Conduction and electric field effect in ultra-thin TiN films

B. Van Hao, Alexeij Y. Kovalgin, Jurriaan Schmitz, Robertus A.M. Wolters

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    Using low pressure atomic layer deposition, ultra-thin continuous TiN films were prepared. The temperature coefficient of resistance (TCR), resistivity and field effect properties of these films were investigated. With decreasing film thickness, a positive-to-negative transition of TCR and a steep increase of resistivity were observed. This is attributed to the metal-semimetal transition of the TiN films. We demonstrate appreciable field-induced current modulation up to 11% in a 0.65 nm TiN film. The field effect is remarkably independent of temperature. A polarity asymmetry of the current-voltage characteristics is found, attributed to the interplay between different types of the carriers.
    Original languageUndefined
    Pages (from-to)051904
    Number of pages4
    JournalApplied physics letters
    Issue number5
    Publication statusPublished - 31 Jul 2013


    • EWI-23557
    • atomic layer depositionelectrical resistivitymetal-insulator transitionthin filmstitanium compounds
    • Electrical resistivity
    • Thin Films
    • METIS-297761
    • metal-insulator transition
    • IR-86965
    • Atomic Layer Deposition
    • titanium compounds

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