Comparison of H2O and D2O oxidation kinetics of <100> silicon

A.J. Hof, Alexeij Y. Kovalgin, P.H. Woerlee

    Research output: Contribution to conferencePaperAcademic

    Abstract

    Recent reports indicate that the incorporation of deuterium in the gate oxide of MOS-transistors can improve the integrity of thin gate oxides. The easiest and most direct means to incorporate the deuterium is to grow the gate oxide using heavy water (D2O). In this study the oxidation rate of <100> silicon using H2O and D2O arecompared. The experimental data show that the oxidation rate is lower for D2O. The measured oxidation curves can physically not be fitted with the Deal-Grove model. A power law model seems to be more correct. The difference in oxidation rate of silicon using H2O and D2O might be attributed to a difference in H/D desorption from the silicon interface. This can be an explanation for improved oxide integrity.
    Original languageUndefined
    Pages35-38
    Number of pages4
    Publication statusPublished - 27 Nov 2002
    Event5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 - Veldhoven, Netherlands
    Duration: 27 Nov 200228 Nov 2002
    Conference number: 5

    Workshop

    Workshop5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period27/11/0228/11/02

    Keywords

    • oxidation kinetics
    • Power law
    • EWI-15587
    • Silicon oxide
    • D2O
    • Deal-Grove
    • H2O
    • IR-67759

    Cite this

    Hof, A. J., Kovalgin, A. Y., & Woerlee, P. H. (2002). Comparison of H2O and D2O oxidation kinetics of <100> silicon. 35-38. Paper presented at 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, Veldhoven, Netherlands.
    Hof, A.J. ; Kovalgin, Alexeij Y. ; Woerlee, P.H. / Comparison of H2O and D2O oxidation kinetics of <100> silicon. Paper presented at 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, Veldhoven, Netherlands.4 p.
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    title = "Comparison of H2O and D2O oxidation kinetics of <100> silicon",
    abstract = "Recent reports indicate that the incorporation of deuterium in the gate oxide of MOS-transistors can improve the integrity of thin gate oxides. The easiest and most direct means to incorporate the deuterium is to grow the gate oxide using heavy water (D2O). In this study the oxidation rate of <100> silicon using H2O and D2O arecompared. The experimental data show that the oxidation rate is lower for D2O. The measured oxidation curves can physically not be fitted with the Deal-Grove model. A power law model seems to be more correct. The difference in oxidation rate of silicon using H2O and D2O might be attributed to a difference in H/D desorption from the silicon interface. This can be an explanation for improved oxide integrity.",
    keywords = "oxidation kinetics, Power law, EWI-15587, Silicon oxide, D2O, Deal-Grove, H2O, IR-67759",
    author = "A.J. Hof and Kovalgin, {Alexeij Y.} and P.H. Woerlee",
    year = "2002",
    month = "11",
    day = "27",
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    note = "null ; Conference date: 27-11-2002 Through 28-11-2002",

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    Hof, AJ, Kovalgin, AY & Woerlee, PH 2002, 'Comparison of H2O and D2O oxidation kinetics of <100> silicon' Paper presented at 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, Veldhoven, Netherlands, 27/11/02 - 28/11/02, pp. 35-38.

    Comparison of H2O and D2O oxidation kinetics of <100> silicon. / Hof, A.J.; Kovalgin, Alexeij Y.; Woerlee, P.H.

    2002. 35-38 Paper presented at 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, Veldhoven, Netherlands.

    Research output: Contribution to conferencePaperAcademic

    TY - CONF

    T1 - Comparison of H2O and D2O oxidation kinetics of <100> silicon

    AU - Hof, A.J.

    AU - Kovalgin, Alexeij Y.

    AU - Woerlee, P.H.

    PY - 2002/11/27

    Y1 - 2002/11/27

    N2 - Recent reports indicate that the incorporation of deuterium in the gate oxide of MOS-transistors can improve the integrity of thin gate oxides. The easiest and most direct means to incorporate the deuterium is to grow the gate oxide using heavy water (D2O). In this study the oxidation rate of <100> silicon using H2O and D2O arecompared. The experimental data show that the oxidation rate is lower for D2O. The measured oxidation curves can physically not be fitted with the Deal-Grove model. A power law model seems to be more correct. The difference in oxidation rate of silicon using H2O and D2O might be attributed to a difference in H/D desorption from the silicon interface. This can be an explanation for improved oxide integrity.

    AB - Recent reports indicate that the incorporation of deuterium in the gate oxide of MOS-transistors can improve the integrity of thin gate oxides. The easiest and most direct means to incorporate the deuterium is to grow the gate oxide using heavy water (D2O). In this study the oxidation rate of <100> silicon using H2O and D2O arecompared. The experimental data show that the oxidation rate is lower for D2O. The measured oxidation curves can physically not be fitted with the Deal-Grove model. A power law model seems to be more correct. The difference in oxidation rate of silicon using H2O and D2O might be attributed to a difference in H/D desorption from the silicon interface. This can be an explanation for improved oxide integrity.

    KW - oxidation kinetics

    KW - Power law

    KW - EWI-15587

    KW - Silicon oxide

    KW - D2O

    KW - Deal-Grove

    KW - H2O

    KW - IR-67759

    M3 - Paper

    SP - 35

    EP - 38

    ER -

    Hof AJ, Kovalgin AY, Woerlee PH. Comparison of H2O and D2O oxidation kinetics of <100> silicon. 2002. Paper presented at 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, Veldhoven, Netherlands.