Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness

J.S. Kolhatkar; Cora Salm; M.J. Knitel; Hans Wallinga

doi:10.1109/ESSDERC.2002.194876

Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness

J.S. Kolhatkar, Cora Salm, M.J. Knitel, Hans Wallinga

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

8 Citations (Scopus)

40 Downloads (Pure)

Abstract

The low-frequency noise power spectral density of MOSFETs is decreased if the MOSFETs are periodically switched "off" (switched bias conditions). The influence of the gate oxide thickness on fixed bias and switched biased low frequency drain current noise spectral density of PMOS devices has been experimentally investigated. Under constant bias conditions, it is observed that the current noise spectral density increases linearly with increase in the gate oxide thickness. The larger the measured low-frequency noise under constant bias, the larger is the noise reduction after periodically switching the P-MOSFETs off.

Original language	Undefined
Title of host publication	Proceedings of the 32nd European Solid-State Device Research Conference
Editors	A. Kovalguine
Place of Publication	Piscataway
Publisher	IEEE Computer Society
Pages	83-86
Number of pages	4
ISBN (Print)	88-900847-8-2
DOIs	https://doi.org/10.1109/ESSDERC.2002.194876
Publication status	Published - 17 Oct 2005
Event	32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy Duration: 24 Sep 2002 → 26 Sep 2002 Conference number: 32

Publication series

Name
Publisher	IEEE

Conference

Conference	32nd European Solid-State Device Research Conference, ESSDERC 2002
Abbreviated title	ESSDERC
Country	Italy
City	Firenze
Period	24/09/02 → 26/09/02

Keywords

EWI-15590
IR-43391
METIS-206489

Access to Document

10.1109/ESSDERC.2002.194876

kolhatkar_essderc
open

Cite this

Kolhatkar, J. S., Salm, C., Knitel, M. J., & Wallinga, H. (2005). Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness. In A. Kovalguine (Ed.), Proceedings of the 32nd European Solid-State Device Research Conference (pp. 83-86). Piscataway: IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2002.194876

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title = "Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness",

abstract = "The low-frequency noise power spectral density of MOSFETs is decreased if the MOSFETs are periodically switched {"}off{"} (switched bias conditions). The influence of the gate oxide thickness on fixed bias and switched biased low frequency drain current noise spectral density of PMOS devices has been experimentally investigated. Under constant bias conditions, it is observed that the current noise spectral density increases linearly with increase in the gate oxide thickness. The larger the measured low-frequency noise under constant bias, the larger is the noise reduction after periodically switching the P-MOSFETs off.",

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doi = "10.1109/ESSDERC.2002.194876",

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Kolhatkar, JS, Salm, C, Knitel, MJ & Wallinga, H 2005, Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness. in A Kovalguine (ed.), Proceedings of the 32nd European Solid-State Device Research Conference. IEEE Computer Society, Piscataway, pp. 83-86, 32nd European Solid-State Device Research Conference, ESSDERC 2002, Firenze, Italy, 24/09/02. https://doi.org/10.1109/ESSDERC.2002.194876

Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness. / Kolhatkar, J.S.; Salm, Cora; Knitel, M.J.; Wallinga, Hans.

Proceedings of the 32nd European Solid-State Device Research Conference. ed. / A. Kovalguine. Piscataway : IEEE Computer Society, 2005. p. 83-86.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Salm, Cora

AU - Knitel, M.J.

AU - Wallinga, Hans

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N2 - The low-frequency noise power spectral density of MOSFETs is decreased if the MOSFETs are periodically switched "off" (switched bias conditions). The influence of the gate oxide thickness on fixed bias and switched biased low frequency drain current noise spectral density of PMOS devices has been experimentally investigated. Under constant bias conditions, it is observed that the current noise spectral density increases linearly with increase in the gate oxide thickness. The larger the measured low-frequency noise under constant bias, the larger is the noise reduction after periodically switching the P-MOSFETs off.

AB - The low-frequency noise power spectral density of MOSFETs is decreased if the MOSFETs are periodically switched "off" (switched bias conditions). The influence of the gate oxide thickness on fixed bias and switched biased low frequency drain current noise spectral density of PMOS devices has been experimentally investigated. Under constant bias conditions, it is observed that the current noise spectral density increases linearly with increase in the gate oxide thickness. The larger the measured low-frequency noise under constant bias, the larger is the noise reduction after periodically switching the P-MOSFETs off.

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BT - Proceedings of the 32nd European Solid-State Device Research Conference

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