Competition between electronic Kerr and free-carrier effects in an ultimate-fast optically switched semiconductor microcavity

E. Yuce, Georgios Ctistis, J. Claudon, E. Dupuy, Klaus J. Boller, J.M. Gerard, Willem L. Vos

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)

Abstract

We have performed ultrafast pump–probe experiments on a GaAs–AlAs microcavity with a resonance near 1300 nm in the “Original” telecom band. We concentrate on ultimate-fast optical switching of the cavity resonance that is measured as a function of pump-pulse energy. We observe that, at low pump-pulse energies, the switching of the cavity resonance is governed by the instantaneous electronic Kerr effect and is achieved within 300 fs. At high pump-pulse energies, the index change induced by free carriers generated in the GaAs start to compete with the electronic Kerr effect and reduce the resonance frequency shift. We have developed an analytic model that predicts this competition in agreement with the experimental data. To this end, we derive the nondegenerate two- and three-photon absorption coefficients for GaAs. Our model includes a new term in the intensity-dependent refractive index that considers the effect of the probe-pulse intensity, which is resonantly enhanced by the cavity. We calculate the effect of the resonantly enhanced probe light on the refractive index change induced by the electronic Kerr effect for cavities with different quality factors. By exploiting the linear regime where only the electronic Kerr effect is observed, we manage to retrieve the nondegenerate third-order nonlinear susceptibility χ(3) for GaAs from the cavity resonance shift as a function of pump-pulse energy.
Original languageEnglish
Pages (from-to)2630-2642
Number of pages13
JournalJournal of the Optical Society of America. B: Optical physics
Volume29
Issue number9
DOIs
Publication statusPublished - 31 Aug 2012

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Kerr effects
cavities
pumps
pulses
electronics
refractivity
energy
photons
optical switching
light beams
frequency shift
Q factors
absorptivity
magnetic permeability
probes
shift

Keywords

  • METIS-287650
  • IR-81152

Cite this

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title = "Competition between electronic Kerr and free-carrier effects in an ultimate-fast optically switched semiconductor microcavity",
abstract = "We have performed ultrafast pump–probe experiments on a GaAs–AlAs microcavity with a resonance near 1300 nm in the “Original” telecom band. We concentrate on ultimate-fast optical switching of the cavity resonance that is measured as a function of pump-pulse energy. We observe that, at low pump-pulse energies, the switching of the cavity resonance is governed by the instantaneous electronic Kerr effect and is achieved within 300 fs. At high pump-pulse energies, the index change induced by free carriers generated in the GaAs start to compete with the electronic Kerr effect and reduce the resonance frequency shift. We have developed an analytic model that predicts this competition in agreement with the experimental data. To this end, we derive the nondegenerate two- and three-photon absorption coefficients for GaAs. Our model includes a new term in the intensity-dependent refractive index that considers the effect of the probe-pulse intensity, which is resonantly enhanced by the cavity. We calculate the effect of the resonantly enhanced probe light on the refractive index change induced by the electronic Kerr effect for cavities with different quality factors. By exploiting the linear regime where only the electronic Kerr effect is observed, we manage to retrieve the nondegenerate third-order nonlinear susceptibility χ(3) for GaAs from the cavity resonance shift as a function of pump-pulse energy.",
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Competition between electronic Kerr and free-carrier effects in an ultimate-fast optically switched semiconductor microcavity. / Yuce, E.; Ctistis, Georgios; Claudon, J.; Dupuy, E.; Boller, Klaus J.; Gerard, J.M.; Vos, Willem L.

In: Journal of the Optical Society of America. B: Optical physics, Vol. 29, No. 9, 31.08.2012, p. 2630-2642.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Competition between electronic Kerr and free-carrier effects in an ultimate-fast optically switched semiconductor microcavity

AU - Yuce, E.

AU - Ctistis, Georgios

AU - Claudon, J.

AU - Dupuy, E.

AU - Boller, Klaus J.

AU - Gerard, J.M.

AU - Vos, Willem L.

PY - 2012/8/31

Y1 - 2012/8/31

N2 - We have performed ultrafast pump–probe experiments on a GaAs–AlAs microcavity with a resonance near 1300 nm in the “Original” telecom band. We concentrate on ultimate-fast optical switching of the cavity resonance that is measured as a function of pump-pulse energy. We observe that, at low pump-pulse energies, the switching of the cavity resonance is governed by the instantaneous electronic Kerr effect and is achieved within 300 fs. At high pump-pulse energies, the index change induced by free carriers generated in the GaAs start to compete with the electronic Kerr effect and reduce the resonance frequency shift. We have developed an analytic model that predicts this competition in agreement with the experimental data. To this end, we derive the nondegenerate two- and three-photon absorption coefficients for GaAs. Our model includes a new term in the intensity-dependent refractive index that considers the effect of the probe-pulse intensity, which is resonantly enhanced by the cavity. We calculate the effect of the resonantly enhanced probe light on the refractive index change induced by the electronic Kerr effect for cavities with different quality factors. By exploiting the linear regime where only the electronic Kerr effect is observed, we manage to retrieve the nondegenerate third-order nonlinear susceptibility χ(3) for GaAs from the cavity resonance shift as a function of pump-pulse energy.

AB - We have performed ultrafast pump–probe experiments on a GaAs–AlAs microcavity with a resonance near 1300 nm in the “Original” telecom band. We concentrate on ultimate-fast optical switching of the cavity resonance that is measured as a function of pump-pulse energy. We observe that, at low pump-pulse energies, the switching of the cavity resonance is governed by the instantaneous electronic Kerr effect and is achieved within 300 fs. At high pump-pulse energies, the index change induced by free carriers generated in the GaAs start to compete with the electronic Kerr effect and reduce the resonance frequency shift. We have developed an analytic model that predicts this competition in agreement with the experimental data. To this end, we derive the nondegenerate two- and three-photon absorption coefficients for GaAs. Our model includes a new term in the intensity-dependent refractive index that considers the effect of the probe-pulse intensity, which is resonantly enhanced by the cavity. We calculate the effect of the resonantly enhanced probe light on the refractive index change induced by the electronic Kerr effect for cavities with different quality factors. By exploiting the linear regime where only the electronic Kerr effect is observed, we manage to retrieve the nondegenerate third-order nonlinear susceptibility χ(3) for GaAs from the cavity resonance shift as a function of pump-pulse energy.

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JO - Journal of the Optical Society of America. B: Optical physics

JF - Journal of the Optical Society of America. B: Optical physics

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