Conductance studies on different types of Nb/Al,AlOx(Al)/Nb Josephson tunnel junctions

D.J. Adelerhof; E.P. Houwman; D. Veldhuis; J. Flokstra; H. Rogalla

doi:10.1016/S0921-4526(09)80376-1

Conductance studies on different types of Nb/Al,AlOx(Al)/Nb Josephson tunnel junctions

D.J. Adelerhof, E.P. Houwman, D. Veldhuis, J. Flokstra, H. Rogalla

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Abstract

The conductance-voltage characteristics of different types of Josephson tunnel junctions have been measured at 4.2 K: symmetric Nb/Al, AlOx/Al/Nb, asymmetric Nb/Al, AlOx/Nb and Nb/Al/AlOx-/AlOx/Nb, containing a double oxidation layer. The symmetric junctions can be described very well by a trapezoidal potential barrier model. The asymmetric junctions show less agreement with theory. In these junctions resistance switching occurs, possibly due to charge trapping. The resistance is lower than in symmetric junctions. The conductance measurements on double oxidation layer junctions show, that this type of junction has an inhomogeneous oxide layer.

Original language	English
Pages (from-to)	1581-1582
Number of pages	1
Journal	Physica B
Volume	165-16
Issue number	165
DOIs	https://doi.org/10.1016/S0921-4526(09)80376-1
Publication status	Published - 1990

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title = "Conductance studies on different types of Nb/Al,AlOx(Al)/Nb Josephson tunnel junctions",

abstract = "The conductance-voltage characteristics of different types of Josephson tunnel junctions have been measured at 4.2 K: symmetric Nb/Al, AlOx/Al/Nb, asymmetric Nb/Al, AlOx/Nb and Nb/Al/AlOx-/AlOx/Nb, containing a double oxidation layer. The symmetric junctions can be described very well by a trapezoidal potential barrier model. The asymmetric junctions show less agreement with theory. In these junctions resistance switching occurs, possibly due to charge trapping. The resistance is lower than in symmetric junctions. The conductance measurements on double oxidation layer junctions show, that this type of junction has an inhomogeneous oxide layer.",

author = "D.J. Adelerhof and E.P. Houwman and D. Veldhuis and J. Flokstra and H. Rogalla",

year = "1990",

doi = "10.1016/S0921-4526(09)80376-1",

language = "English",

volume = "165-16",

pages = "1581--1582",

journal = "Physica B",

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TY - JOUR

T1 - Conductance studies on different types of Nb/Al,AlOx(Al)/Nb Josephson tunnel junctions

AU - Adelerhof, D.J.

AU - Houwman, E.P.

AU - Veldhuis, D.

AU - Flokstra, J.

AU - Rogalla, H.

PY - 1990

Y1 - 1990

N2 - The conductance-voltage characteristics of different types of Josephson tunnel junctions have been measured at 4.2 K: symmetric Nb/Al, AlOx/Al/Nb, asymmetric Nb/Al, AlOx/Nb and Nb/Al/AlOx-/AlOx/Nb, containing a double oxidation layer. The symmetric junctions can be described very well by a trapezoidal potential barrier model. The asymmetric junctions show less agreement with theory. In these junctions resistance switching occurs, possibly due to charge trapping. The resistance is lower than in symmetric junctions. The conductance measurements on double oxidation layer junctions show, that this type of junction has an inhomogeneous oxide layer.

AB - The conductance-voltage characteristics of different types of Josephson tunnel junctions have been measured at 4.2 K: symmetric Nb/Al, AlOx/Al/Nb, asymmetric Nb/Al, AlOx/Nb and Nb/Al/AlOx-/AlOx/Nb, containing a double oxidation layer. The symmetric junctions can be described very well by a trapezoidal potential barrier model. The asymmetric junctions show less agreement with theory. In these junctions resistance switching occurs, possibly due to charge trapping. The resistance is lower than in symmetric junctions. The conductance measurements on double oxidation layer junctions show, that this type of junction has an inhomogeneous oxide layer.

U2 - 10.1016/S0921-4526(09)80376-1

DO - 10.1016/S0921-4526(09)80376-1

M3 - Article

SN - 0921-4526

VL - 165-16

SP - 1581

EP - 1582

JO - Physica B

JF - Physica B

IS - 165

ER -

Conductance studies on different types of Nb/Al,AlOx(Al)/Nb Josephson tunnel junctions

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