Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness

J.S. Kolhatkar; Cora Salm; M.J. Knitel; Hans Wallinga

doi:10.1109/ESSDERC.2002.194876

Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness

J.S. Kolhatkar, Cora Salm, M.J. Knitel, Hans Wallinga

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

9 Citations (Scopus)

42 Downloads (Pure)

Abstract

The low-frequency noise power spectral density of MOSFETs is decreased if the MOSFETs are periodically switched "off" (switched bias conditions). The influence of the gate oxide thickness on fixed bias and switched biased low frequency drain current noise spectral density of PMOS devices has been experimentally investigated. Under constant bias conditions, it is observed that the current noise spectral density increases linearly with increase in the gate oxide thickness. The larger the measured low-frequency noise under constant bias, the larger is the noise reduction after periodically switching the P-MOSFETs off.

Original language	Undefined
Title of host publication	Proceedings of the 32nd European Solid-State Device Research Conference
Editors	A. Kovalguine
Place of Publication	Piscataway
Publisher	IEEE Computer Society
Pages	83-86
Number of pages	4
ISBN (Print)	88-900847-8-2
DOIs	https://doi.org/10.1109/ESSDERC.2002.194876
Publication status	Published - 17 Oct 2005
Event	32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy Duration: 24 Sep 2002 → 26 Sep 2002 Conference number: 32

Publication series

Name
Publisher	IEEE

Conference

Conference	32nd European Solid-State Device Research Conference, ESSDERC 2002
Abbreviated title	ESSDERC
Country	Italy
City	Firenze
Period	24/09/02 → 26/09/02

Keywords

EWI-15590
IR-43391
METIS-206489

Access to Document

10.1109/ESSDERC.2002.194876

kolhatkar_essderc
open

Cite this

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title = "Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness",

abstract = "The low-frequency noise power spectral density of MOSFETs is decreased if the MOSFETs are periodically switched {"}off{"} (switched bias conditions). The influence of the gate oxide thickness on fixed bias and switched biased low frequency drain current noise spectral density of PMOS devices has been experimentally investigated. Under constant bias conditions, it is observed that the current noise spectral density increases linearly with increase in the gate oxide thickness. The larger the measured low-frequency noise under constant bias, the larger is the noise reduction after periodically switching the P-MOSFETs off.",

keywords = "EWI-15590, IR-43391, METIS-206489",

author = "J.S. Kolhatkar and Cora Salm and M.J. Knitel and Hans Wallinga",

year = "2005",

month = oct,

day = "17",

doi = "10.1109/ESSDERC.2002.194876",

language = "Undefined",

isbn = "88-900847-8-2",

publisher = "IEEE Computer Society",

pages = "83--86",

editor = "A. Kovalguine",

booktitle = "Proceedings of the 32nd European Solid-State Device Research Conference",

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note = "null ; Conference date: 24-09-2002 Through 26-09-2002",

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Kolhatkar, JS, Salm, C, Knitel, MJ & Wallinga, H 2005, Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness. in A Kovalguine (ed.), Proceedings of the 32nd European Solid-State Device Research Conference. IEEE Computer Society, Piscataway, pp. 83-86, 32nd European Solid-State Device Research Conference, ESSDERC 2002, Firenze, Italy, 24/09/02. https://doi.org/10.1109/ESSDERC.2002.194876

Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness. / Kolhatkar, J.S.; Salm, Cora; Knitel, M.J.; Wallinga, Hans.

Proceedings of the 32nd European Solid-State Device Research Conference. ed. / A. Kovalguine. Piscataway : IEEE Computer Society, 2005. p. 83-86.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness

AU - Kolhatkar, J.S.

AU - Salm, Cora

AU - Knitel, M.J.

AU - Wallinga, Hans

N1 - Conference code: 32

PY - 2005/10/17

Y1 - 2005/10/17

N2 - The low-frequency noise power spectral density of MOSFETs is decreased if the MOSFETs are periodically switched "off" (switched bias conditions). The influence of the gate oxide thickness on fixed bias and switched biased low frequency drain current noise spectral density of PMOS devices has been experimentally investigated. Under constant bias conditions, it is observed that the current noise spectral density increases linearly with increase in the gate oxide thickness. The larger the measured low-frequency noise under constant bias, the larger is the noise reduction after periodically switching the P-MOSFETs off.

AB - The low-frequency noise power spectral density of MOSFETs is decreased if the MOSFETs are periodically switched "off" (switched bias conditions). The influence of the gate oxide thickness on fixed bias and switched biased low frequency drain current noise spectral density of PMOS devices has been experimentally investigated. Under constant bias conditions, it is observed that the current noise spectral density increases linearly with increase in the gate oxide thickness. The larger the measured low-frequency noise under constant bias, the larger is the noise reduction after periodically switching the P-MOSFETs off.

KW - EWI-15590

KW - IR-43391

KW - METIS-206489

U2 - 10.1109/ESSDERC.2002.194876

DO - 10.1109/ESSDERC.2002.194876

M3 - Conference contribution

SN - 88-900847-8-2

SP - 83

EP - 86

BT - Proceedings of the 32nd European Solid-State Device Research Conference

A2 - Kovalguine, A.

PB - IEEE Computer Society

CY - Piscataway

Y2 - 24 September 2002 through 26 September 2002

ER -