Comparison of soft-breakdown triggers for large-area capacitors under constant voltage stress

Jurriaan Schmilz*, Hans P. Tuinhout, Hennie J. Kretschmann, Pierre H. Woerlee

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

14 Citations (Scopus)
6 Downloads (Pure)

Abstract

This work quantitatively compares soft breakdown identification methods for constant: voltage stress of large-area nMOS capacitors (up to 10 mm2) with 1.8- to 12-nm gate-oxide thickness with negative gate voltage. We conclude that in the studied range, breakdown is identified more reliably with a current step trigger than through increased current fluctuation. We present a method to quantify the system background noise, and show results of data filtering algorithms that significantly enhance the ratio between the breakdown signal and background noise level. Index Terms-CMOS, reliability, soft breakdown, TDDB.

Original languageEnglish
Pages (from-to)150-157
Number of pages8
JournalIEEE transactions on device and materials reliability
Volume1
Issue number3
DOIs
Publication statusPublished - 1 Dec 2001
Externally publishedYes

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