This work quantitatively compares soft breakdown identification methods for constant: voltage stress of large-area nMOS capacitors (up to 10 mm2) with 1.8- to 12-nm gate-oxide thickness with negative gate voltage. We conclude that in the studied range, breakdown is identified more reliably with a current step trigger than through increased current fluctuation. We present a method to quantify the system background noise, and show results of data filtering algorithms that significantly enhance the ratio between the breakdown signal and background noise level. Index Terms-CMOS, reliability, soft breakdown, TDDB.
|Number of pages||8|
|Journal||IEEE transactions on device and materials reliability|
|Publication status||Published - 1 Dec 2001|