Abstract
Using low pressure atomic layer deposition, ultra-thin continuous TiN films were prepared. The temperature coefficient of resistance (TCR), resistivity and field effect properties of these films were investigated. With decreasing film thickness, a positive-to-negative transition of TCR and a steep increase of resistivity were observed. This is attributed to the metal-semimetal transition of the TiN films. We demonstrate appreciable field-induced current modulation up to 11% in a 0.65 nm TiN film. The field effect is remarkably independent of temperature. A polarity asymmetry of the current-voltage characteristics is found, attributed to the interplay between different types of the carriers.
Original language | Undefined |
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Pages (from-to) | 051904 |
Number of pages | 4 |
Journal | Applied physics letters |
Volume | 103 |
Issue number | 5 |
DOIs | |
Publication status | Published - 31 Jul 2013 |
Keywords
- EWI-23557
- atomic layer depositionelectrical resistivitymetal-insulator transitionthin filmstitanium compounds
- Electrical resistivity
- Thin Films
- METIS-297761
- metal-insulator transition
- IR-86965
- Atomic Layer Deposition
- titanium compounds