Comparison of SiON Layers Doped with Phosphorous and Boron for Integrated Optics Applications

F. Sun; A. Driessen; Kerstin Worhoff

Comparison of SiON Layers Doped with Phosphorous and Boron for Integrated Optics Applications

F. Sun
, A. Driessen
, Kerstin Worhoff

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

5 Citations (Scopus)

1 Downloads (Pure)

Abstract

In this work plasma enhanced chemical vapor deposition (PECVD) were adopted to achieve boron/phosphorous (B/P) doped silicon oxynitride (SiON) layers. By adjusting the flow rates of corresponding gas precursor (PH3/Ar or B2H6/Ar), SiON layers with different B or P concentrations were obtained. Measurements by X-ray photoelectron spectroscopy (XPS) have shown that PH3 can result in more efficient doping in the layers than B2H6. Compared with B-doped samples, reduction of the hydrogen content can be more easily observed in P-doped SiON layers, as been confirmed by Fourier transform infrared spectroscopy. Hydrogen-related chemical bonds became undetectable after annealing of samples at temperatures as low as 700°C. These results are quite helpful to further research on B/P co-doped SiON layers in application of integrated optical waveguide devices.

Original language	Undefined
Title of host publication	Proceedings of the 2009 Annual Symposium of the IEEE Photonics Benelux Chapter
Editors	Philippe Tassin, Stefano Beri, Gordon Craggs, Xaveer Leijtens, Jan Dankaert
Publisher	VUBPress Brussels University Press
Pages	213-216
Number of pages	4
ISBN (Print)	978-90-5487-650-2
Publication status	Published - 5 Nov 2009
Event	14th Annual Symposium of the IEEE Photonics Benelux Chapter 2009 - Brussels, Belgium Duration: 5 Nov 2009 → 6 Nov 2009 Conference number: 14

Publication series

Name
Publisher	VUBPress Brussels University Press

Conference

Conference	14th Annual Symposium of the IEEE Photonics Benelux Chapter 2009
Country/Territory	Belgium
City	Brussels
Period	5/11/09 → 6/11/09

Keywords

IR-69947
METIS-265802
Doping
EWI-17458
IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY
PECVD
Silicon oxynitride
phosphorus
boron

Access to Document

Cite this

Sun, F., Driessen, A., & Worhoff, K. (2009). Comparison of SiON Layers Doped with Phosphorous and Boron for Integrated Optics Applications. In P. Tassin, S. Beri, G. Craggs, X. Leijtens, & J. Dankaert (Eds.), Proceedings of the 2009 Annual Symposium of the IEEE Photonics Benelux Chapter (pp. 213-216). VUBPress Brussels University Press. http://eprints.eemcs.utwente.nl/secure2/17458/01/Benelux_2009_Sun.pdf

@inproceedings{c5610676287e4cf59caf2f44f372e0e3,

title = "Comparison of SiON Layers Doped with Phosphorous and Boron for Integrated Optics Applications",

abstract = "In this work plasma enhanced chemical vapor deposition (PECVD) were adopted to achieve boron/phosphorous (B/P) doped silicon oxynitride (SiON) layers. By adjusting the flow rates of corresponding gas precursor (PH3/Ar or B2H6/Ar), SiON layers with different B or P concentrations were obtained. Measurements by X-ray photoelectron spectroscopy (XPS) have shown that PH3 can result in more efficient doping in the layers than B2H6. Compared with B-doped samples, reduction of the hydrogen content can be more easily observed in P-doped SiON layers, as been confirmed by Fourier transform infrared spectroscopy. Hydrogen-related chemical bonds became undetectable after annealing of samples at temperatures as low as 700°C. These results are quite helpful to further research on B/P co-doped SiON layers in application of integrated optical waveguide devices.",

keywords = "IR-69947, METIS-265802, Doping, EWI-17458, IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY, PECVD, Silicon oxynitride, phosphorus, boron",

author = "F. Sun and A. Driessen and Kerstin Worhoff",

year = "2009",

month = nov,

day = "5",

language = "Undefined",

isbn = "978-90-5487-650-2",

publisher = "VUBPress Brussels University Press",

pages = "213--216",

editor = "Philippe Tassin and Stefano Beri and Gordon Craggs and Xaveer Leijtens and Jan Dankaert",

booktitle = "Proceedings of the 2009 Annual Symposium of the IEEE Photonics Benelux Chapter",

note = "14th Annual Symposium of the IEEE Photonics Benelux Chapter 2009 ; Conference date: 05-11-2009 Through 06-11-2009",

}

Sun, F, Driessen, A & Worhoff, K 2009, Comparison of SiON Layers Doped with Phosphorous and Boron for Integrated Optics Applications. in P Tassin, S Beri, G Craggs, X Leijtens & J Dankaert (eds), Proceedings of the 2009 Annual Symposium of the IEEE Photonics Benelux Chapter. VUBPress Brussels University Press, pp. 213-216, 14th Annual Symposium of the IEEE Photonics Benelux Chapter 2009, Brussels, Belgium, 5/11/09. <http://eprints.eemcs.utwente.nl/secure2/17458/01/Benelux_2009_Sun.pdf>

Comparison of SiON Layers Doped with Phosphorous and Boron for Integrated Optics Applications. / Sun, F.; Driessen, A.; Worhoff, Kerstin.
Proceedings of the 2009 Annual Symposium of the IEEE Photonics Benelux Chapter. ed. / Philippe Tassin; Stefano Beri; Gordon Craggs; Xaveer Leijtens; Jan Dankaert. VUBPress Brussels University Press, 2009. p. 213-216.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Comparison of SiON Layers Doped with Phosphorous and Boron for Integrated Optics Applications

AU - Sun, F.

AU - Driessen, A.

AU - Worhoff, Kerstin

N1 - Conference code: 14

PY - 2009/11/5

Y1 - 2009/11/5

N2 - In this work plasma enhanced chemical vapor deposition (PECVD) were adopted to achieve boron/phosphorous (B/P) doped silicon oxynitride (SiON) layers. By adjusting the flow rates of corresponding gas precursor (PH3/Ar or B2H6/Ar), SiON layers with different B or P concentrations were obtained. Measurements by X-ray photoelectron spectroscopy (XPS) have shown that PH3 can result in more efficient doping in the layers than B2H6. Compared with B-doped samples, reduction of the hydrogen content can be more easily observed in P-doped SiON layers, as been confirmed by Fourier transform infrared spectroscopy. Hydrogen-related chemical bonds became undetectable after annealing of samples at temperatures as low as 700°C. These results are quite helpful to further research on B/P co-doped SiON layers in application of integrated optical waveguide devices.

AB - In this work plasma enhanced chemical vapor deposition (PECVD) were adopted to achieve boron/phosphorous (B/P) doped silicon oxynitride (SiON) layers. By adjusting the flow rates of corresponding gas precursor (PH3/Ar or B2H6/Ar), SiON layers with different B or P concentrations were obtained. Measurements by X-ray photoelectron spectroscopy (XPS) have shown that PH3 can result in more efficient doping in the layers than B2H6. Compared with B-doped samples, reduction of the hydrogen content can be more easily observed in P-doped SiON layers, as been confirmed by Fourier transform infrared spectroscopy. Hydrogen-related chemical bonds became undetectable after annealing of samples at temperatures as low as 700°C. These results are quite helpful to further research on B/P co-doped SiON layers in application of integrated optical waveguide devices.

KW - IR-69947

KW - METIS-265802

KW - Doping

KW - EWI-17458

KW - IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY

KW - PECVD

KW - Silicon oxynitride

KW - phosphorus

KW - boron

M3 - Conference contribution

SN - 978-90-5487-650-2

SP - 213

EP - 216

BT - Proceedings of the 2009 Annual Symposium of the IEEE Photonics Benelux Chapter

A2 - Tassin, Philippe

A2 - Beri, Stefano

A2 - Craggs, Gordon

A2 - Leijtens, Xaveer

A2 - Dankaert, Jan

PB - VUBPress Brussels University Press

T2 - 14th Annual Symposium of the IEEE Photonics Benelux Chapter 2009

Y2 - 5 November 2009 through 6 November 2009

ER -