Ultrashallow diodes were fabricated using two different chemical-vapor deposition techniques: either a pure boron (PureB) deposition from diborane or boron-doped Si selective epitaxial growth (SEG) from dichlorsilane and diborane gases. They are evaluated with respect to the current-voltage diode characteristics. The PureB diodes have two decades lower saturation current, good uniformity and no significant leakage currents. In contrast the SEG diodes have leakage currents that cause a factor 10 spread in saturation current. A differential current measurement technique was applied to show that the high SEG-diode saturation currents are a result of high electron injection in the anode region and the spread is due to defectrelated leakage currents originating in the vicinity of the p+-region .
|Title of host publication||Proceedings of ICT.OPEN-2016|
|Subtitle of host publication||Semiconductor Advances for Future Electronics and Sensors (SAFE)|
|Number of pages||5|
|Publication status||Published - 21 Mar 2016|
Liu, X., Thammaiah, S. D., Scholtes, T. L. M., & Nanver, L. K. (2016). Comparison of Selective Deposition Techniques for Fabricating p+n Ultrashallow Silicon Diodes. In Proceedings of ICT.OPEN-2016: Semiconductor Advances for Future Electronics and Sensors (SAFE)