Recent reports indicate that the incorporation of deuterium in the gate oxide of MOS-transistors can improve the integrity of thin gate oxides. The easiest and most direct means to incorporate the deuterium is to grow the gate oxide using heavy water (D2O). In this study the oxidation rate of <100> silicon using H2O and D2O arecompared. The experimental data show that the oxidation rate is lower for D2O. The measured oxidation curves can physically not be fitted with the Deal-Grove model. A power law model seems to be more correct. The difference in oxidation rate of silicon using H2O and D2O might be attributed to a difference in H/D desorption from the silicon interface. This can be an explanation for improved oxide integrity.
|Number of pages||4|
|Publication status||Published - 27 Nov 2002|
|Event||5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 - Veldhoven, Netherlands|
Duration: 27 Nov 2002 → 28 Nov 2002
Conference number: 5
|Workshop||5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002|
|Period||27/11/02 → 28/11/02|
- oxidation kinetics
- Power law
- Silicon oxide
Hof, A. J., Kovalgin, A. Y., & Woerlee, P. H. (2002). Comparison of H2O and D2O oxidation kinetics of <100> silicon. 35-38. Paper presented at 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, Veldhoven, Netherlands.