Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers

Sergio Andrés Vázquez-Córdova, Yean Sheng Yong, S. Aravazhi, Kerstin Worhoff, Markus Pollnau

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Abstract

Integrated optical amplifiers employing ytterbium-doped potassium double tungstates exhibit an ultra-high peak gain exceeding 1000 dB/cm, in addition to a broad gain of up to 150 dB/cm over a 55-nm wavelength range. Here we report a study of the luminescence lifetime in samples spanning a broad range of dopant concentrations (1.2−57.5 at.%). By use of the pinhole method, elongation of the luminescence lifetime due to radiation trapping is avoided, providing a more accurate analysis of concentration quenching of the luminescence lifetime, which directly influences the waveguide amplifier performance and can, in principle, inhibit scaling of the gain with increasing dopant concentration.
Original languageUndefined
Title of host publication17th Annual Symposium of the IEEE Photonics Benelux Chapter
Place of PublicationMons, Belgium
PublisherUniversity of Mons, Faculty of Engineering
Pages223-226
Number of pages4
ISBN (Print)978-2-8052-0184-4
Publication statusPublished - 29 Nov 2012
Event17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012 - Mons, Belgium
Duration: 29 Nov 201230 Nov 2012
Conference number: 17
http://www.telecom.fpms.ac.be/IPS_symposium2012/

Publication series

Name
PublisherUniversity of Mons, Faculty of Engineering

Conference

Conference17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012
CountryBelgium
CityMons
Period29/11/1230/11/12
Internet address

Keywords

  • EWI-22656
  • IR-82550
  • METIS-296166
  • IOMS-APD: Active Photonic Devices

Cite this

Vázquez-Córdova, S. A., Yong, Y. S., Aravazhi, S., Worhoff, K., & Pollnau, M. (2012). Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers. In 17th Annual Symposium of the IEEE Photonics Benelux Chapter (pp. 223-226). Mons, Belgium: University of Mons, Faculty of Engineering.
Vázquez-Córdova, Sergio Andrés ; Yong, Yean Sheng ; Aravazhi, S. ; Worhoff, Kerstin ; Pollnau, Markus. / Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers. 17th Annual Symposium of the IEEE Photonics Benelux Chapter. Mons, Belgium : University of Mons, Faculty of Engineering, 2012. pp. 223-226
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abstract = "Integrated optical amplifiers employing ytterbium-doped potassium double tungstates exhibit an ultra-high peak gain exceeding 1000 dB/cm, in addition to a broad gain of up to 150 dB/cm over a 55-nm wavelength range. Here we report a study of the luminescence lifetime in samples spanning a broad range of dopant concentrations (1.2−57.5 at.{\%}). By use of the pinhole method, elongation of the luminescence lifetime due to radiation trapping is avoided, providing a more accurate analysis of concentration quenching of the luminescence lifetime, which directly influences the waveguide amplifier performance and can, in principle, inhibit scaling of the gain with increasing dopant concentration.",
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author = "V{\'a}zquez-C{\'o}rdova, {Sergio Andr{\'e}s} and Yong, {Yean Sheng} and S. Aravazhi and Kerstin Worhoff and Markus Pollnau",
note = "URL for the symposium: http://www.telecom.fpms.ac.be/IPS_symposium2012/",
year = "2012",
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publisher = "University of Mons, Faculty of Engineering",
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Vázquez-Córdova, SA, Yong, YS, Aravazhi, S, Worhoff, K & Pollnau, M 2012, Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers. in 17th Annual Symposium of the IEEE Photonics Benelux Chapter. University of Mons, Faculty of Engineering, Mons, Belgium, pp. 223-226, 17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012, Mons, Belgium, 29/11/12.

Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers. / Vázquez-Córdova, Sergio Andrés; Yong, Yean Sheng; Aravazhi, S.; Worhoff, Kerstin; Pollnau, Markus.

17th Annual Symposium of the IEEE Photonics Benelux Chapter. Mons, Belgium : University of Mons, Faculty of Engineering, 2012. p. 223-226.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

TY - GEN

T1 - Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers

AU - Vázquez-Córdova, Sergio Andrés

AU - Yong, Yean Sheng

AU - Aravazhi, S.

AU - Worhoff, Kerstin

AU - Pollnau, Markus

N1 - URL for the symposium: http://www.telecom.fpms.ac.be/IPS_symposium2012/

PY - 2012/11/29

Y1 - 2012/11/29

N2 - Integrated optical amplifiers employing ytterbium-doped potassium double tungstates exhibit an ultra-high peak gain exceeding 1000 dB/cm, in addition to a broad gain of up to 150 dB/cm over a 55-nm wavelength range. Here we report a study of the luminescence lifetime in samples spanning a broad range of dopant concentrations (1.2−57.5 at.%). By use of the pinhole method, elongation of the luminescence lifetime due to radiation trapping is avoided, providing a more accurate analysis of concentration quenching of the luminescence lifetime, which directly influences the waveguide amplifier performance and can, in principle, inhibit scaling of the gain with increasing dopant concentration.

AB - Integrated optical amplifiers employing ytterbium-doped potassium double tungstates exhibit an ultra-high peak gain exceeding 1000 dB/cm, in addition to a broad gain of up to 150 dB/cm over a 55-nm wavelength range. Here we report a study of the luminescence lifetime in samples spanning a broad range of dopant concentrations (1.2−57.5 at.%). By use of the pinhole method, elongation of the luminescence lifetime due to radiation trapping is avoided, providing a more accurate analysis of concentration quenching of the luminescence lifetime, which directly influences the waveguide amplifier performance and can, in principle, inhibit scaling of the gain with increasing dopant concentration.

KW - EWI-22656

KW - IR-82550

KW - METIS-296166

KW - IOMS-APD: Active Photonic Devices

M3 - Conference contribution

SN - 978-2-8052-0184-4

SP - 223

EP - 226

BT - 17th Annual Symposium of the IEEE Photonics Benelux Chapter

PB - University of Mons, Faculty of Engineering

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Vázquez-Córdova SA, Yong YS, Aravazhi S, Worhoff K, Pollnau M. Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers. In 17th Annual Symposium of the IEEE Photonics Benelux Chapter. Mons, Belgium: University of Mons, Faculty of Engineering. 2012. p. 223-226