@inproceedings{3d03b9bc3eea43d18ebe4fc3f06b65b7,
title = "Considerations on using SU-8 as a construction material for high aspect ratio structures",
abstract = "This paper discusses two material aspects of SU-8 that have up till now been insufficiently documented. We present initial results on the outgassing behavior and a study on the dielectric properties of SU-8 at high bias voltage. The dielectric strength is determined to be at least 2 MV/cm. These elements are investigated in the light of plans to manufacture an SU-8 based Micro-Channel Plate (MCP). Although the outgassing properties and dielectric strength are favorable the patterning capabilities are expected to limit the use of such an MCP. Index Terms—CMOS compatibility, SU-8, wafer-scale post-processing, outgassing, dielectric strength",
keywords = "SC-RID: Radiation Imaging detectors, outgassing, dielectric strength, EWI-11740, METIS-245947, IR-64581, CMOS compatibility, SU-8, wafer-scale post-processing",
author = "J. Melai and Cora Salm and Smits, {Sander M.} and {Blanco Carballo}, V.M. and Jurriaan Schmitz and Ben Hageluken",
year = "2007",
month = nov,
day = "29",
language = "Undefined",
isbn = "978-90-73461-49-9",
publisher = "STW",
number = "7",
pages = "529--534",
booktitle = "10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)",
note = "10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007 ; Conference date: 29-11-2007 Through 30-11-2007",
}