Conductance along the interface formed by 400 �C pure boron deposition on silicon

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Abstract

The conductance along the interface between an as-deposited pure boron layer and n-type Si, fabricated at 400 �C, is found to be reliably formed with high-ohmic sheet resistance values going from ~ 30 k Ω/sq to 1 M Ω/sq, depending on the exact substrate doping and biasing. The temperature coefficient is negative. It is proposed that this behavior is due to an interface monolayer of electron-filled acceptor states attracting an inversion layer of holes that provide ideal p+n junction behavior and lateral carrier transport unperturbed by interface defects.

Original languageEnglish
Article number6998818
Pages (from-to)102-104
Number of pages3
JournalIEEE electron device letters
Volume36
Issue number2
DOIs
Publication statusPublished - 1 Feb 2015
Externally publishedYes

Keywords

  • boron chemical-vapor deposition
  • high-ohmic resistors
  • interface conductance
  • junction diodes
  • sheet resistance

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