Conduction and electric field effect in ultra-thin TiN films

B. Van Hao; Alexeij Y. Kovalgin; Jurriaan Schmitz; Robertus A.M. Wolters

doi:10.1063/1.4817007

Conduction and electric field effect in ultra-thin TiN films

B. Van Hao, Alexeij Y. Kovalgin, Jurriaan Schmitz, Robertus A.M. Wolters

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Using low pressure atomic layer deposition, ultra-thin continuous TiN films were prepared. The temperature coefficient of resistance (TCR), resistivity and field effect properties of these films were investigated. With decreasing film thickness, a positive-to-negative transition of TCR and a steep increase of resistivity were observed. This is attributed to the metal-semimetal transition of the TiN films. We demonstrate appreciable field-induced current modulation up to 11% in a 0.65 nm TiN film. The field effect is remarkably independent of temperature. A polarity asymmetry of the current-voltage characteristics is found, attributed to the interplay between different types of the carriers.

Original language	Undefined
Pages (from-to)	051904
Number of pages	4
Journal	Applied physics letters
Volume	103
Issue number	5
DOIs	https://doi.org/10.1063/1.4817007
Publication status	Published - 31 Jul 2013

Keywords

EWI-23557
atomic layer depositionelectrical resistivitymetal-insulator transitionthin filmstitanium compounds
Electrical resistivity
Thin Films
METIS-297761
metal-insulator transition
IR-86965
Atomic Layer Deposition
titanium compounds

Access to Document

10.1063/1.4817007

http://eprints.eemcs.utwente.nl/secure2/23557/01/hao_van_bui_APL.pdf

Cite this

@article{e30d958c03aa45dca87b37865db9a831,

title = "Conduction and electric field effect in ultra-thin TiN films",

abstract = "Using low pressure atomic layer deposition, ultra-thin continuous TiN films were prepared. The temperature coefficient of resistance (TCR), resistivity and field effect properties of these films were investigated. With decreasing film thickness, a positive-to-negative transition of TCR and a steep increase of resistivity were observed. This is attributed to the metal-semimetal transition of the TiN films. We demonstrate appreciable field-induced current modulation up to 11% in a 0.65 nm TiN film. The field effect is remarkably independent of temperature. A polarity asymmetry of the current-voltage characteristics is found, attributed to the interplay between different types of the carriers.",

keywords = "EWI-23557, atomic layer depositionelectrical resistivitymetal-insulator transitionthin filmstitanium compounds, Electrical resistivity, Thin Films, METIS-297761, metal-insulator transition, IR-86965, Atomic Layer Deposition, titanium compounds",

author = "{Van Hao}, B. and Kovalgin, {Alexeij Y.} and Jurriaan Schmitz and Wolters, {Robertus A.M.}",

note = "eemcs-eprint-23557 ",

year = "2013",

month = jul,

day = "31",

doi = "10.1063/1.4817007",

language = "Undefined",

volume = "103",

pages = "051904",

journal = "Applied physics letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Conduction and electric field effect in ultra-thin TiN films

AU - Van Hao, B.

AU - Kovalgin, Alexeij Y.

AU - Schmitz, Jurriaan

AU - Wolters, Robertus A.M.

N1 - eemcs-eprint-23557

PY - 2013/7/31

Y1 - 2013/7/31

N2 - Using low pressure atomic layer deposition, ultra-thin continuous TiN films were prepared. The temperature coefficient of resistance (TCR), resistivity and field effect properties of these films were investigated. With decreasing film thickness, a positive-to-negative transition of TCR and a steep increase of resistivity were observed. This is attributed to the metal-semimetal transition of the TiN films. We demonstrate appreciable field-induced current modulation up to 11% in a 0.65 nm TiN film. The field effect is remarkably independent of temperature. A polarity asymmetry of the current-voltage characteristics is found, attributed to the interplay between different types of the carriers.

AB - Using low pressure atomic layer deposition, ultra-thin continuous TiN films were prepared. The temperature coefficient of resistance (TCR), resistivity and field effect properties of these films were investigated. With decreasing film thickness, a positive-to-negative transition of TCR and a steep increase of resistivity were observed. This is attributed to the metal-semimetal transition of the TiN films. We demonstrate appreciable field-induced current modulation up to 11% in a 0.65 nm TiN film. The field effect is remarkably independent of temperature. A polarity asymmetry of the current-voltage characteristics is found, attributed to the interplay between different types of the carriers.

KW - EWI-23557

KW - atomic layer depositionelectrical resistivitymetal-insulator transitionthin filmstitanium compounds

KW - Electrical resistivity

KW - Thin Films

KW - METIS-297761

KW - metal-insulator transition

KW - IR-86965

KW - Atomic Layer Deposition

KW - titanium compounds

U2 - 10.1063/1.4817007

DO - 10.1063/1.4817007

M3 - Article

VL - 103

SP - 051904

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 5

ER -