Complex plume stoichiometry during pulsed laser deposition of SrVO₃ at low oxygen pressures

To control the pulsed laser deposition synthesis, knowledge on the relationship between the plasma plume and the grown thin film is required. We show that the oxidation of species in the plasma plume still affects the SrVO₃ growth even at low oxygen partial pressures. Optical emission spectroscopy measurements for the plasma plume at different growth conditions were correlated with the film properties determined by Atomic force microscopy, X-ray diffraction, and transport. At reducing oxygen pressures, the background argon pressure can affect the oxidation in the plasma plume, which in turn controls the growth kinetics, stoichiometry, and electrical properties of the films.