Conduction and electric field effect in ultra-thin TiN films

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    Abstract

    Using low pressure atomic layer deposition, ultra-thin continuous TiN films were prepared. The temperature coefficient of resistance (TCR), resistivity and field effect properties of these films were investigated. With decreasing film thickness, a positive-to-negative transition of TCR and a steep increase of resistivity were observed. This is attributed to the metal-semimetal transition of the TiN films. We demonstrate appreciable field-induced current modulation up to 11% in a 0.65 nm TiN film. The field effect is remarkably independent of temperature. A polarity asymmetry of the current-voltage characteristics is found, attributed to the interplay between different types of the carriers.
    Original languageUndefined
    Pages (from-to)051904
    Number of pages4
    JournalApplied physics letters
    Volume103
    Issue number5
    DOIs
    Publication statusPublished - 31 Jul 2013

    Keywords

    • EWI-23557
    • atomic layer depositionelectrical resistivitymetal-insulator transitionthin filmstitanium compounds
    • Electrical resistivity
    • Thin Films
    • METIS-297761
    • metal-insulator transition
    • IR-86965
    • Atomic Layer Deposition
    • titanium compounds

    Cite this

    @article{e30d958c03aa45dca87b37865db9a831,
    title = "Conduction and electric field effect in ultra-thin TiN films",
    abstract = "Using low pressure atomic layer deposition, ultra-thin continuous TiN films were prepared. The temperature coefficient of resistance (TCR), resistivity and field effect properties of these films were investigated. With decreasing film thickness, a positive-to-negative transition of TCR and a steep increase of resistivity were observed. This is attributed to the metal-semimetal transition of the TiN films. We demonstrate appreciable field-induced current modulation up to 11{\%} in a 0.65 nm TiN film. The field effect is remarkably independent of temperature. A polarity asymmetry of the current-voltage characteristics is found, attributed to the interplay between different types of the carriers.",
    keywords = "EWI-23557, atomic layer depositionelectrical resistivitymetal-insulator transitionthin filmstitanium compounds, Electrical resistivity, Thin Films, METIS-297761, metal-insulator transition, IR-86965, Atomic Layer Deposition, titanium compounds",
    author = "{Van Hao}, B. and Kovalgin, {Alexeij Y.} and Jurriaan Schmitz and Wolters, {Robertus A.M.}",
    note = "eemcs-eprint-23557",
    year = "2013",
    month = "7",
    day = "31",
    doi = "10.1063/1.4817007",
    language = "Undefined",
    volume = "103",
    pages = "051904",
    journal = "Applied physics letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics",
    number = "5",

    }

    Conduction and electric field effect in ultra-thin TiN films. / Van Hao, B.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan; Wolters, Robertus A.M.

    In: Applied physics letters, Vol. 103, No. 5, 31.07.2013, p. 051904.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Conduction and electric field effect in ultra-thin TiN films

    AU - Van Hao, B.

    AU - Kovalgin, Alexeij Y.

    AU - Schmitz, Jurriaan

    AU - Wolters, Robertus A.M.

    N1 - eemcs-eprint-23557

    PY - 2013/7/31

    Y1 - 2013/7/31

    N2 - Using low pressure atomic layer deposition, ultra-thin continuous TiN films were prepared. The temperature coefficient of resistance (TCR), resistivity and field effect properties of these films were investigated. With decreasing film thickness, a positive-to-negative transition of TCR and a steep increase of resistivity were observed. This is attributed to the metal-semimetal transition of the TiN films. We demonstrate appreciable field-induced current modulation up to 11% in a 0.65 nm TiN film. The field effect is remarkably independent of temperature. A polarity asymmetry of the current-voltage characteristics is found, attributed to the interplay between different types of the carriers.

    AB - Using low pressure atomic layer deposition, ultra-thin continuous TiN films were prepared. The temperature coefficient of resistance (TCR), resistivity and field effect properties of these films were investigated. With decreasing film thickness, a positive-to-negative transition of TCR and a steep increase of resistivity were observed. This is attributed to the metal-semimetal transition of the TiN films. We demonstrate appreciable field-induced current modulation up to 11% in a 0.65 nm TiN film. The field effect is remarkably independent of temperature. A polarity asymmetry of the current-voltage characteristics is found, attributed to the interplay between different types of the carriers.

    KW - EWI-23557

    KW - atomic layer depositionelectrical resistivitymetal-insulator transitionthin filmstitanium compounds

    KW - Electrical resistivity

    KW - Thin Films

    KW - METIS-297761

    KW - metal-insulator transition

    KW - IR-86965

    KW - Atomic Layer Deposition

    KW - titanium compounds

    U2 - 10.1063/1.4817007

    DO - 10.1063/1.4817007

    M3 - Article

    VL - 103

    SP - 051904

    JO - Applied physics letters

    JF - Applied physics letters

    SN - 0003-6951

    IS - 5

    ER -