Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction

Guangyao Yu; Thiago Batista Soeiro; Jianning Dong; Pavol Bauer

Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction

Guangyao Yu
, Thiago Batista Soeiro
, Jianning Dong
, Pavol Bauer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

This paper presents the semiconductor losses analytical equations in closed form for two-level voltage source converter, three-level neutral point clamped (NPC) and three-level T-Type PFC topologies in high power applications. The reverse parallel current conduction between the SiC MOSFETs channel and body diode is considered. A circuit simulation model is built in PLECS to estimate the semiconductor losses and to verify the accuracy of the developed analytical model. A calculation example of the semiconductor losses of a 200 kW three-phase rectifier is shown.

Original language	English
Title of host publication	2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)
ISBN (Electronic)	978-9-0758-1539-9
Publication status	Published - Oct 2022
Externally published	Yes
Event	24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe - Hannover, Germany Duration: 5 Sept 2022 → 9 Sept 2022 Conference number: 24 https://epe2022.com/

Conference

Conference	24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe
Abbreviated title	EPE 2022
Country/Territory	Germany
City	Hannover
Period	5/09/22 → 9/09/22
Internet address	https://epe2022.com/

Keywords

n/a OA procedure

Access to Document

https://ieeexplore.ieee.org/document/9907461

Cite this

@inproceedings{0c8d5f9dd119480f9c657b080c6b87f0,

title = "Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction",

abstract = "This paper presents the semiconductor losses analytical equations in closed form for two-level voltage source converter, three-level neutral point clamped (NPC) and three-level T-Type PFC topologies in high power applications. The reverse parallel current conduction between the SiC MOSFETs channel and body diode is considered. A circuit simulation model is built in PLECS to estimate the semiconductor losses and to verify the accuracy of the developed analytical model. A calculation example of the semiconductor losses of a 200 kW three-phase rectifier is shown.",

keywords = "n/a OA procedure",

author = "Guangyao Yu and Soeiro, \{Thiago Batista\} and Jianning Dong and Pavol Bauer",

year = "2022",

month = oct,

language = "English",

isbn = "978-1-6654-8700-9",

booktitle = "2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)",

note = "24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe, EPE 2022 ; Conference date: 05-09-2022 Through 09-09-2022",

url = "https://epe2022.com/",

}

Yu, G, Soeiro, TB, Dong, J & Bauer, P 2022, Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction. in 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe). 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe, Hannover, Germany, 5/09/22. <https://ieeexplore.ieee.org/document/9907461>

Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction. / Yu, Guangyao; Soeiro, Thiago Batista; Dong, Jianning et al.
2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe). 2022.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction

AU - Yu, Guangyao

AU - Soeiro, Thiago Batista

AU - Dong, Jianning

AU - Bauer, Pavol

N1 - Conference code: 24

PY - 2022/10

Y1 - 2022/10

N2 - This paper presents the semiconductor losses analytical equations in closed form for two-level voltage source converter, three-level neutral point clamped (NPC) and three-level T-Type PFC topologies in high power applications. The reverse parallel current conduction between the SiC MOSFETs channel and body diode is considered. A circuit simulation model is built in PLECS to estimate the semiconductor losses and to verify the accuracy of the developed analytical model. A calculation example of the semiconductor losses of a 200 kW three-phase rectifier is shown.

AB - This paper presents the semiconductor losses analytical equations in closed form for two-level voltage source converter, three-level neutral point clamped (NPC) and three-level T-Type PFC topologies in high power applications. The reverse parallel current conduction between the SiC MOSFETs channel and body diode is considered. A circuit simulation model is built in PLECS to estimate the semiconductor losses and to verify the accuracy of the developed analytical model. A calculation example of the semiconductor losses of a 200 kW three-phase rectifier is shown.

KW - n/a OA procedure

UR - https://research.tudelft.nl/en/publications/2bd55523-2133-475c-9304-56ccabcace4d

M3 - Conference contribution

SN - 978-1-6654-8700-9

BT - 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)

T2 - 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe

Y2 - 5 September 2022 through 9 September 2022

ER -

Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction

Abstract

Conference

Keywords

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