Comparison of SiON Layers Doped with Phosphorous and Boron for Integrated Optics Applications

F. Sun, A. Driessen, Kerstin Worhoff

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    4 Citations (Scopus)


    In this work plasma enhanced chemical vapor deposition (PECVD) were adopted to achieve boron/phosphorous (B/P) doped silicon oxynitride (SiON) layers. By adjusting the flow rates of corresponding gas precursor (PH3/Ar or B2H6/Ar), SiON layers with different B or P concentrations were obtained. Measurements by X-ray photoelectron spectroscopy (XPS) have shown that PH3 can result in more efficient doping in the layers than B2H6. Compared with B-doped samples, reduction of the hydrogen content can be more easily observed in P-doped SiON layers, as been confirmed by Fourier transform infrared spectroscopy. Hydrogen-related chemical bonds became undetectable after annealing of samples at temperatures as low as 700°C. These results are quite helpful to further research on B/P co-doped SiON layers in application of integrated optical waveguide devices.
    Original languageUndefined
    Title of host publicationProceedings of the 2009 Annual Symposium of the IEEE Photonics Benelux Chapter
    EditorsPhilippe Tassin, Stefano Beri, Gordon Craggs, Xaveer Leijtens, Jan Dankaert
    PublisherVUBPress Brussels University Press
    Number of pages4
    ISBN (Print)978-90-5487-650-2
    Publication statusPublished - 5 Nov 2009
    Event14th Annual Symposium of the IEEE Photonics Benelux Chapter 2009 - Brussels, Belgium
    Duration: 5 Nov 20096 Nov 2009
    Conference number: 14

    Publication series

    PublisherVUBPress Brussels University Press


    Conference14th Annual Symposium of the IEEE Photonics Benelux Chapter 2009


    • IR-69947
    • METIS-265802
    • Doping
    • EWI-17458
    • PECVD
    • Silicon oxynitride
    • phosphorus
    • boron

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