Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor

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    Abstract

    In this work, the authors developed hot-wire assisted atomic layer deposition (HWALD) to deposit tungsten (W) with a tungsten filament heated up to 1700–2000 C. Atomic hydrogen (at-H) was generated by dissociation of molecular hydrogen (H2), which reacted with WF6 at the substrate to deposit W. The growth behavior was monitored in real time by an in situ spectroscopic ellipsometer. In this work, the authors compare samples with tungsten grown by either HWALD or chemical vapor deposition (CVD) in terms of growth kinetics and properties. For CVD, the samples were made in a mixture of WF6 and molecular or atomic hydrogen. Resistivity of the WF6-H2 CVD layers was 20 lXcm, whereas for the WF6-at-H-CVD layers, it was 28 lXcm. Interestingly, the resistivity was as high as 100 lXcm for the HWALD films, although the tungsten films were 99% pure according to x-ray photoelectron spectroscopy. X-ray diffraction reveals that the HWALD W was crystallized as b-W, whereas both CVD films were in the a-W phase.
    Original languageEnglish
    Article number01A129
    Number of pages10
    JournalJournal of vacuum science and technology A: vacuum, surfaces, and films
    Volume34
    Issue number1
    DOIs
    Publication statusPublished - Jan 2016

    Fingerprint

    cold walls
    Tungsten
    Atomic layer deposition
    atomic layer epitaxy
    Chemical vapor deposition
    tungsten
    reactors
    vapor deposition
    wire
    Wire
    Hydrogen
    hydrogen
    Tungsten deposits
    deposits
    electrical resistivity
    ellipsometers
    Growth kinetics
    Photoelectron spectroscopy
    x ray spectroscopy
    filaments

    Keywords

    • Chemical vapor deposition (CVD)
    • Atomic layer deposition (ALD)
    • Etching
    • Tungsten
    • Electrical resistivity

    Cite this

    @article{ed7145416fad498dabe6deb8f2a736db,
    title = "Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor",
    abstract = "In this work, the authors developed hot-wire assisted atomic layer deposition (HWALD) to deposit tungsten (W) with a tungsten filament heated up to 1700–2000 C. Atomic hydrogen (at-H) was generated by dissociation of molecular hydrogen (H2), which reacted with WF6 at the substrate to deposit W. The growth behavior was monitored in real time by an in situ spectroscopic ellipsometer. In this work, the authors compare samples with tungsten grown by either HWALD or chemical vapor deposition (CVD) in terms of growth kinetics and properties. For CVD, the samples were made in a mixture of WF6 and molecular or atomic hydrogen. Resistivity of the WF6-H2 CVD layers was 20 lXcm, whereas for the WF6-at-H-CVD layers, it was 28 lXcm. Interestingly, the resistivity was as high as 100 lXcm for the HWALD films, although the tungsten films were 99{\%} pure according to x-ray photoelectron spectroscopy. X-ray diffraction reveals that the HWALD W was crystallized as b-W, whereas both CVD films were in the a-W phase.",
    keywords = "Chemical vapor deposition (CVD), Atomic layer deposition (ALD), Etching, Tungsten, Electrical resistivity",
    author = "Mengdi Yang and Aarnink, {Antonius A.I.} and Kovalgin, {Alexeij Y.} and Gravesteijn, {Dirk J} and Wolters, {Robertus A.M.} and Jurriaan Schmitz",
    year = "2016",
    month = "1",
    doi = "10.1116/1.4936387",
    language = "English",
    volume = "34",
    journal = "Journal of vacuum science and technology A: vacuum, surfaces, and films",
    issn = "0734-2101",
    publisher = "AVS Science and Technology Society",
    number = "1",

    }

    TY - JOUR

    T1 - Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor

    AU - Yang, Mengdi

    AU - Aarnink, Antonius A.I.

    AU - Kovalgin, Alexeij Y.

    AU - Gravesteijn, Dirk J

    AU - Wolters, Robertus A.M.

    AU - Schmitz, Jurriaan

    PY - 2016/1

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    N2 - In this work, the authors developed hot-wire assisted atomic layer deposition (HWALD) to deposit tungsten (W) with a tungsten filament heated up to 1700–2000 C. Atomic hydrogen (at-H) was generated by dissociation of molecular hydrogen (H2), which reacted with WF6 at the substrate to deposit W. The growth behavior was monitored in real time by an in situ spectroscopic ellipsometer. In this work, the authors compare samples with tungsten grown by either HWALD or chemical vapor deposition (CVD) in terms of growth kinetics and properties. For CVD, the samples were made in a mixture of WF6 and molecular or atomic hydrogen. Resistivity of the WF6-H2 CVD layers was 20 lXcm, whereas for the WF6-at-H-CVD layers, it was 28 lXcm. Interestingly, the resistivity was as high as 100 lXcm for the HWALD films, although the tungsten films were 99% pure according to x-ray photoelectron spectroscopy. X-ray diffraction reveals that the HWALD W was crystallized as b-W, whereas both CVD films were in the a-W phase.

    AB - In this work, the authors developed hot-wire assisted atomic layer deposition (HWALD) to deposit tungsten (W) with a tungsten filament heated up to 1700–2000 C. Atomic hydrogen (at-H) was generated by dissociation of molecular hydrogen (H2), which reacted with WF6 at the substrate to deposit W. The growth behavior was monitored in real time by an in situ spectroscopic ellipsometer. In this work, the authors compare samples with tungsten grown by either HWALD or chemical vapor deposition (CVD) in terms of growth kinetics and properties. For CVD, the samples were made in a mixture of WF6 and molecular or atomic hydrogen. Resistivity of the WF6-H2 CVD layers was 20 lXcm, whereas for the WF6-at-H-CVD layers, it was 28 lXcm. Interestingly, the resistivity was as high as 100 lXcm for the HWALD films, although the tungsten films were 99% pure according to x-ray photoelectron spectroscopy. X-ray diffraction reveals that the HWALD W was crystallized as b-W, whereas both CVD films were in the a-W phase.

    KW - Chemical vapor deposition (CVD)

    KW - Atomic layer deposition (ALD)

    KW - Etching

    KW - Tungsten

    KW - Electrical resistivity

    U2 - 10.1116/1.4936387

    DO - 10.1116/1.4936387

    M3 - Article

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    JO - Journal of vacuum science and technology A: vacuum, surfaces, and films

    JF - Journal of vacuum science and technology A: vacuum, surfaces, and films

    SN - 0734-2101

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    M1 - 01A129

    ER -