Considerations on using SU-8 as a construction material for high aspect ratio structures

J. Melai, Cora Salm, Sander M. Smits, V.M. Blanco Carballo, Jurriaan Schmitz, Ben Hageluken

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    Abstract

    This paper discusses two material aspects of SU-8 that have up till now been insufficiently documented. We present initial results on the outgassing behavior and a study on the dielectric properties of SU-8 at high bias voltage. The dielectric strength is determined to be at least 2 MV/cm. These elements are investigated in the light of plans to manufacture an SU-8 based Micro-Channel Plate (MCP). Although the outgassing properties and dielectric strength are favorable the patterning capabilities are expected to limit the use of such an MCP. Index Terms—CMOS compatibility, SU-8, wafer-scale post-processing, outgassing, dielectric strength
    Original languageUndefined
    Title of host publication10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages529-534
    Number of pages6
    ISBN (Print)978-90-73461-49-9
    Publication statusPublished - 29 Nov 2007
    Event10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007 - Veldhoven, Netherlands
    Duration: 29 Nov 200730 Nov 2007

    Publication series

    Name
    PublisherTechnology Foundation STW
    Number7

    Workshop

    Workshop10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007
    CountryNetherlands
    CityVeldhoven
    Period29/11/0730/11/07

    Keywords

    • SC-RID: Radiation Imaging detectors
    • outgassing
    • dielectric strength
    • EWI-11740
    • METIS-245947
    • IR-64581
    • CMOS compatibility
    • SU-8
    • wafer-scale post-processing

    Cite this

    Melai, J., Salm, C., Smits, S. M., Blanco Carballo, V. M., Schmitz, J., & Hageluken, B. (2007). Considerations on using SU-8 as a construction material for high aspect ratio structures. In 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE) (pp. 529-534). Utrecht, The Netherlands: STW.