Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers

Sergio Andrés Vázquez-Córdova, Yean Sheng Yong, S. Aravazhi, Kerstin Worhoff, Markus Pollnau

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Abstract

    Integrated optical amplifiers employing ytterbium-doped potassium double tungstates exhibit an ultra-high peak gain exceeding 1000 dB/cm, in addition to a broad gain of up to 150 dB/cm over a 55-nm wavelength range. Here we report a study of the luminescence lifetime in samples spanning a broad range of dopant concentrations (1.2−57.5 at.%). By use of the pinhole method, elongation of the luminescence lifetime due to radiation trapping is avoided, providing a more accurate analysis of concentration quenching of the luminescence lifetime, which directly influences the waveguide amplifier performance and can, in principle, inhibit scaling of the gain with increasing dopant concentration.
    Original languageUndefined
    Title of host publication17th Annual Symposium of the IEEE Photonics Benelux Chapter
    Place of PublicationMons, Belgium
    PublisherUniversity of Mons, Faculty of Engineering
    Pages223-226
    Number of pages4
    ISBN (Print)978-2-8052-0184-4
    Publication statusPublished - 29 Nov 2012
    Event17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012 - Mons, Belgium
    Duration: 29 Nov 201230 Nov 2012
    Conference number: 17
    http://www.telecom.fpms.ac.be/IPS_symposium2012/

    Publication series

    Name
    PublisherUniversity of Mons, Faculty of Engineering

    Conference

    Conference17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012
    CountryBelgium
    CityMons
    Period29/11/1230/11/12
    Internet address

    Keywords

    • EWI-22656
    • IR-82550
    • METIS-296166
    • IOMS-APD: Active Photonic Devices

    Cite this

    Vázquez-Córdova, S. A., Yong, Y. S., Aravazhi, S., Worhoff, K., & Pollnau, M. (2012). Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers. In 17th Annual Symposium of the IEEE Photonics Benelux Chapter (pp. 223-226). Mons, Belgium: University of Mons, Faculty of Engineering.
    Vázquez-Córdova, Sergio Andrés ; Yong, Yean Sheng ; Aravazhi, S. ; Worhoff, Kerstin ; Pollnau, Markus. / Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers. 17th Annual Symposium of the IEEE Photonics Benelux Chapter. Mons, Belgium : University of Mons, Faculty of Engineering, 2012. pp. 223-226
    @inproceedings{81acdd63bae14e18a2a1be9d83f0d708,
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    abstract = "Integrated optical amplifiers employing ytterbium-doped potassium double tungstates exhibit an ultra-high peak gain exceeding 1000 dB/cm, in addition to a broad gain of up to 150 dB/cm over a 55-nm wavelength range. Here we report a study of the luminescence lifetime in samples spanning a broad range of dopant concentrations (1.2−57.5 at.{\%}). By use of the pinhole method, elongation of the luminescence lifetime due to radiation trapping is avoided, providing a more accurate analysis of concentration quenching of the luminescence lifetime, which directly influences the waveguide amplifier performance and can, in principle, inhibit scaling of the gain with increasing dopant concentration.",
    keywords = "EWI-22656, IR-82550, METIS-296166, IOMS-APD: Active Photonic Devices",
    author = "V{\'a}zquez-C{\'o}rdova, {Sergio Andr{\'e}s} and Yong, {Yean Sheng} and S. Aravazhi and Kerstin Worhoff and Markus Pollnau",
    note = "URL for the symposium: http://www.telecom.fpms.ac.be/IPS_symposium2012/",
    year = "2012",
    month = "11",
    day = "29",
    language = "Undefined",
    isbn = "978-2-8052-0184-4",
    publisher = "University of Mons, Faculty of Engineering",
    pages = "223--226",
    booktitle = "17th Annual Symposium of the IEEE Photonics Benelux Chapter",

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    Vázquez-Córdova, SA, Yong, YS, Aravazhi, S, Worhoff, K & Pollnau, M 2012, Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers. in 17th Annual Symposium of the IEEE Photonics Benelux Chapter. University of Mons, Faculty of Engineering, Mons, Belgium, pp. 223-226, 17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012, Mons, Belgium, 29/11/12.

    Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers. / Vázquez-Córdova, Sergio Andrés; Yong, Yean Sheng; Aravazhi, S.; Worhoff, Kerstin; Pollnau, Markus.

    17th Annual Symposium of the IEEE Photonics Benelux Chapter. Mons, Belgium : University of Mons, Faculty of Engineering, 2012. p. 223-226.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    TY - GEN

    T1 - Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers

    AU - Vázquez-Córdova, Sergio Andrés

    AU - Yong, Yean Sheng

    AU - Aravazhi, S.

    AU - Worhoff, Kerstin

    AU - Pollnau, Markus

    N1 - URL for the symposium: http://www.telecom.fpms.ac.be/IPS_symposium2012/

    PY - 2012/11/29

    Y1 - 2012/11/29

    N2 - Integrated optical amplifiers employing ytterbium-doped potassium double tungstates exhibit an ultra-high peak gain exceeding 1000 dB/cm, in addition to a broad gain of up to 150 dB/cm over a 55-nm wavelength range. Here we report a study of the luminescence lifetime in samples spanning a broad range of dopant concentrations (1.2−57.5 at.%). By use of the pinhole method, elongation of the luminescence lifetime due to radiation trapping is avoided, providing a more accurate analysis of concentration quenching of the luminescence lifetime, which directly influences the waveguide amplifier performance and can, in principle, inhibit scaling of the gain with increasing dopant concentration.

    AB - Integrated optical amplifiers employing ytterbium-doped potassium double tungstates exhibit an ultra-high peak gain exceeding 1000 dB/cm, in addition to a broad gain of up to 150 dB/cm over a 55-nm wavelength range. Here we report a study of the luminescence lifetime in samples spanning a broad range of dopant concentrations (1.2−57.5 at.%). By use of the pinhole method, elongation of the luminescence lifetime due to radiation trapping is avoided, providing a more accurate analysis of concentration quenching of the luminescence lifetime, which directly influences the waveguide amplifier performance and can, in principle, inhibit scaling of the gain with increasing dopant concentration.

    KW - EWI-22656

    KW - IR-82550

    KW - METIS-296166

    KW - IOMS-APD: Active Photonic Devices

    M3 - Conference contribution

    SN - 978-2-8052-0184-4

    SP - 223

    EP - 226

    BT - 17th Annual Symposium of the IEEE Photonics Benelux Chapter

    PB - University of Mons, Faculty of Engineering

    CY - Mons, Belgium

    ER -

    Vázquez-Córdova SA, Yong YS, Aravazhi S, Worhoff K, Pollnau M. Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers. In 17th Annual Symposium of the IEEE Photonics Benelux Chapter. Mons, Belgium: University of Mons, Faculty of Engineering. 2012. p. 223-226