Comparison of Selective Deposition Techniques for Fabricating p+n Ultrashallow Silicon Diodes

Xingyu Liu, Shivakumar D Thammaiah, Thomas L.M. Scholtes, Lis K. Nanver

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    Ultrashallow diodes were fabricated using two different chemical-vapor deposition techniques: either a pure boron (PureB) deposition from diborane or boron-doped Si selective epitaxial growth (SEG) from dichlorsilane and diborane gases. They are evaluated with respect to the current-voltage diode characteristics. The PureB diodes have two decades lower saturation current, good uniformity and no significant leakage currents. In contrast the SEG diodes have leakage currents that cause a factor 10 spread in saturation current. A differential current measurement technique was applied to show that the high SEG-diode saturation currents are a result of high electron injection in the anode region and the spread is due to defectrelated leakage currents originating in the vicinity of the p+-region .
    Original languageEnglish
    Title of host publicationProceedings of ICT.OPEN-2016
    Subtitle of host publicationSemiconductor Advances for Future Electronics and Sensors (SAFE)
    Number of pages5
    Publication statusPublished - 21 Mar 2016

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    Liu, X., Thammaiah, S. D., Scholtes, T. L. M., & Nanver, L. K. (2016). Comparison of Selective Deposition Techniques for Fabricating p+n Ultrashallow Silicon Diodes. In Proceedings of ICT.OPEN-2016: Semiconductor Advances for Future Electronics and Sensors (SAFE)