Conduction and electric field effect in ultra-thin tungsten films

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Ultra-thin tungsten films were prepared using hotwire assisted atomic layer deposition. The film thickness ranged from 2.5 to 10 nm, as determined by spectroscopic ellipsometry and verified by scanning electron microscopy. The films were implemented in conventional Van der Pauw and circular transmission line method (CTLM) test structures, to explore the effect of film thickness on the sheet and contact resistance, temperature coefficient of resistance (TCR), and external electric field applied. All films exhibited linear current-voltage characteristics. The sheet resistance was shown to considerably vary across the wafer, due to the film thickness non-uniformity. The TCR values changed from positive to negative with decreasing the film thickness. A field-induced modulation of the sheet resistance up to 4.6∙10-4 V-1 was obtained for a 2.5 nm thick film, larger than that generally observed for metals.

Original languageEnglish
Article number9016070
Pages (from-to)202-209
Number of pages8
JournalIEEE Transactions on Semiconductor Manufacturing
Issue number2
Early online date27 Feb 2020
Publication statusPublished - May 2020


  • Adaptive optics
  • atomic layer deposition
  • contact resistance
  • Electrodes
  • field effect.
  • hot-wire
  • Optical refraction
  • Optical variables control
  • Resistance
  • scanning electron microscopy
  • sheet resistance
  • Silicon
  • spectroscopic ellipsometry
  • temperature coefficient of resistance
  • Thin films
  • transfer length
  • Tungsten
  • tungsten
  • X-ray diffraction


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