Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation

M.M. Lunenborg, M.M. Lunenborg, H.C. de Graaff, H.C. de Graaff, A.J. Mouthaan, J.F. Verweij, J.F. Verweij

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    Abstract

    The role of hot-carrier-induced interface states in NMOSFETs is discussed. A new model is proposed based on measurements in several 0.7¿m CMOS technologies of different suppliers. Our model for the first time enables accurate interface state prediction over many orders of magnitude in time for all stress conditions under pinch-off and incorporates saturation. It can easily be implemented in a reliability circuit simulator, enabling more accurate NMOSFET parameter degradation calculations(e.g. ¿ID ¿gm etc.).
    Original languageUndefined
    Pages (from-to)1667-1670
    JournalMicroelectronics reliability
    Volume36
    Issue number11/12
    DOIs
    Publication statusPublished - 1996

    Keywords

    • METIS-111999
    • IR-15127

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