Complementary Resistive Switch Sensing

D. Pellegrini; M. Ottavi; E. Martinelli; C. Di Natale

doi:10.1109/DFT.2018.8602976

Complementary Resistive Switch Sensing

D. Pellegrini, M. Ottavi, E. Martinelli, C. Di Natale

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

Abstract

This document introduces a circuit model for sensing using memristive complementary resistive switch (CRS). Sensing using memristors has been recently introduced for its potential for high density integrations. The CRS element allows to reduce sneak currents as shown in previous literature. A combination of these two properties allows to obtain a very efficient sensing crossbar. Simulations to validate the quality of this new concept were performed at circuit level with SPICE, waiting for actual replies through prototypes testing.

Original language	English
Title of host publication	2018 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2018
DOIs	https://doi.org/10.1109/DFT.2018.8602976
Publication status	Published - 2019
Externally published	Yes
Event	IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2018 - Chicago, United States Duration: 8 Oct 2018 → 10 Oct 2018

Conference

Conference	IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2018
Abbreviated title	DFT 2018
Country/Territory	United States
City	Chicago
Period	8/10/18 → 10/10/18

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10.1109/DFT.2018.8602976

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@inproceedings{77a843e36ced480d9da236300718dfb8,

title = "Complementary Resistive Switch Sensing",

abstract = "This document introduces a circuit model for sensing using memristive complementary resistive switch (CRS). Sensing using memristors has been recently introduced for its potential for high density integrations. The CRS element allows to reduce sneak currents as shown in previous literature. A combination of these two properties allows to obtain a very efficient sensing crossbar. Simulations to validate the quality of this new concept were performed at circuit level with SPICE, waiting for actual replies through prototypes testing.",

author = "D. Pellegrini and M. Ottavi and E. Martinelli and {Di Natale}, C.",

year = "2019",

doi = "10.1109/DFT.2018.8602976",

language = "English",

booktitle = "2018 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2018",

note = "IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2018, DFT 2018 ; Conference date: 08-10-2018 Through 10-10-2018",

}

Pellegrini, D, Ottavi, M, Martinelli, E & Di Natale, C 2019, Complementary Resistive Switch Sensing. in 2018 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2018. IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2018, Chicago, Illinois, United States, 8/10/18. https://doi.org/10.1109/DFT.2018.8602976

TY - GEN

T1 - Complementary Resistive Switch Sensing

AU - Pellegrini, D.

AU - Ottavi, M.

AU - Martinelli, E.

AU - Di Natale, C.

PY - 2019

Y1 - 2019

N2 - This document introduces a circuit model for sensing using memristive complementary resistive switch (CRS). Sensing using memristors has been recently introduced for its potential for high density integrations. The CRS element allows to reduce sneak currents as shown in previous literature. A combination of these two properties allows to obtain a very efficient sensing crossbar. Simulations to validate the quality of this new concept were performed at circuit level with SPICE, waiting for actual replies through prototypes testing.

AB - This document introduces a circuit model for sensing using memristive complementary resistive switch (CRS). Sensing using memristors has been recently introduced for its potential for high density integrations. The CRS element allows to reduce sneak currents as shown in previous literature. A combination of these two properties allows to obtain a very efficient sensing crossbar. Simulations to validate the quality of this new concept were performed at circuit level with SPICE, waiting for actual replies through prototypes testing.

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-85061656801&partnerID=MN8TOARS

U2 - 10.1109/DFT.2018.8602976

DO - 10.1109/DFT.2018.8602976

M3 - Conference contribution

BT - 2018 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2018

T2 - IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2018

Y2 - 8 October 2018 through 10 October 2018

ER -

Complementary Resistive Switch Sensing

Abstract

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