 nm Thick Gate-oxides Using BF2+ Doped Poly-Si and Poly-Ge0.3Si0.7 Gate Material

Cora Salm, J.H. Klootwijk, V.E. Houtsma, Y.V. Ponomarev, P.H. Woerlee

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings of SAFE'98
    Place of PublicationMierlo
    Number of pages4
    Publication statusPublished - 26 Nov 1998


    • METIS-113837

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