Complementary vertical bipolar transistor process using high-energy ion implantation

F.W. Ragay, A.A.I. Aarnink, H. Wallinga

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    Abstract

    High-energy ion implantation is used as a key processing step in the formation of a complementary bipolar process with both transistor types being vertical. Both n-p-n and p -n-p transistors are made vertically with a deep implanted collector region. Combinations of epitaxial and buried layers are avoided. Both transistors have an ideal Gummel plot with a current gain of about 60. Cutoff frequencies of over 1 GHz have been measured, which is much higher than for conventional lateral p-n-p transistors
    Original languageEnglish
    Pages (from-to)2141-2143
    JournalElectronics letters
    Volume27
    Issue number23
    DOIs
    Publication statusPublished - 1991

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