Comparison of Gate Currents and Oxide Reliability of 5.6 nm Thick Gate-oxides Using BF2+ Doped Poly-Si and Poly-Ge0.3Si0.7 Gate Material

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Keywords

@inproceedings{1d8d407475de4749a22c9ea4d8810027,

title = "Comparison of Gate Currents and Oxide Reliability of 5.6 nm Thick Gate-oxides Using BF2+ Doped Poly-Si and Poly-Ge0.3Si0.7 Gate Material",

keywords = "METIS-113837",

author = "Cora Salm and J.H. Klootwijk and V.E. Houtsma and Y.V. Ponomarev and P.H. Woerlee",

year = "1998",

month = nov,

day = "26",

language = "Undefined",

isbn = "90-73461-15-4",

pages = "473--476",

booktitle = "Proceedings of SAFE'98",

}

TY - GEN

T1 - Comparison of Gate Currents and Oxide Reliability of 5.6 nm Thick Gate-oxides Using BF2+ Doped Poly-Si and Poly-Ge0.3Si0.7 Gate Material

AU - Salm, Cora

AU - Klootwijk, J.H.

AU - Houtsma, V.E.

AU - Ponomarev, Y.V.

AU - Woerlee, P.H.

PY - 1998/11/26

Y1 - 1998/11/26

KW - METIS-113837

M3 - Conference contribution

SN - 90-73461-15-4

SP - 473

EP - 476

BT - Proceedings of SAFE'98

CY - Mierlo

ER -