Conductance switching in Ag2S devices fabricated by in situ sulfurization

M Morales-Masis, S J van der Molen, W T Fu, Marcel B.S. Hesselberth, Jan M. van Ruitenbeek*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

62 Citations (Scopus)

Abstract

We report a simple and reproducible method to fabricate switchable Ag2S devices. The α-Ag2S thin films are produced by a sulfurization process after silver deposition on an Si substrate. Structure and composition of the Ag2S are characterized using XRD and RBS. Our samples show semiconductor behaviour at low bias voltages, whereas they exhibit reproducible bipolar resistance switching at higher bias voltages. The transition between both types of behaviour is observed by hysteresis in the IV curves, indicating decomposition of the Ag2S, increasing the Ag+ ion mobility. The as-fabricated Ag2S samples are a good candidate for future solid state memory devices, as they show reproducible memory resistive properties and they are fabricated by an accessible and reliable method.
Original languageEnglish
Article number095710
JournalNanotechnology
Volume20
Issue number9
DOIs
Publication statusPublished - 11 Feb 2009
Externally publishedYes

Fingerprint Dive into the research topics of 'Conductance switching in Ag<sub>2</sub>S devices fabricated by <i>in situ</i> sulfurization'. Together they form a unique fingerprint.

  • Cite this

    Morales-Masis, M., Molen, S. J. V. D., Fu, W. T., Hesselberth, M. B. S., & van Ruitenbeek, J. M. (2009). Conductance switching in Ag2S devices fabricated by in situ sulfurization. Nanotechnology, 20(9), [095710]. https://doi.org/10.1088/0957-4484/20/9/095710