Comparison of hydrogen transport through thin metal, Si and oxide layers

Olena Soroka, J.M. Sturm, F. Bijkerk

Research output: Contribution to conferencePosterAcademic

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Hydrogen radicals can cause fracture and damage of bulk materials and thin films due to their high diffusivity in these systems. In order to find protective layers that can block H diffusion, the hydrogen transport through thin layers should be measured. A thin yttrium film proved to be an effective sensor for atomic hydrogen. It enables the comparison of hydrogen transport through different materials by coating a Y film with a thin layer of a material of interest. A protective Pd thin layer should be added on top of the structure to increase the adsorption of hydrogen on the surface and to mitigate the influence of contamination. Using such a Pd/Ma/Y structure, where material Ma = Ru, Mo, Cu, Ag, Si, SiO2, Al2O3, the time of hydrogen transport through the Ma layer was measured and a qualitative comparison of hydrogen dynamics in different materials was made.
Original languageEnglish
Publication statusPublished - 21 Jan 2019
EventPhysics@Veldhoven 2019 - De Koningshof, Veldhoven, Netherlands
Duration: 22 Jan 201923 Jan 2019


ConferencePhysics@Veldhoven 2019
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