Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness

J.S. Kolhatkar, Cora Salm, M.J. Knitel, Hans Wallinga

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    8 Citations (Scopus)
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    Abstract

    The low-frequency noise power spectral density of MOSFETs is decreased if the MOSFETs are periodically switched "off" (switched bias conditions). The influence of the gate oxide thickness on fixed bias and switched biased low frequency drain current noise spectral density of PMOS devices has been experimentally investigated. Under constant bias conditions, it is observed that the current noise spectral density increases linearly with increase in the gate oxide thickness. The larger the measured low-frequency noise under constant bias, the larger is the noise reduction after periodically switching the P-MOSFETs off.
    Original languageUndefined
    Title of host publicationProceedings of the 32nd European Solid-State Device Research Conference
    EditorsA. Kovalguine
    Place of PublicationPiscataway
    PublisherIEEE Computer Society
    Pages83-86
    Number of pages4
    ISBN (Print)88-900847-8-2
    DOIs
    Publication statusPublished - 17 Oct 2005
    Event32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy
    Duration: 24 Sep 200226 Sep 2002
    Conference number: 32

    Publication series

    Name
    PublisherIEEE

    Conference

    Conference32nd European Solid-State Device Research Conference, ESSDERC 2002
    Abbreviated titleESSDERC
    CountryItaly
    CityFirenze
    Period24/09/0226/09/02

    Keywords

    • EWI-15590
    • IR-43391
    • METIS-206489

    Cite this

    Kolhatkar, J. S., Salm, C., Knitel, M. J., & Wallinga, H. (2005). Constant and switched bias low frequency noise in p-MOSFETs with varying gate oxide thickness. In A. Kovalguine (Ed.), Proceedings of the 32nd European Solid-State Device Research Conference (pp. 83-86). Piscataway: IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2002.194876