Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers

Sergio Andrés Vázquez-Córdova; Yean Sheng Yong; S. Aravazhi; Kerstin Worhoff; Markus Pollnau

Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers

Sergio Andrés Vázquez-Córdova
, Yean Sheng Yong
, S. Aravazhi
, Kerstin Worhoff
, Markus Pollnau

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

Abstract

Integrated optical amplifiers employing ytterbium-doped potassium double tungstates exhibit an ultra-high peak gain exceeding 1000 dB/cm, in addition to a broad gain of up to 150 dB/cm over a 55-nm wavelength range. Here we report a study of the luminescence lifetime in samples spanning a broad range of dopant concentrations (1.2−57.5 at.%). By use of the pinhole method, elongation of the luminescence lifetime due to radiation trapping is avoided, providing a more accurate analysis of concentration quenching of the luminescence lifetime, which directly influences the waveguide amplifier performance and can, in principle, inhibit scaling of the gain with increasing dopant concentration.

Original language	Undefined
Title of host publication	17th Annual Symposium of the IEEE Photonics Benelux Chapter
Place of Publication	Mons, Belgium
Publisher	University of Mons
Pages	223-226
Number of pages	4
ISBN (Print)	978-2-8052-0184-4
Publication status	Published - 29 Nov 2012
Event	17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012 - Mons, Belgium Duration: 29 Nov 2012 → 30 Nov 2012 Conference number: 17 http://www.telecom.fpms.ac.be/IPS_symposium2012/

Publication series

Name
Publisher	University of Mons, Faculty of Engineering

Conference

Conference	17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012
Country/Territory	Belgium
City	Mons
Period	29/11/12 → 30/11/12
Internet address	http://www.telecom.fpms.ac.be/IPS_symposium2012/

Keywords

EWI-22656
IR-82550
METIS-296166
IOMS-APD: Active Photonic Devices

Access to Document

http://eprints.eemcs.utwente.nl/secure2/22656/01/2012_IEEE_Benelux_Vazquez-Cordova_full_paper_v2.pdf

Cite this

Vázquez-Córdova, S. A., Yong, Y. S., Aravazhi, S., Worhoff, K., & Pollnau, M. (2012). Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers. In 17th Annual Symposium of the IEEE Photonics Benelux Chapter (pp. 223-226). University of Mons. http://eprints.eemcs.utwente.nl/secure2/22656/01/2012_IEEE_Benelux_Vazquez-Cordova_full_paper_v2.pdf

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title = "Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers",

abstract = "Integrated optical amplifiers employing ytterbium-doped potassium double tungstates exhibit an ultra-high peak gain exceeding 1000 dB/cm, in addition to a broad gain of up to 150 dB/cm over a 55-nm wavelength range. Here we report a study of the luminescence lifetime in samples spanning a broad range of dopant concentrations (1.2−57.5 at.\%). By use of the pinhole method, elongation of the luminescence lifetime due to radiation trapping is avoided, providing a more accurate analysis of concentration quenching of the luminescence lifetime, which directly influences the waveguide amplifier performance and can, in principle, inhibit scaling of the gain with increasing dopant concentration.",

keywords = "EWI-22656, IR-82550, METIS-296166, IOMS-APD: Active Photonic Devices",

author = "V{\'a}zquez-C{\'o}rdova, \{Sergio Andr{\'e}s\} and Yong, \{Yean Sheng\} and S. Aravazhi and Kerstin Worhoff and Markus Pollnau",

note = "URL for the symposium: http://www.telecom.fpms.ac.be/IPS\_symposium2012/; 17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012 ; Conference date: 29-11-2012 Through 30-11-2012",

year = "2012",

month = nov,

day = "29",

language = "Undefined",

isbn = "978-2-8052-0184-4",

publisher = "University of Mons",

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booktitle = "17th Annual Symposium of the IEEE Photonics Benelux Chapter",

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Vázquez-Córdova, SA, Yong, YS, Aravazhi, S, Worhoff, K & Pollnau, M 2012, Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers. in 17th Annual Symposium of the IEEE Photonics Benelux Chapter. University of Mons, Mons, Belgium, pp. 223-226, 17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012, Mons, Belgium, 29/11/12. <http://eprints.eemcs.utwente.nl/secure2/22656/01/2012_IEEE_Benelux_Vazquez-Cordova_full_paper_v2.pdf>

Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers. / Vázquez-Córdova, Sergio Andrés; Yong, Yean Sheng; Aravazhi, S. et al.
17th Annual Symposium of the IEEE Photonics Benelux Chapter. Mons, Belgium: University of Mons, 2012. p. 223-226.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Concentration quenching of luminescence lifetime in ytterbium-doped potassium double tungstate waveguide amplifiers

AU - Vázquez-Córdova, Sergio Andrés

AU - Yong, Yean Sheng

AU - Aravazhi, S.

AU - Worhoff, Kerstin

AU - Pollnau, Markus

N1 - Conference code: 17

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N2 - Integrated optical amplifiers employing ytterbium-doped potassium double tungstates exhibit an ultra-high peak gain exceeding 1000 dB/cm, in addition to a broad gain of up to 150 dB/cm over a 55-nm wavelength range. Here we report a study of the luminescence lifetime in samples spanning a broad range of dopant concentrations (1.2−57.5 at.%). By use of the pinhole method, elongation of the luminescence lifetime due to radiation trapping is avoided, providing a more accurate analysis of concentration quenching of the luminescence lifetime, which directly influences the waveguide amplifier performance and can, in principle, inhibit scaling of the gain with increasing dopant concentration.

AB - Integrated optical amplifiers employing ytterbium-doped potassium double tungstates exhibit an ultra-high peak gain exceeding 1000 dB/cm, in addition to a broad gain of up to 150 dB/cm over a 55-nm wavelength range. Here we report a study of the luminescence lifetime in samples spanning a broad range of dopant concentrations (1.2−57.5 at.%). By use of the pinhole method, elongation of the luminescence lifetime due to radiation trapping is avoided, providing a more accurate analysis of concentration quenching of the luminescence lifetime, which directly influences the waveguide amplifier performance and can, in principle, inhibit scaling of the gain with increasing dopant concentration.

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KW - IOMS-APD: Active Photonic Devices

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BT - 17th Annual Symposium of the IEEE Photonics Benelux Chapter

PB - University of Mons

CY - Mons, Belgium

T2 - 17th Annual Symposium of the IEEE Photonics Benelux Chapter 2012

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