Comparison of H2O and D2O oxidation kinetics of <100> silicon

A.J. Hof; A. Kovalgin; P.H. Woerlee

Comparison of H₂O and D₂O oxidation kinetics of <100> silicon

A.J. Hof, A. Kovalgin, P.H. Woerlee

Faculty of Electrical Engineering, Mathematics and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Recent reports indicate that the incorporation of deuterium in the gate oxide of MOS-transistors can improve the integrity of thin gate oxides. The easiest and most direct means to incorporate the deuterium is to grow the gate oxide using heavy water (D2O). In this study the oxidation rate of <100> silicon using H2O and D2O arecompared. The experimental data show that the oxidation rate is lower for D2O. The measured oxidation curves can physically not be fitted with the Deal-Grove model. A power law model seems to be more correct. The difference in oxidation rate of silicon using H2O and D2O might be attributed to a difference in H/D desorption from the silicon interface. This can be an explanation for improved oxide integrity.

Original language	English
Title of host publication	Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	35-38
Number of pages	4
ISBN (Print)	90-73461-33-2
Publication status	Published - 27 Nov 2002
Event	5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 - Veldhoven, Netherlands Duration: 27 Nov 2002 → 28 Nov 2002 Conference number: 5

Workshop

Workshop	5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	27/11/02 → 28/11/02

Keywords

Oxidation kinetics
Power law
Silicon oxide
D2O
Deal-Grove
H2O

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ArticleFinal published version, 68 KB

Cite this

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title = "Comparison of H2O and D2O oxidation kinetics of <100> silicon",

abstract = "Recent reports indicate that the incorporation of deuterium in the gate oxide of MOS-transistors can improve the integrity of thin gate oxides. The easiest and most direct means to incorporate the deuterium is to grow the gate oxide using heavy water (D2O). In this study the oxidation rate of <100> silicon using H2O and D2O arecompared. The experimental data show that the oxidation rate is lower for D2O. The measured oxidation curves can physically not be fitted with the Deal-Grove model. A power law model seems to be more correct. The difference in oxidation rate of silicon using H2O and D2O might be attributed to a difference in H/D desorption from the silicon interface. This can be an explanation for improved oxide integrity.",

keywords = "Oxidation kinetics, Power law, Silicon oxide, D2O, Deal-Grove, H2O",

author = "A.J. Hof and A. Kovalgin and P.H. Woerlee",

year = "2002",

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day = "27",

language = "English",

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pages = "35--38",

booktitle = "Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002",

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TY - GEN

T1 - Comparison of H2O and D2O oxidation kinetics of <100> silicon

AU - Hof, A.J.

AU - Kovalgin, A.

AU - Woerlee, P.H.

N1 - Conference code: 5

PY - 2002/11/27

Y1 - 2002/11/27

N2 - Recent reports indicate that the incorporation of deuterium in the gate oxide of MOS-transistors can improve the integrity of thin gate oxides. The easiest and most direct means to incorporate the deuterium is to grow the gate oxide using heavy water (D2O). In this study the oxidation rate of <100> silicon using H2O and D2O arecompared. The experimental data show that the oxidation rate is lower for D2O. The measured oxidation curves can physically not be fitted with the Deal-Grove model. A power law model seems to be more correct. The difference in oxidation rate of silicon using H2O and D2O might be attributed to a difference in H/D desorption from the silicon interface. This can be an explanation for improved oxide integrity.

AB - Recent reports indicate that the incorporation of deuterium in the gate oxide of MOS-transistors can improve the integrity of thin gate oxides. The easiest and most direct means to incorporate the deuterium is to grow the gate oxide using heavy water (D2O). In this study the oxidation rate of <100> silicon using H2O and D2O arecompared. The experimental data show that the oxidation rate is lower for D2O. The measured oxidation curves can physically not be fitted with the Deal-Grove model. A power law model seems to be more correct. The difference in oxidation rate of silicon using H2O and D2O might be attributed to a difference in H/D desorption from the silicon interface. This can be an explanation for improved oxide integrity.

KW - Oxidation kinetics

KW - Power law

KW - Silicon oxide

KW - D2O

KW - Deal-Grove

KW - H2O

M3 - Conference contribution

SN - 90-73461-33-2

SP - 35

EP - 38

BT - Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002

PB - STW

CY - Utrecht, The Netherlands

T2 - 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002

Y2 - 27 November 2002 through 28 November 2002

ER -