Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation

M.M. Lunenborg; H.C. de Graaff; A.J. Mouthaan; J.F. Verweij

doi:10.1016/0026-2714(96)00170-9

Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation

M.M. Lunenborg, H.C. de Graaff, A.J. Mouthaan, J.F. Verweij

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Abstract

The role of hot-carrier-induced interface states in NMOSFETs is discussed. A new model is proposed based on measurements in several 0.7¿m CMOS technologies of different suppliers. Our model for the first time enables accurate interface state prediction over many orders of magnitude in time for all stress conditions under pinch-off and incorporates saturation. It can easily be implemented in a reliability circuit simulator, enabling more accurate NMOSFET parameter degradation calculations(e.g. ¿ID ¿gm etc.).

Original language	English
Pages (from-to)	1667-1670
Journal	Microelectronics reliability
Volume	36
Issue number	11/12
DOIs	https://doi.org/10.1016/0026-2714(96)00170-9
Publication status	Published - 1996

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@article{e4b3238d7df44ba48c073cd8f14d64fe,

title = "Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation",

abstract = "The role of hot-carrier-induced interface states in NMOSFETs is discussed. A new model is proposed based on measurements in several 0.7¿m CMOS technologies of different suppliers. Our model for the first time enables accurate interface state prediction over many orders of magnitude in time for all stress conditions under pinch-off and incorporates saturation. It can easily be implemented in a reliability circuit simulator, enabling more accurate NMOSFET parameter degradation calculations(e.g. ¿ID ¿gm etc.).",

author = "M.M. Lunenborg and {de Graaff}, H.C. and A.J. Mouthaan and J.F. Verweij",

year = "1996",

doi = "10.1016/0026-2714(96)00170-9",

language = "English",

volume = "36",

pages = "1667--1670",

journal = "Microelectronics reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd",

number = "11/12",

}

TY - JOUR

T1 - Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation

AU - Lunenborg, M.M.

AU - de Graaff, H.C.

AU - Mouthaan, A.J.

AU - Verweij, J.F.

PY - 1996

Y1 - 1996

N2 - The role of hot-carrier-induced interface states in NMOSFETs is discussed. A new model is proposed based on measurements in several 0.7¿m CMOS technologies of different suppliers. Our model for the first time enables accurate interface state prediction over many orders of magnitude in time for all stress conditions under pinch-off and incorporates saturation. It can easily be implemented in a reliability circuit simulator, enabling more accurate NMOSFET parameter degradation calculations(e.g. ¿ID ¿gm etc.).

AB - The role of hot-carrier-induced interface states in NMOSFETs is discussed. A new model is proposed based on measurements in several 0.7¿m CMOS technologies of different suppliers. Our model for the first time enables accurate interface state prediction over many orders of magnitude in time for all stress conditions under pinch-off and incorporates saturation. It can easily be implemented in a reliability circuit simulator, enabling more accurate NMOSFET parameter degradation calculations(e.g. ¿ID ¿gm etc.).

U2 - 10.1016/0026-2714(96)00170-9

DO - 10.1016/0026-2714(96)00170-9

M3 - Article

SN - 0026-2714

VL - 36

SP - 1667

EP - 1670

JO - Microelectronics reliability

JF - Microelectronics reliability

IS - 11/12

ER -

Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation

Abstract

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